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Physics of VLSI Devices (MVLD501L)

1. (a) At room temperature (300 K) the effective density of states in the valence band is 2.66 x
1019 cm-3 for silicon and 7 x 1015 cm-3 for gallium arsenide. Find the corresponding effective
masses of holes. Compare these masses with the free-electron mass. (b) silicon sample at T =
300 K contains an acceptor impurity concentration of NA = 1016 cm-3. Determine the
concentration of donor impurity atoms that must be added so that the silicon is n-type and
the Fermi energy is 0.20 eV below the conduction band edge.
2. (a) Draw a simple flat energy band diagram for silicon doped with 1016 arsenic atoms/cm3 at
77 K, 300 K, and 600 K. Show the Fermi level and use the intrinsic Fermi level as the energy
reference. (b) Determine the total number of energy states in GaAs between EV and EV - kT
at T = 300 K.
3. (a) Plot the density of states in the conduction band for silicon over the range EC ≤ E ≤ EC +
0.2 eV. (6) Repeat (a) for the density of states in the valence band over the range E V - 02eV ≤
E ≤ EV.
4. Calculate values for the Fermi function/(C) at 300 K and plot vs. energy in eV. Choose EF = 1
eV and make the calculated points closer together near the Fermi level to obtain a smooth
curve. Notice that f(E) varies quite rapidly within a few kT of EF. Show that the probability
that a state ΔE above EF is occupied is the same as the probability that the state ΔE below EF
is empty.
5. (a) Determine the probability that an energy level is occupied by an electron if the state is
above the Fermi level by (i) kT. (ii) 5kT, and (iii) 10kT.
(b) Determine the probability that an energy level is empty of an electron if the state is
below the Fermi level by (i) kT, (ii) 5kT. and (iii) l0kT.
6. The Fermi energy in silicon is 0.25 eV below the conduction band energy EC. (a) Plot the
probability of a state being occupied by an electron over the range EC ≤ E ≤ EC + 2kT. Assume
T = 300 K. (b) Repeat part (a) for T = 400 K.
7. (a) Determine the probability of occupancy of a state that is located at 0.259eV above EF at:
i) Τ = OK ii) Τ = 300K iii) Τ = 600K
(b) Determine the probability of vacancy of a state that is located at 0.4eV below E F at T=
300K.
(c) Repeat part (b) if the state is at 0.01 eV above EF at T = 300K.
8. The Fermi energy level for a particular material at T = 300 K is 6.25 eV. The electrons
in this material follow the Fermi-Dirac distribution function. (a) Find the probability of an
energy level at 6.50 eV being occupied by an electron. (6) Repeat (a) if the temperature is
increased to T = 950 K. (Assume that EF is a constant.) (c) Calculate the temperature at which
there is a 1 percent probability that a state 0.30 eV below the Fermi level will be empty of an
electron.
9. The Fermi energy for copper at T = 300 K is 7.0 eV. The electrons in copper follow
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the Femi-Dirac distribution function. (a) Find the probability of an energy level at
7.15 eV being occupied by an electron. (6) Repeat part (a) for T = 1000 K. (Assume
that EF is a constant.) (c) Repeat part (a) for E = 6.85 eV and T = 300 K. (d) Determine
the probability of the energy state at E = EF being occupied at T = 300 K and at T = 1000 K.

