BY527

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Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Controlled avalanche characteristics
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• High surge current capability
• Material categorization:
for definitions of compliance please see
949539
[Link]/doc?99912

DESIGN SUPPORT TOOLS click logo to get started APPLICATIONS

• General purpose
Models
Available

MECHANICAL DATA 
Case: SOD-57 

Terminals: plated axial leads, solderable per MIL-STD-750, 
method 2026 
Polarity: color band denotes cathode end 
Mounting position: any 
Weight: approx. 369 mg

ORDERING INFORMATION (Example)

DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BY527 BY527TR 5000 per 10" tape and reel 25 000
BY527 BY527TAP 5000 per ammopack 25 000

PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BY527 VR = 800 V; IF(AV) = 2 A SOD-57

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage See electrical characteristics BY527 VR 800 V
Reverse voltage, non repetitive lR = 100 μA BY527 VRSM 1250 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 50 A
Repetitive peak forward current lFRM 12 A
Average forward current = 180° IF(AV) 2 A
Pulse avalanche peak power Tj = 175 °C, tp = 20 μs, half sinus wave PR 1000 W
Pulse energy in avalanche mode, non
l(BR)R = 1 A, Tj = 175 °C ER 20 mJ
repetitive (inductive load switch off)
i2t rating i2 t 8 A2 s
Junction and storage temperature range Tj = Tstg -55 to + 175 °C

MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Lead length l = 10 mm, TL = constant RthJA 45 K/W
Junction ambient
On PC board with spacing 25 mm RthJA 100 K/W

Rev. 1.8, 20-Feb-18 1 Document Number: 86007

For technical questions within your region: DiodesAmericas@[Link], DiodesAsia@[Link], DiodesEurope@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 BY527
[Link]
Vishay Semiconductors

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
IF = 1 A VF - 0.9 1 V
Forward voltage
IF = 10 A VF - - 1.65 V
VR = 800 V IR - 0.1 1 μA
Reverse current
VR = 800 V, Tj = 100 °C IR - 5 10 μA
Breakdown voltage IR = 100 μA, tp/T = 0.01, tp = 0.3 ms V(BR) 1250 - - V
Diode capacitance VR = 4 V, f = 1 MHz CD - 16 - pF
IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 4 μs
Reverse recovery time
IF = 1 A, dI/dt = 5 A/μs, VR = 50 V trr - - 4 μs
Reverse recovery charge IF = 1 A, dI/dt = 5 A/μs Qrr - - 3 μC

TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

120 2.5
RthJA - Ther. Resist. Junction/Ambient (K/W)

l l VR = VRRM

IFAV - Average Forward Current (A)

100 half sine wave
2.0
RthJA = 45 K/W

80 l = 10 mm
1.5
TL = constant
60
1.0
40
RthJA = 100 K/W
0.5
20 PCB: d = 25 mm

0 0
0 5 10 15 20 25 30 0 20 40 60 80 100 120 140 160 180
949101 l - Lead Length (mm) 16423 Tamb - Ambient Temperature (°C)

Fig. 1 - Typ. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature

100 1000

VR = VRRM
10
IR - Reverse Current (μA)
IF - Forward Current (A)

Tj = 175 °C 100
1

0.1
10
Tj = 25 °C
0.01

0.001 1
0 0.5 1 1.5 2 2.5 3 25 50 75 100 125 150 175
16422 VF - Forward Voltage (V) Tj - Junction Temperature (°C)
16424

Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Reverse Current vs. Junction Temperature

Rev. 1.8, 20-Feb-18 2 Document Number: 86007

For technical questions within your region: DiodesAmericas@[Link], DiodesAsia@[Link], DiodesEurope@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
 BY527
[Link]
Vishay Semiconductors

300 40
PR - Reverse Power Dissipation (mW)

VR = VRRM f = 1 MHz
35

CD - Diode Capacitance (pF)

250
30
200
25
PR - Limit at 100 % VR
150 20

15
100
PR - Limit at 80 % VR 10
50
5

0 0
25 50 75 100 125 150 175 0.1 1 10 100
16425 Tj - Junction Temperature (°C) 16426 VR - Reverse Voltage (V)

Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage

1000

VRRM = 1000 V, RthJA = 100 K/W

Zthp - Thermal Resistance
for Pulse Cond. (K/W)

100
tp/T = 0.5

tp/T = 0.2 Tamb = 25 °C

tp/T = 0.1 Tamb = 45 °C

10
tp/T = 0.05 Tamb = 60 °C

tp/T = 0.02 Tamb = 70 °C

tp/T = 0.01 Tamb = 100 °C
1
10-5 10-4 10-3 10-2 10-1 100 101 1 10 100

tp - Pulse Length (s) IFRM - Repetitive Peak

94 9178 Forward Current (A)
Fig. 7 - Thermal Response

PACKAGE DIMENSIONS in millimeters (inches): SOD-57

0.82 (0.032) max.
3.6 (0.142) max.

26 (1.024) min. 4 (0.157) max. 26 (1.024) min.

20543

Rev. 1.8, 20-Feb-18 3 Document Number: 86007

For technical questions within your region: DiodesAmericas@[Link], DiodesAsia@[Link], DiodesEurope@[Link]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
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Revision: 01-Jan-2023 1 Document Number: 91000