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PNP Power Transistors 2SA1075 2SA1076 Specs

This document provides product specifications for SavantIC Semiconductor's 2SA1075 and 2SA1076 silicon PNP power transistors. The transistors are in an MT-200 package and are suitable for high frequency power amplifiers, audio power amplifiers, switching regulators, and DC-DC converters due to their fast switching speed and excellent safe operating area. Key specifications include collector-emitter breakdown voltages of -120V and -160V, current gain values from 40-200, and switching times below 0.5 microseconds.

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48 views3 pages

PNP Power Transistors 2SA1075 2SA1076 Specs

This document provides product specifications for SavantIC Semiconductor's 2SA1075 and 2SA1076 silicon PNP power transistors. The transistors are in an MT-200 package and are suitable for high frequency power amplifiers, audio power amplifiers, switching regulators, and DC-DC converters due to their fast switching speed and excellent safe operating area. Key specifications include collector-emitter breakdown voltages of -120V and -160V, current gain values from 40-200, and switching times below 0.5 microseconds.

Uploaded by

Lope Garcia
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1075 2SA1076

DESCRIPTION
·With MT-200 package
·Complement to type 2SC2525,2SC2526
·Fast switching speed
·Excellent safe operating area

APPLICATIONS
·High frequency power amplifiers
·Audio power amplifiers
·Switching regulators
·DC-DC converters

PINNING(see Fig.2)

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (MT-200) and symbol
3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

2SA1075 -120 V
VCBO Collector-base voltage Open emitter
2SA1076 -160 V

2SA1075 -120 V
VCEO Collector-emitter voltage Open base
2SA1076 -160 V

VEBO Emitter-base voltage Open collector -7 V

IC Collector current -12 A

PC Collector power dissipation TC=25 120 W

Tj Junction temperature 150

Tstg Storage temperature -65~150


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1075 2SA1076

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

2SA1075 -120
Collector-emitter
V(BR)CEO IC=-1mA ;RBE=< V
breakdown voltage
2SA1076 -160

2SA1075 -120
Collector-base
V(BR)CBO IC=-50µA; IE=0 V
breakdown voltage
2SA1076 -160

V(BR)EBO Emitter-base breakdown voltage IE=-50µA; IC=0 -7 V

VCEsat Collector-emitter saturation voltage IC=-5A;IB=-0.5A -1.8 V

VBE Base-emitter voltage IC=-5A;VCE=-5V -1.7 V

2SA1075 VCB=-120V; IE=0


ICBO Collector cut-off current -50 µA
2SA1076 VCB=-160V; IE=0

2SA1075 VCE=-120V; IB=0


ICEO Collector cut-off current -1 mA
2SA1076 VCE=-160V; IB=0

IEBO Emitter cut-off current VEB=-7V; IC=0 -50 µA

hFE-1 DC current gain IC=-1A ; VCE=-5V 60 200

hFE-2 DC current gain IC=-7A ; VCE=-5V 40

Cob Output capacitance IE=0 ; VCB=-10V 300 pF

fT Transition frequency IC=-1A ; VCE=-10V 60 MHz

Switching times

tr Rise time 0.15 µs


IC=-7.5A;RL=4C
ts Storage time IB1=-IB2=-0.75A 0.50 µs

tf Fall time 0.11 µs

2
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1075 2SA1076

PACKAGE OUTLINE

Fig.2 outline dimensions

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