VLSI Technology
Lecture 3
VLSI process for MOSFET
Dr. Brajendra Singh Sengar (PhD, IIT Indore)
Assistant Professor
Department of Electronics and Communication Engineering
National Institute of Technology Srinagar
Email id:
[email protected] VLSI Technology
BJT
• High speed
MOSFET
• High density
BICMOS
MOSFET
Field S, D Gate Metal
Oxide Doping Doping Contacts
• Take a Substrate.
Field Oxide • Grow a thick oxide
n
Using Photolithography
• Opening of window
Source and Drain
• Doped region extend laterally as well (precise doping is
doping difficult)
P+
Further Oxidation
P+
• Already oxide?, why we need oxide
Gate Oxidation
1. Field oxide is very thick (>800 nm).
2. Gate oxide is very thin (<100 nm).
3. Role of filed oxide is Masking so quality is not important.
4. Gate oxide quality is very important.
Gate
Oxidation
P+
Metal Contacts
P+
In comparison to BJT. MOSFET are very simple
but the controlling is very difficult
Why we made P-MOSFET?
MOSFET
Depletion mode Enhancement mode
(normally on) (normally off)
P MOSFET fabricated first in the integrated circuit technology?
Why we made P-MOSFET?
Depletion mode Enhancement mode
(normally on) (normally off)
N type,-Ve P type,+Ve N type,+Ve P type,-Ve
threshold threshold threshold threshold
needed for needed for needed for needed for
turning off turning off turning ON turning ON
Why we made P-MOSFET?
For Digital circuits we want enhancement MOSFET
Enhancement mode
(normally off)
N type,+Ve P type,-Ve threshold
threshold needed needed for turning
for turning ON ON
Why we made P-MOSFET?
Threshold voltage depends on the gate oxide thickness, on the
substrate doping concentration, Type of metals, so many things.
Controllable to some extent
During process, which are very difficult to control and there are
unwanted charges in the oxide (+ve charges).
How to counter this charge (by applying negative threshold).
Why we made P-MOSFET?
Example: Vth of n type enhancement MOSFET = 0.7.
Due to charge oxide, Vth of nMosfet become = -0.7.
This works as a n-type Depletion device.
Why we made P-MOSFET?
Example: Vth of p type enhancement Mosfet = - 0.7.
Due to charge oxide, Vth of nMosfet become = -1.7.
This still works as a p-type enhancement device.
N-MOSFET
With the advancement of technology, it was possible to make quality oxide then it
become possible to fabricate N-MOSFET
New doping techniques comes as well. ION Implantation
Threshold tailoring implant
Possible to change threshold easily
Impossible to realize MOSFET without Ion implantation. BJT is possible without Ion
implantation
Polysilicon based MOSFET
Gate Gate
Field CVD +
Oxide
Oxide + Pattern +
Metal
Poly S and D
Polysilicon based MOSFET
Field
Oxide
n
Polysilicon based MOSFET
Gate
Oxide +
Poly
p
Polysilicon based MOSFET
Etching
of Poly
except at
Gate
p
Polysilicon based MOSFET
S and D
Do not even need a masking step, because you see your field oxide is
much thicker than your gate oxide. So, just a quick dip in hydrofluoric
acid will remove the thin oxide from these regions, while it will not
materially affect the thicker field oxide.
Mask not needed in order to realize your source and drain.
Self aligned technique where the source and drain are automatically aligned
to the channel region of the MOSFET
Mask Design for Metal Vs Polysilicon based
MOSFET
S D
Mask Design for Metal Vs Polysilicon based
MOSFET
Gate Oxide Mask must Overlap with the Source and Drain
S D
Mask Design for Metal Vs Polysilicon based
MOSFET
Problem with this Design
1. As we shrink the device dimension
alignment becomes very difficult S G D
Metal Vs Polysilicon based MOSFET
Problem with Metal Gate Technology
1. The Gate oxidation should be pre final Steps (need to deposit S and D
before Gate): Aluminium (low melting point)
2. After Al deposition no high temp processing is allowed.
3. All the IC process has high temp requirement.
4. By replacing Metal with Poly this disadvantage can be prevented.
Thanks
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