Electronics “THE ESTABLISHED LEADER IN EE REVIEW” LEGIT MULTIVECTOR Review and Training Center Ground Floor, Cuevasville Tower F. Cayco corner Earnshaw St. Sampaloc, Manila Tel, No, (02) 8731-7423LEGIT MULTIVECTOR REVIEW AND TRAINING CENTER ELECTRONICS ‘Semiconductors ~ substances which has resistivity (10 to 0.5 Q-m) between conductors and insulators: - common examples are germanium, silicon, selenium, carbon, ete. ~ can be classified as either Intrinsic Semiconductor or Extrinsic Semiconductor Intrinsic Semiconductor = A semiconductor in an extremely pure form, Doping - the process of adding impurities to a semiconductor to increase either the number of free electrons or holes in the semiconductor crystal Extrinsic Semiconductor - altered pure semiconductor by adding a small amount of suitable impurity to increase its conducting properties ~ extrinsic semiconductors can be classified as N-type and P-type semiconductors depending upon the type of impurity added N-type Semiconductor ~ produced when a small amount of pentavalent impurity is added to a pure semiconductor P-type Semiconductor ~ produced when a small amount of trivalent impurity is added to a pure semiconductor PN Junction - the contact surface when a P-type semiconductor is joined with an N-type semiconductor Biasing a PN Junction Forward Biasing Reverse Biasing = application of an external DC voltage to the junetion in a direction such that it cancels the potential barrier, thus permitting current flow Prin Ea = the positive terminal of the battery is connected to the P-type semiconductor of the device and the negative terminal is connected to N-lype semiconductor = reduces the barrier potential or voltage ~ the voltage of the anode is greater than the voltage of the cathode = large forward current ~ thin depletion layer ~ low resistance ~ allows current flow ~ the magnitude of current depends on the forward voltage = acts as a conductor = application of an external DC voltage to the junction in a direction such that it increases the potential barrier, thus preventing current flow Pp in = ~ the negative terminal of the battery is connected to the P-type semiconductor of the device and the positive terminal is, connected to N-type semiconductor - strengthens the barrier potential or voltage ~ the voltage of the cathode is greater than the voltage of the anode = small forward current ~ thick depletion layer ~ high resistance ~ prevents current flow = zero current ~ acts as an insulator Electronics Page|LEGIT MULTIVECTOR REVIEW AND TRAINING CENTER ELECTRONICS Diode ~ a non-linear, two-terminal device formed by two doped regions of a semiconductor, usually silicon, separated by a PNjunction ~ usually used as rectifier in electronic circuits, due ofits ability to conduct current in one direction and block currentiin the other direction, converting AC to DC ‘Common Applications of Diodes |. Rectification ~ diodes generally act as a rectifier which is a device that converts AC to DC Half-Wave Rectification ~ conducts current during the positive half-cycles and suppresses the negative half-cycles of an AC supply - the output frequency is equal to the input frequency (fs ~ maximum half-wave rectifier efficiency is equal to 40.6% Full Wave Rectification ~ conducts current in the same direction for both hall-cycles of an input AC supply ~ The output frequency is twice the input frequency (fax = 2f.). ~ maximum full wave rectifier efficiency is equal to 81.2% ‘Types of Full Wave Rectifier 4. Center-Tapped Full Wave Rectifier - consists of two diodes and a transformer 2. Full Wave Bridge Rectifier - consists of four diodes: Ripple Factor (r) is an indication of the effectiveness of the fiter where: Vine] Moc. Vipp 7 peak-to-peak ripple voltage (V) Voc ~ DC (average) value of the filter’s output (V) Clamping Circuit (Clamper) ~ used to add a de level to a signal voltage - often referred to as dc restorers because they are used to restore a dc level to a signal that has been processed through capacttively coupled amplifiers - places either the positive or negative peak of a signal at a desired DC level UL. Clipping Circuit (Clipper or Limiter) ~ circuit with which the waveform is shaped by removing (or clipping) a portion of the applied wave IV. Voltage Multiplication ~ use clamping action to increase peak rectified voltages without the necessity of increasing the transfomer's voltage rating ~ multiplication factors are commonly of two, three, and four ~ used in high-voltage, low-current applications such as cathode-ray tubes (CRTs) and particle accelerators V. Switch in Logic Circuits VI. Demodulation Circuits VIL. Optical Communication Devices VIILLED’s for digital display IX. Voltage Regulation Elecrorios Pape |2LEGIT MULTIVECTOR REVIEW AND TRAINING CENTER ELECTRONICS Special Purpose Diodes 1. Zener Diode - a silicon PN junction device that is designed for operation in the reverse-breakdown region - a type of voltage regulator for providing stable reference voltages for use in power