2SB1481

TOSHIBA Transistor Silicon PNP Epitaxial Type

2SB1481
Switching Applications
Unit: mm

• High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1.5 A)

• Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)
• Complementary to 2SD2241

Absolute Maximum Ratings (Tc = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO −100 V

Collector-emitter voltage VCEO −100 V
Emitter-base voltage VEBO −5 V
DC IC ±4
Collector current A
Pulse ICP ±6
Base current IB −0.3 A

Collector power Ta = 25°C 2.0

PC W JEDEC ―
dissipation Tc = 25°C 25
JEITA SC-67
Junction temperature Tj 150 °C
TOSHIBA 2-10R1A
Storage temperature range Tstg −55 to 150 °C
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).

Equivalent Circuit

Collector

Base

≈ 4.5 kΩ ≈ 300 Ω

Emitter

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Electrical Characteristics (Tc = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = −100 V, IE = 0 ― ― −2.0 μA

Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −2.5 mA
Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB =0 −100 ― ― V
hFE (1) VCE = −2 V, IC = −1.5 A 2000 ― ―
DC current gain
hFE (2) VCE = −2 V, IC = −3 A 1000 ― ―
Collector-emitter saturation voltage VCE (sat) IC = −3 A, IB = −6 mA ― ― −1.5 V
Base-emitter saturation voltage VBE (sat) IC = −3 A, IB = −6 mA ― ― −2.0 V
Collector-emitter reverse voltage VCEO IC = 1 A, IB = 0 ― ― 2.0 V

Turn-on time ton Output ― 0.15 ―

20 μs
IB2

IB2

10 Ω
IB1

Switching time Storage time tstg Input IB1 ― 0.80 ― μs

VCC ≈ −30 V

Fall time tf ― 0.40 ―

−IB1 = IB2 = 6 mA, duty cycle ≤ 1%

Marking

B1481 Part No. (or abbreviation code)

Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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IC – VCE IC – VBE
−5 −4
Common emitter Common emitter
Tc = 25°C VCE = −2 V
−4
(A)

(A)
−3
−500
Collector current IC

Collector current IC
−3 −450
−400
−2
−350
−2
−300 Tc = 100°C 25 −55

−1
−1 −250

IB = −200 μA

0 0
0 −1 −2 −3 −4 −5 −6 0 −0.8 −1.6 −2.4 −3.2 −4.0

Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)

hFE – IC VCE (sat) – IC

10000 −5
Collector-emitter saturation voltage

Common emitter
−3 IC/IB = 500
5000 Tc = 100°C
DC current gain hFE

VCE (sat) (V)

3000 25

Tc = −55°C
−55 −1
25
1000
100
−0.5
500 Common emitter
)

VCE = −2 V −0.3
300 −0.1 −0.3 −0.5 −1 −3 −5
−0.1 −0.3 −0.5 −1 −3 −5 −10
Collector current IC (A)
Collector current IC (A)

Safe Operating Area

−10
IC max (pulsed)*
−5 100 μs*
VBE (sat) – IC −3 IC max (continuous)
(A)

−10 1 ms*
10 ms*
Base-emitter saturation voltage

Common emitter
Collector current IC

IC/IB = 500 −1 100 ms*

−5
VBE (sat) (V)

−0.5
−3
−0.3
Tc = −55°C
*: Single nonrepetitive pulse
25 −0.1 Tc = 25°C
−1 100 Curves must be derated linearly with
−0.05 increase in temperature.
VCEO max
−0.5 −0.03
−0.1 −0.3 −0.5 −1 −3 −5 −0.3 −1 −3 −10 −30 −100

Collector current IC (A) Collector-emitter voltage VCE (V)

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RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.

• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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