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69 views23 pages

PB Assignment Half

Uploaded by

UshaRaniDash
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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IG) What % tHe eee eh eed aa thet contribution in a eee fi A In ideal MOS Cofncifor tere is vO By 8g "Gop 9 Gun ard Lhaks why its Vp (Flat Sond) valbge is = 0. By > Fined Oxile charge. By > Intebace Lroffed charge Sat => Oxide. beafffed charge. Ou => Mobile ienie charge. / Bat in case ot non — ideal a MOS Cafacttor Sem awbace + S the loan bs nat zeo im this case, Ft bond voll &, we Frave- te elkinate © the — aharg G a wad. Hen ly ff a wcrdhin pmneunt of vellege- acows the MoaseaP and) ben He browds ye Bladen. So, the blot Band, vellege bhidted fo the wegedline aide values. the the bhe Prother chbect is seen which 2 Rnwen a3 contact faterdil bet awd if hes come. be wok dunctton didbercenee bebrccen the wetalt semicorduchar { Dus) « When the wert mete and Semicon ducer substeeote hb scferoted Si 7 nol fetved Fegether , the band Ragptom és ke — Si [fol Nos, tf we fet jae MOS then -the- famd fiagsom be 9 The dblerence. tefecen the Ferm! —lerel, Andicates the. emeunt oh “ofpied volfege tecaue vurder cqillebrivon the fesmi-Jevely ore dined. Veg * Pus = bua-$s fgokm , Veg =7 Se 2) O Weg = rms ~ : But sin care ob eal MOS Cola ccter , the Veg=o ty HL + Veg + Wo So, af Elat Bond voltage changes , the Threshold Voltage changes . 1G) Fuk eat the cnttlen! cafactfanee onl values om the C-V ¢ aosing rare Le ob Vig = IV. Giten thet the MOS cofacitor fos oom alluninium , for cishich gm aady, am Oxide thickwess ‘of tox = 0-3ju0 an doling tov | ch Ng = 1-45 x10 "6 cem7 3. | Bes; Cen ‘eh IV Vv mn PEW, toy = O'R wm Ne = 45 x10 em? J X Ve y Vy 1 Rea a, = Yen $ ———— + pe ee a 2 -98V . me fe - adn ( ” nS) 072 y, Cx ~ IPP rFlem™ -. 1 = Veg 18-98 fos opm - fe =e 4] - (4°05 20-554 > Neg 7 2-28. se e — O86V. | 1. Oy F298 - 0:86 =2:12V Oy = QWIAXIP-F M107 = 2:75 x10 ® C Jen 3-99K10° Sy . 1 No. of dixch charges , = oa exe uy 2 2634 x10 [om 2 [i — (-2:98) alap®xio lf ~I1e 16x10? x lL ASX lo le 207 a: @) flrs - for am ‘deal Mos coacitar dexive the relotion fefween veltage bes acxass the semiconducto~ (¥,) Pheronal (Yen) » Subrbeate Lefling concentrabion (0) be cen vovcorbrden (%4). Tn core of wersion mode , the MOS Coflaccter a ns =f ) when aurchace. per cleehion hecomes same of the bith mafar Babe by Prlfemamm relation , we get — Boe (3) “nth - t+ (As) * avy (4) @ but a ah, imetion ashe cell (at T=20%) thsi fallaute r a cage Grol’ em™>, Ng = Jo!® em ay Dy 225 a el A ‘0 em S!. hh, TSK? S , G = may Cm s7 y Pe ; Phafoewecent density J 7 Sm pew, I-1-tp %, a BE _ ) da fem cient Case. — Ve Me E20 Neer 0-5-5 (c - 1) > dey =f (c Vee Ay -1) Nee hy, =) Tf, -_ | "Nee Tea) Vpn 3) Tg- Jsf 9 a = e) Der Dent We bn Ne Lp " }-G02 X10 pj aoe te dt rae = ie ae ie] G6 MOM Sxi0'! wh by ® ‘ 2 0-025 ~ le NN oe Vee O08 we tn( a) 2 0683 V x ” © 3@) Disuss He my friseifle ot LMPATT Diode & shes that — % zltiez $ ar al Aesi- “DC MPATT? reams infact lnizabion & Pralomeh framsit dime . AT | i we EMPTT Dirdes Tt fos pf ent in the terminal edges ard fas fwwo tages vamed etter fo-iior va, thot mens = ove defed oon reglin and omethen et bj rae gfe ee This tnbringic. La bs & the ome ela due fromatl of herge casoues From ove Aide do anether , and anetherr scegton dor tine dele & the avollecle mublilication. When the did és servesue biased , te urhele inbrérsic oegion gh dcpleted and due fo the nererse Leasing. fhe, le delays fee delay Sehucen vellgen wd ow oe predate gorcedes sexe te (Mecxorcane fever) cre A RF application I Tia Ty Stole Cuscrent fusee The Nw, frst time of the holes 6 Te A L.t \ 4 Put, dn neal Nirdle often avalanche fine delay is wal