supplies, voltmeters, and other instruments, I. Varactor Diode - a diode that always operates in reverse bias and is doped to maximize the inherent capacitance of the depletion region 2 voltage-dependent semiconductor device which is used when a variable capacitance is required IL, Light Emitting Diode (LED) ~ when forward-biased, electrons cross the PN junction from the n-type material and recombine with holes in the p-type material releasing sufficient energy to produce photons which emit monochromatic (single color) light. IV. Photodiode - a special type of PN junction device that generates current when exposed to light ~ operates in reverse bias, and has a small transparent window that allows light to strike the PN junetion V. Laser Diode - stands for light amplification by stimulated emission of radiation - laser light is monochromatic, which means that it consists of a single color and not a mixture of colors ~ laser light is also called coherent light, a single wavelength, as compared to incoherent light, which consists of a wide band of wavelengths VL. Schottky Diode - high-ourrent diodes used primarily in high-frequency and fast-switching applications - also known as hot-carrier diodes, VIL. PIN Diode - consists of heavily doped P and N regions separated by an intrinsic () region - when forward-biased, it acts like a current-controlled variable resistance VIILStep Recovery Diodes (SRD) - uses graded doping where the doping level of the serniconductive materials is reduced as the PN junetion is approached ~ used as a charge controlled switch with the ablity to generate very sharp pulses 1x. Tunnel Diodes - exhibits a special characteristic known as negative resistance which is useful in oscillator and ‘microwave amplifier applications X. Current Regulator Diode - often referred as a constant-current diode - rather than maintaining a constant voltage, as the zener diode does, this diode maintains a constant current, Electronics Page |3LEGIT MULTIVECTOR REVIEW AND TRAINING CENTER ELECTRONICS Transistors ~ A three lead semiconductor device that acts as an electrically controlled switch or a current ampifior Classification of Transistors |. Bipolar Junction Transistor (BJT) ~ constructed with three doped semiconductor regions (base, collector, emitter) separated by ‘two PN junctions (base-emitter junction and collector-base junction) Transistor Currents [fz =e +1 ‘ wk %e Te__Boc DC Current Gain Poe = f= po eo: = THs where: Ig > base current (A) Ig eollector current (A) I+ emitter current (A) NPN Transistor PNP Transistor ~ majority carriers are electrons ~ majority carriers are holes Field Effect Transistor (FET) ~ three terminal (gate, drain, source) device that is constructed with no PN-junctions within the ‘main current carrying path between the drain and the source terminals Junction Field Effect Transistor (JFET) ~ a narrow piece of high resistivity semiconductor material forming a “channef of either Neype or P-type silicon for the majority carriers to flow through is used instead of a PN Junction ~ operates with a reverse-biased PN junction to control current in a channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) - the gate of the MOSFET is insulated from the channel by a silicon dioxide (SiO) layer instead of a PN junction structure Thyristor ‘a 4layer device with two terminals, the anode and the cathode ‘constructed of four semiconductor layers that form a pnpn structure acts as a switch and remains off until the forward voltage reaches @ certain value, then ittums on and conducts, Silicon-Controlled Rectifier (SCR) - a4-layer pnpn device similar to the 4-layer diode but with three terminals: anode, cathode, gate IL Light Activated SCR (LASCR) ~ a conventional SCR but can also be light-triggered Diac ~ a thyristor that can conduct current in either direction when activated WV. Tria = adiac with a gate terminal = can be tured on by a pulse of gate current and does not require the breakover voltage to iniate conduction unlike the diac ~ acts like two SCRs connected in parallel and in opposite direction with a common gate terminal V. Silicon-Controlled Switch (SCS) ~ four-terminal thyristor that has two gate terminals that are used to trigger the device on and off Electronics Pape | 4LEGIT MULTIVECTOR REVIEW AND TRAINING CENTER ELECTRONICS VI. Unijunction Transistor (UJT) ~ a three-terminal device which has a single PN junction VIL. Programmable Unijunction Transistor (PUT) ~ a three-terminal thyristor thatis triggered into conduction when the voltage at the anode exceeds the voltage at the gate Operational Amplifiers (Op-Amp) ~ has two input terminals, the inverting (-) input and the non-inverting (+) input, and one output terminal = most op-amps operate with two de supply voltages, one positive and the other negative while some have a single de supply Inverting Amplifier Re o—_} Your Tose To5p Ted Toop stage Cah Wage ay Aa oma Soca my pens Electronics Page |10, 1. LEGIT MULTIVECTOR REVIEW AND TRAINING CENTER ELECTRONICS REE - Sept. 