IRFP460,

S E M I C O N D U C T O R
IRFP462
20A and 17A, 500V, 0.27 and 0.35 Ohm,
January 1998 N-Channel Power MOSFETs

Features Description
• 20A and 17A, 500V These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
• rDS(ON) = 0.27Ω and 0.35Ω
MOSFETs designed, tested, and guaranteed to withstand a
• Single Pulse Avalanche Energy Rated specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
• SOA is Power Dissipation Limited applications such as switching regulators, switching conver-
• Nanosecond Switching Speeds tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
• Linear Transfer Characteristics gate drive power. These types can be operated directly from
• High Input Impedance integrated circuits.

• Related Literature Formerly developmental type TA17465.

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Ordering Information
D
PART NUMBER PACKAGE BRAND

IRFP460 TO-247 IRFP460

G
IRFP462 TO-247 IRFP462
S
NOTE: When ordering, use the entire part number.

Packaging
JEDEC STYLE TO-247

SOURCE
DRAIN
GATE

DRAIN
(TAB)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. File Number 2291.2
Copyright © Harris Corporation 1997
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 IRFP460, IRFP462

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

IRFP460 IRFP462 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 500 500 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . VDGR 500 500 V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 20 17 A
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 12 11 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 80 68 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 250 250 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 2.0 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . EAS 960 960 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . TL 300 300 oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260 260 oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to TJ = 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V, (Figure 10)
IRFP460 500 - - V

IRFP462 500 - - V

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2 - 4 V

Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA

VDS = 0.8 x Rated BVDSS,, VGS = 0V TJ = 125o - - 250 µA

On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
IRFP460 20 - - A

IRFP462 17 - - A

Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA

Drain to Source On Resistance (Note 2) rDS(ON) ID = 11A, VGS = 10V, (Figures 8, 9)

IRFP460 - 0.24 0.27 Ω

IRFP462 - 0.27 0.35 Ω

Forward Transconductance (Note 2) gfs VDS ≥ 50V, IDS > 11A, (Figure 12) 13 19 - S

Turn-On Delay Time td(ON) VDD = 250V, ID = 21A, RGS = 4.3Ω, RD = 12Ω, - 23 35 ns
VGS = 10V, (Figures 17, 18) MOSFET Switching
Rise Time tr Times are Essentially Independent of Operating - 81 120 ns
Temperature
Turn-Off Delay Time td(OFF) - 85 130 ns

Fall Time tf - 65 98 ns

Total Gate Charge Qg(TOT) VGS = 10V, ID = 21A, VDS = 0.8 x Rated BVDSS, - 120 190 nC
(Gate to Source + Gate-Drain) IG(REF) = 1.5mA, (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Gate to Source Charge Qgs OperatingTemperature - 18 - nC

Gate to Drain “Miller” Charge Qgd - 62 - nC

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 IRFP460, IRFP462

Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz, (Figure 10) - 4100 - pF

Output Capacitance COSS - 480 - pF

Reverse Transfer Capacitance CRSS - 84 - pF

Internal Drain Inductance LD Measured from the Modified MOSFET - 5.0 - nH

Drain Lead, 6mm Symbol Showing the
(0.25in) from Package to Internal Device
Center of Die Inductances
D
Internal Source Inductance LS Measured from the - 13 - nH
Source Lead, 6mm LD
(0.25in) from Header to
Source Bonding Pad G
LS

Thermal Resistance Junction to Case RθJC - - 0.50 oC/W

Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 30 oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current ISD Modified MOSFET D - - 20 A

Symbol Showing the
Pulse Source to Drain Current ISDM Integral Reverse - - 80 A
(Note 3) P-N Junction Rectifier
G

Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 21A, VGS = 0V, (Figure 13) - - 1.8 V

Reverse Recovery Time trr TJ = 25oC, ISD = 21A, dISD/dt = 100A/µs 280 580 1200 ns

Reverse Recovery Charge QRR TJ = 25oC, ISD = 21A, dISD/dt = 100A/µs 3.8 8.1 18 µC

NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 4.3mH, RGS = 25Ω, Peak IAS = 20A (Figures 15, 16).