10. Calculate the intrinsic carrier concentration. ni. at T = 200, 400, and 600 K for (a) silicon, (b)
germanium, and (r) gallium arsenide.
11. Two semiconductor materials have exactly the same properties except that material A has a
bandgap energy of 1.0 eV and material B has a bandgap energy of 1.2 eV. Determine the
ratio of ni, of material A to that of material B for T = 300 K.
12. Determine the values of n, and p, for silicon at T = 300 K if the Fermi energy is 0.22 eV above
the valence band energy.
13. (a) If EC – EF = 0.25 eV in gallium arsenide at T = 400 K. calculate the values of n and p. (b)
Assuming the value of n from part (a) remains constant, determine E, - EF and p, at T = 300 K.
14. For the Boltzmann approximation to be valid for a semiconductor, the Fermi level
must be at least 3kT below the donor level in an n-type material and at least 3kT above
the acceptor level in a p-type material. If T = 300 K, determine the maximum electron
concentration in an n-type semiconductor and the maximum hole concentration in a p-type
semiconductor for the Boltzmann approximation to be valid in (a) silicon and (b) gallium
arsenide.
15. Consider a germanium semiconductor at T = 300 K. Calculate the thermal equilibrium
concentrations of n and p for (a) Na = 1013 c m-3. Nd = 0, and (b) Nd = 5 x 1015 cm-3, Na = 0.
16. The Fermi level in n-type silicon at T = 300 K is 245 meV below the conduction
band and 200 meV below the donor level. Determine the probability of finding an
electron (a) in the donor level and (b) in a state in the conduction band kT above the
conduction band edge.
17. Determine the equilibrium electron and hole concentrations in silicon for the following
conditions:
(a) T = 300 K, Nd=2x 1015 cm-3, Na = 0
(b) T = 300 K. Nd = 0. Na = 1016 cm-3
(c) T = 300 K. Nd = Na = 1015 cm-3
(d) T = 400 K. Nd = 0. Na = 1014 cm-3
(e) T = 500 K. Nd = 1014 cm-3. Na = 0
18. Determine the equilibrium electron and hole concentrations in GaAs for the following
conditions:
(a) T = 300 K, Nd=2x 1015 cm-3, Na = 0
(b) T = 300 K. Nd = 0. Na = 1016 cm-3
(c) T = 300 K. Nd = Na = 1015 cm-3
(d) T = 400 K. Nd = 0. Na = 1014 cm-3
(e) T = 500 K. Nd = 1014 cm-3. Na = 0
19. Assume that silicon. germanium, and gallium arsenide each have dopant concentrations
of Nd = I x 1013 cm-3 and Na = 2.5 x 1013 cm-3 at T = 300 K. For each of the three materials (a) Is
this material n type or p type? (b) Calculate n, and p.
20. A sample of silicon at T = 450 K is doped with boron at a concentration of 1.5 x 1015 cm-3 and
with arsenic at a concentration of 8 x 1014 cm-3. (a) Is the material n or p type? (b) Determine
the electron and hole concentrations. (c) Calculate the total ionized impurity concentration.
21. A GaAs device is doped with a donor concentration of 3 x 10 15 cm-3. For the device to
operate properly, the intrinsic carrier concentration must remain less than 5 percent of the
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total electron concentration. What is the maximum temperature that the device may
operate?
22. Silicon at T = 300 K is doped with acceptor atoms at a concentration of Na = 7 x 1015 cm-3. (a)
Determine EF – EV. (h) Calculate the concentration of additional acceptor atoms that must be
added to move the Fermi level a distance kT closer to the valence-band edge.
23. a) Determine the conductivity of intrinsic silicon at 300K.
b) Repeat part (a) for a sample of silicon doped with 1017cm-3 of phosphorus.
24. Assume that a conduction electron in Si (µ„ = 1350 cm2/V-s) has a thermal energy of kT,
related to its mean thermal velocity by Eth = (m0vlh2)/2. This electron is placed in an electric
field of 100 V/cm. Show that the drift velocity of the electron in this case is small compared
with its thermal velocity. Repeat for a field of 104 V/cm, using the same value of µ„.
Comment on the actual mobility effects at this higher value of the field.
25. The region shown in figure below is a section of a silicon device that is at room temperature
(T = 300K). This region is doped with 1015cm-3 acceptor atoms. A stream of minority carriers
is injected at x = 0 and the distribution of minority carriers in the sample is assumed to be
linear, decreasing from a value of 1011 cm-3 at x = 0 to the equilibrium value at x = W. where
W is 10 microns. Determine the diffusion current density of electrons.