2017 The electron is a/an charged particle of electricity A. neutral B. negatively C. positively D. zero Which has the least number of valence electrons? A. conductor ©. insulator B, elemental semiconductor D. compound semiconductor A semiconductor that is free from impurities A. intrinsic semiconductor . extrinsic semiconductor B. compensated semiconductor D. elemental semiconductor REE - Sept. 2009/ Sept. 2017 Which of the following defined the Fermi energy? A. The amount of energy which a valence electron can have at room temperature. B, The amount of energy which a hole can have at room temperature. C. The amount of energy which must be given to an electron to move it to conductor band. D. The amount of energy which must be given to hole it in valence band. P-type semiconductor has an excess of A. electron B. hole C. proton D. neutron REE - Sept. 2015 / Apr. 2018 The depletion region of a junction diode forms the of the capacitor. A. Plates B. Dielectric C. Package D- none of these REE - Oct. 1997 A semiconductor frequently used to rectify AC current to DC is called A. zine oxide B. transistor C. tube D. diode REE - April 1997 The resistor is connected across an AC supply of 220 V. The power drawn is 1000 W. If a diode were connected in series with the resistor, what would be the power absorbed by the resistor? A. 850 W B. 250 ©. 200W. D. 500 W REE - Oct, 1996 A circuit consists of a resistor which is connected in series with a perfect diode. When connected across a 20 V battery, then current measured 10 A. However, when connected across @ 30 V battery but with a reverse polarity, what would be the new current? A15A B. zero current C.20A D. None of these In order to measure the voltage signals from a filtered rectifier circuit, DC and AC voltmeters were used. The readings were 30 V DC and 2.5 V rms respectively. Determine the ripple of the output voltage, A9% B. 8.33% C.7% D.7.33% REE - Sept. 2004 An ideal full wave rectifier with non-inductive load has zero transformation losses. What is the efficiency? A100 B.90 c.80 D.70 Electronics Page |8LEGIT MULTIVECTOR REVIEW AND TRAINING CENTER ELECTRONICS REE — Oct. 1996 12. An unregulated power supply which consists of a transformer, a rectifier and a filter has, some characteristics which are as follows EXCEPT one. Which one is this? A. Ithas good voltage regulation. B, Itis relatively expensive. C. The output voltage varies with the load. . The output voltage depends on the input voltage. 13, The resistance of a semiconductor is known as A. bulk resistance C. extrinsic resistance B. intrinsic resistance D. dynamic resistance 14. Half wave rectifiers has a maximum efficiency of A 40.6% B. 78.5% C.81.2% D. 50% 16, Diode circuit that is used to cut @ portion of the input signal. A. clipper B. clamper C. peak detector —_D. level shifter 16. Ripple factor of a full wave rectifier. A024 B.2.42 c.121 D048 17. The output of a full wave rectifier with an input frequency of 60 Hz. A, 60 Hz B. 120 Hz ©. 200 Hz D. 100 He, 18. Zener diode normally requires biasing A. forward B. reverse C. maximum D. impedance 19. What is one important thing that transistors do? A. amplify weak signals 8. rectify line voltage C. emit sound D. emit light 20. An advantage of a transistor is A. small size B.lack of heater —_C. It lasts indefinitely D. all of these 21.A transistor has a collector current of 2 mA. Ifthe current gain is gain 135, what is the base current? A148 pA B.15.8 pA C.16.8 pA D.17.8 pA 22. The reason, why a metal tab of a power transistor is fasten to the chassis of an electronic, ‘equipment is A. to hold the transistor firmly B. for aesthetic value purposes C. for heat to escape easily D. to contribute to the rigidity of the equipment REE - April 1998 28. Itis a very powerful small component of a computer. Which one? A diode B. triode C. chip D. intemet REE — Sept. 2004 24. What is the equivalent of the collector terminal of transistor in FET? A grid B. gate C. source D. drain Electronics Page |7LEGIT MULTIVECTOR REVIEW AND TRAINING CENTER ELECTRONICS 25. A prototransistor can be used for A. high isolation B. lighting control C. relays Dall of these 26. An inverting op-amp with a feedback resistance of R; and another resistance of magnitude R; has a voltage gain of A.- RR: B.Ri/R C.1#R IR: D4 27. A non-inverting op-amp with a feedback resistance of R; and another resistance R, has 2 voltage gain of A-RIR: B.R/R C.1#R IR, D.1-RIR, REE ~ Sept. 2005 28. A negative feedback amplifier has 0.5% of output voltage feedback and antiphase with it. The gain of the amplifier then is 150. Calculate the amplifier gain without feedback. A. 600 B. 450 c. 800 D. 700 REE - April 2006 29. A triode has an anode-slope resistance of 12 kO and an amplification factor of 15. Determine the stage gain ift is used as an amplifier with an anode load consisting of a choke having a resistance of 20 kO and an inductance of 7,500 HH when the input voltage has a frequency of 600 KHZ. A-12.17 B.-15.65 C. 14.68 D.-29.21 Electronics Page |