T/y, other ess Bhan cbhad. ‘. To emsre the aucecssfol operation , oe when avalanche ay < ley pawyit time. delay is Sreht Vs & ade -fg tt 2% ie ar Qu 3.6) aE ee Lep, debine the teres (i) dnfesual and (Ci) Peemel “Loss, 7 Oo bel, Des lhe fan Direct brood, pemicen ductors axe used fo lesign LEDS» Ex Leps (ti Exiting Dede) the veel emesgg. £8 CM ide ede) A tical LED 45 forucard biased , When) the ie covduction Gand electors ball info awlevee Lord ocleasiv energy uth the trequency of visi! scomge fbcten conve, Now, Re % ref, >) Ro = ane fr, a Qe [2 thermal opie News ablen fuyig external buiag — . Gr G, = zonf 2H + Sn) OA tsp) oan b(t fe #5%) Sn = Q, b(n, rh Fe) ae G; ox (noth 8x) Sm 7 fer | " : 7 - J 7. eet ica ot (% +f, re) > Excess ecarviic, steermbina tion Time, New, there ix two tyfes A recombinations, Sadiclire Resttration:— Recombicetion of fin cand babes, Colige. goreration of ecralitne Reatrabins~ Chala oo oles rceombine vatthout crralion fPrbete F, ITF Fy Ia &()Tndereral Guankum Eldieioveg. '- yo ee ee i fe Tet Recombinaliows / See. Ve, Vag 2 v sie (federal Buarbon Eibebrey'- Lt is defined as the duaclion of goroated fhctors thet are ochiedly emtlled decom the rsemleorvluctr. (8) Breach boas: > w i ve Treidex—> | ——> Redlectel <— Demmittal Reflection en — (+ ae) fist wnat ae Fo ee some food 45 r»leckeA “hock ene a gemicorductsic. This ebbect is 4@) Discuss he ee fell oe bis g Might Bos Ai - i can resbre the fuchlon esr. Tr wederxn fey Peaonsistors va need & fore fighe spelion 2 a co Ne Tye + Tne Mp We Jove Io oreduce the emitter, ervvcernt Iiccause yninertly eovotiene dc. Peles sreeomling dronsfo! factor, Encrecasing, whe dein with bol b incense the tn feetion efaicingy, Trereosing emillerr dopPring will Berease aoa (tah econ and Po Less dy ms SMlo em ) dx = Oaym , Coat =10-9 Fea? fr = ODRY. 3 far Vin * Yee +Vset On +1 [g, Me rem Ee Ne, = ¥( fa TH (Fi) + Yee ye QKVG Ko? 1095 io! Kio 2 Aon ee tae 2 \7-9 Kio7 2 Z 2 0385 /V / SANE = 039A [O72 45 [ane 15 2 5594 ( srexease x Vas!) (vs) Phe tetal steady —atate Hide. vo get Bt Ste 3. -eawtealad ele = e(wilet ly, Ayi- Ten cote A Ghermal enilliberine a oF e (Hare 4h) When eccess Crrodens 7 e- poucrated tee ib @ oc Paoli) eon ei] com rahe Bs) - Ao 2 (Sf) (“ 4) Mu, Je Erg (tae T-we (r, 2g A x 40 Ab 2 COI (ny “e ~-DO re L Fu = AE T= ea ( Err ah) ae Nosy in ere A oa _ To eft de ° eG,W we The exces ea Casvuen continuity. eypatin fp, POW +4, - me - 2p ot = Ts, a fe OE Ds 175%) SYfk_ 2 hee ‘ "pk = fe Phen & be? y =e SY bn” Dn = . OM Sy 2 fee ¢ OTe fn syed “y ay 2 AT, (4% Je Alen Sh Gy 5 lay fe ve : To 2 €Dy rod es ny X20 2 Dr £)% m,-(4.%, we 4 Ja, eGy bn SPR dp ze © Oy lp r EG, Wr ealy FEG Ly, e(W Fla thy) 3-(¢) Discuss * Drain Trdueed Bevorier Lowering © a shoot gorey MOSFET= . foi- el st he] Vig 22 D Vox yo There is A bareder Lefween the dibbusion, and the chanel xegion eqpol +n the builf- in zero ties fonction foterdal tetveen the. Abhustons and the butk sili, When a esifive Voc 65 offlleh , te snmidiahe. r76 of the doeain 4 ottected , and the Chaunel fal fredile As basically unotbected » Mes covsidest A shet channel denice , The above dere iy Fox feng chowvel \Mosfer. Put Fox short channel MOSFET — S D S D . Decoin Lins nevs changes the [rterbal footie the entine charmel , lower, De. boroden at the tourxce bulk fovction Shis ts oedeuced 4 oy deain brdiced bwcier Arocring , or DIBL. . . > ! Via? Veg h, } +.) a Since = Cwevieny wre able fo Peverse. Heo chome to. fosrer than ex ehed gue biases, ~DIBL ds vowel deluded ay a modibication te the Hheesheld vellege cxfocersion , as uf serves G) decrease the threshold voltage. 6) Disewss Phe ardgin of negative momic. seoiatance ee in Tornel ste wth sallebbe fect Lingran. fs.

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