26. (a) A Si sample is doped with 1016 cm-3 boron atoms and a certain number of shallow donors.
The Fermi level is 0.36 eV above Ei, at 300 K. What is the donor concentration Nd? (b) A Si
sample contains 1016 cm-3 In acceptor atoms and a certain number of shallow donors. The In
acceptor level is 0.16 eV above Ev, and EF is 0.26 eV above Ev at 300 K. How many (cm-3) In
atoms are un-ionized (i.e., neutral)?
27. Consider a homogeneous gallium arsenide semiconductor at T = 300 K with Nd = 1 X 1016 cm-
3
and Na, = 0. (a) Calculate the thermal-equilibrium values of electron and hole
concentrations. (b) For an applied E-field of 10 V/cm. calculate the drift current density. (c)
Repeat parts (a) and (h) if Nd = 0 and Na = 1016 cm-3.
28. A silicon crystal having a cross-sectional area of 0.001 cm2 and a length of 10-3 cm connected
at its ends to a 10-V battery. At T = 100 K, we want a current of 100 mA in the silicon.
Calculate: (a) the required resistance R. (b) the required conductivity (c) the density of donor
atoms to be added to achieve this conductivity. and (d) The concentration of acceptor atoms
to be added to form a compensated p-type material with the conductivity given from part
(b) if the initial concentration of donor atom Nd = 1015 cm-3.
29. (a) A silicon semiconductor is in the shape of a rectangular bar with a cross-section area of
100 µm2 , a length of 0.1 cm, and is doped with 5 x 1016 cm-3 arsenic atoms. The temperature
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is T = 300 K. Determine the current if 5 V is applied across the length. (b) Repeat part (a) if
the length is reduced to 0.01 cm. (c) Calculate the average drift velocity of electrons in parts
(a) and (b).
30. (a) A GaAs semiconductor resistor is doped with acceptor impurities at a concentration of Na
= 1017 cm-3. The cross-sectional area is 85 µm2. The current in the resistor is to be I = 20 mA
with 10 V applied. Determine the required length of the device. (b) Repeat part (a) for
silicon.
31. A perfectly compensated semiconductor is one in which the donor and acceptor impurity
concentrations are exactly equal. Assuming complete ionization, determine the conductivity
of silicon at T = 300 K in which the impurity concentrations are (a) N a = Nd = 1014 cm-3 and (b)
Na = Nd = 1018 cm-3.
32. (a) In a p-type gallium arsenide semiconductor, the conductivity is σ = 5 (Ohm-cm) -1 at T =
300 K. Calculate the thermal-equilibrium values of the electron and hole concentrations. (b)
Repeat part (a) for n-type silicon if the resistivity is ρ = 8 Ohm-cm.
33. In a particular semiconductor material, µn = 1000 cm2/V-s, µp = 600 cm2/V-s, and
Nc = NV = 1019 cm-3. These parameters are independent of temperature. The
measured conductivity of the intrinsic material is σ = 10-6 (Ohm-cm)-1 at T = 300 K. Find the
conductivity at T = 500 K.
34. Consider a semiconductor that is uniformly doped with Nd = 1014 cm-3 and Na = 0,
with an applied electric field of E = 100 V/cm. Assume that µn = 1000 cm2/V-s and µp = 0. Also
assume the following parameters: NC = 2 x 1019 (T/300)3/2 cm-3, NV = 1 x 1019 (T/300)3/2 cm-3, Eg
= 1.1 eV. (a) Calculate the electric-current density at T = 300 K. (b) At what temperature will
this current increase by 5 percent? (Assume the mobilities are independent of temperature.)

For example: 65 is 23MVD0065

Q1: 61, 62

Q2: 63, 64

Q3: 65, 66

Q4: 67, 68

Q7: 69, 70

Q6: 71, 72

Q12: 73, 74

Q13: 76, 77

Q5: 78, 79

Q8: 80, 81

Q11: 82, 83

Q9: 84, 85

Q15: 86, 87

Q10: 88, 89
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Q16: 90, 91

Q22: 92, 93

Q14: 94, 95

Q23: 96, 97

Q17: 98, 99

Q18: 100, 101

Q19: 102, 103

Q20: 104, 105

Q21: 106, 107

Q34: 108, 109

Q33: 110, 111

Q27: 112, 113

Q28: 114, 115

Q29: 116, 117

Q30: 118