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Typical Performance Curves Unless Otherwise Specified

1.2 20
POWER DISSIPATION MULTIPLIER

1.0
16

ID, DRAIN CURRENT (A)

IRFP460
0.8
12 IRFP462

0.6
8
0.4

4
0.2

0 0
0 50 100 150 25 50 75 100 125 150
TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE CASE TEMPERATURE

1
ZθJC, THERMAL IMPEDANCE (oC/W)

0.5

0.1 0.2
0.1
0.05 PDM
0.02
10-2 0.01
t1
SINGLE PULSE t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-5 10-4 10-3 10-2 0.1 1 10
t1, RECTANGULAR PULSE DURATION (S)

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

103 40
VGS = 10V 80µs PULSE TEST
5 OPERATION IN THIS
AREA IS LIMITED VGS = 6.0V
2 BY rDS(ON)
32
ID, DRAIN CURRENT (A)

IRFP460
ID, DRAIN CURRENT (A)

102 VGS = 5.5V

10µs
5 IRFP462
IRFP460 100µs 24
2
10 IRFP462
1ms
5 16 VGS = 5.0V
2 10ms
1
8 VGS = 4.5V
5 T = 25oC DC
C
T = MAX RATED
2 J VGS = 4.0V
SINGLE PULSE
0.1 0
1 2 5 10 2 5 102 2 5 103 0 50 100 150 200 250
VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

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 IRFP460, IRFP462

Typical Performance Curves Unless Otherwise Specified (Continued)

40 102
80µs PULSE TEST VGS = 10V VDS ≥ 50V
VGS = 6.0V 80µs PULSE TEST
32
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT(A)

VGS = 5.5V 10

24
TJ = 150oC
1
16 VGS = 5.0V TJ = 25oC

8 0.1
VGS = 4.5V

VGS = 4.0V
0 10-2
0 4 8 12 16 20 0 2 4 6 8 10
VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

2.5 3.0
80µs PULSE TEST VGS = 10V, ID = 11A
NORMALIZED DRAIN TO SOURCE
rDS(ON), DRAIN TO SOURCE

2.0 2.4
ON RESISTANCE (Ω)

ON RESISTANCE

VGS = 10V
1.5 1.8

1.0 1.2

0.5 0.6
VGS = 20V

0 0
0 20 40 60 80 100 -40 0 40 80 120 160
ID, DRAIN CURRENT (A) TJ , JUNCTION TEMPERATURE (oC)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

VOLTAGE AND DRAIN CURRENT RESISTANCE vs JUNCTION TEMPERATURE

1.25 10000
ID = 250µA VGS = 0V, f = 1MHz
NORMALIZED DRAIN TO SOURCE

CISS = CGS + CGD

1.15 8000 CRSS = CGD
BREAKDOWN VOLTAGE

C, CAPACITANCE (pF)

COSS = CDS + CGD

CISS

1.05 6000

COSS
0.95 4000

0.85
2000 CRSS

0.75
-40 0 40 80 120 160 0
1 2 5 10 2 5 102
TJ , JUNCTION TEMPERATURE (oC) VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VOLTAGE vs JUNCTION TEMPERATURE

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 IRFP460, IRFP462

Typical Performance Curves Unless Otherwise Specified (Continued)

40 102
VDS ≥ 50V

ISD, SOURCE TO DRAIN CURRENT (A)

80µs PULSE TEST 5
gfs, TRANSCONDUCTANCE (S)

32
2

TJ = 25oC 10
24
5 TJ = 150oC
TJ = 25oC
2
16
1
TJ = 150oC
5
8
2

0 0.1
0 8 16 24 32 40 0 0.4 0.8 1.2 1.6 2.0
ID, DRAIN CURRENT (A) VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20
ID = 21A

VDS = 400V
16
VGS, GATE TO SOURCE (V)

VDS = 250V
VDS = 100V
12

0
0 40 80 120 160 200
Qg(TOT), TOTAL GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

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 IRFP460, IRFP462

Test Circuits and Waveforms

VDS
BVDSS

L tP
VDS

VARY tP TO OBTAIN IAS

+ VDD
REQUIRED PEAK IAS RG
VDD
VGS -
DUT

tP
0V IAS
0
0.01Ω
tAV

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON tOFF

td(ON) td(OFF)

tr tf
RL VDS
90% 90%

+
VDD 10% 10%
RG
- 0

DUT 90%

VGS 50% 50%

PULSE WIDTH
VGS 10%
0

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

VDS
CURRENT (ISOLATED
REGULATOR SUPPLY) VDD

Qg(TOT)
SAME TYPE VGS
AS DUT Qgd
12V
0.2µF 50kΩ
BATTERY Qgs
0.3µF

D VDS

G DUT 0

IG(REF) S IG(REF)
0
VDS
IG CURRENT ID CURRENT
SAMPLING SAMPLING 0
RESISTOR RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

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