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Single-Cell Li-Ion/Li-Polymer Battery Charge Management Controller With Input Overvoltage Protection

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0% found this document useful (0 votes)
174 views34 pages

Single-Cell Li-Ion/Li-Polymer Battery Charge Management Controller With Input Overvoltage Protection

Uploaded by

123
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

MCP73113/4

Single-Cell Li-Ion/Li-Polymer Battery Charge Management


Controller with Input Overvoltage Protection
Features: Description:
• Complete Linear Charge Management Controller: The MCP73113/4 are highly integrated Li-Ion battery
- Integrated Input Overvoltage Protection charge management controllers for use in
- Integrated Pass Transistor space-limited and cost-sensitive applications. The
MCP73113/4 devices provide specific charge
- Integrated Current Sense
algorithms for Li-Ion/Li-Polymer batteries to achieve
- Integrated Reverse Discharge Protection optimal capacity and safety in the shortest charging
• Constant Current/Constant Voltage Operation time possible. Along with their small physical size, the
with Thermal Regulation low number of external components make the
• 4.15V Undervoltage Lockout (UVLO) MCP73113/4 ideally suitable for portable applications.
The absolute maximum voltage, up to 18V, allows the
• 18V Absolute Maximum Input with OVP:
use of MCP73113/4 in harsh environments, such as
- 6.5V (MCP73113) low cost wall wart or voltage spikes from plug/unplug.
- 5.8V (MCP73114)
The MCP73113/4 devices employ a constant current/
• High Accuracy Preset Voltage Regulation Through constant voltage charge algorithm. The various
Full Temperature Range (-5°C to +55°C): +0.5% charging voltage regulations provide design engineers
• Battery Charge Voltage Options: flexibility to use in different applications. The fast
- 4.10V, 4.20V, 4.35V or 4.4V charge, constant current value is set with one external
• Resistor Programmable Fast Charge Current: resistor from 130 mA to 1100 mA. The MCP73113/4
devices limit the charge current based on die
- 130 mA-1100 mA
temperature during high power or high ambient
• Preconditioning of Deeply Depleted Cells: conditions. This thermal regulation optimizes the
- Available Options: 10% or Disable charge cycle time while maintaining device reliability.
• Integrated Precondition Timer: The PROG pin of the MCP73113/4 also serves as
- 32 Minutes or Disable enable pin. When high-impedance is applied, the
• Automatic End-of-Charge Control: MCP73113/4 will be in Standby mode.
- Selectable Minimum Current Ratio: The MCP73113/4 devices are fully specified over the
5%, 7.5%, 10% or 20% ambient temperature range of -40°C to +85°C. They
- Elapse Safety Timer: 4 HR, 6 HR, 8 HR or are available in a 10-lead, DFN package.
Disable
• Automatic Recharge: Package Types (Top View)
- Available Options: 95% or Disable
MCP73113/4
• Charge Status Output-Two Style Options 3x3 DFN *
• Soft Start
• Temperature Range: -40°C to +85°C VDD 1 10 PROG
• Packaging: DFN-10 (3 mm x 3 mm) VDD 2 9 VSS
EP
VBAT 3 11 8 VSS
Applications: VBAT 4 7 STAT
• Low-Cost Li-Ion/Li-Poly. Battery Chargers NC 5 6 NC
• MP3 Players
* Includes Exposed Thermal Pad (EP); see Table 3-1.
• Digital Still Camera
• Portable Media Players
• Handheld Devices
• Bluetooth® Headsets
• USB Chargers

 2009-2013 Microchip Technology Inc. DS20002183E-page 1


MCP73113/4
Typical Application

MCP73113/4 Typical Application

1 3
AC-DC Adapter VDD VBAT
2 VBAT 4 COUT
CIN VDD +
RLED
7 10 1-Cell
STAT PROG
Li-Ion
5 NC 9 Battery
VSS RPROG

6 NC VSS 8

TABLE 1: AVAILABLE FACTORY PRESET OPTIONS


End-of-
Charge Preconditioning Preconditioning Precondition Elapse Automatic Output
OVP Charge
Voltage Charge Current Threshold Timer Timer Recharge Status
Control
4.10V 5.8V/6.5V Disable/10% 66.5%/71.5% Disable/ Disable/4 HR/ 5%/7.5%/ No/Yes Type 1/
32 Minimum 6 HR/8 HR 10%/20% Type 2
4.20V 5.8V/6.5V Disable/10% 66.5%/71.5% Disable/ Disable/4 HR/ 5%/7.5%/ No/Yes Type 1/
32 Minimum 6 HR/8 HR 10%/20% Type 2
4.35V 5.8V/6.5V Disable/10% 66.5%/71.5% Disable/ Disable/4 HR/ 5%/7.5%/ No/Yes Type 1/
32 Minimum 6 HR/8 HR 10%/20% Type 2
4.40V 5.8V/6.5V Disable/10% 66.5%/71.5% Disable/ Disable/4 HR/ 5%/7.5%/ No/Yes Type 1/
32 Minimum 6 HR/8 HR 10%/20% Type 2
Note 1: IREG: Regulated fast charge current
2: VREG: Regulated charge voltage
3: IPREG/IREG: Preconditioning charge current; ratio of regulated fast charge current
4: ITERM/IREG: End-of-Charge control; ratio of regulated fast charge current
5: MCP73113: VOVP = 6.5V, MCP73114: VOVP = 5.8V
6: VRTH/VREG: Recharge threshold; ratio of regulated battery voltage, 0% or 95%. 0% = Disabled
7: VPTH/VREG: Preconditioning threshold voltage
8: Output Status: Type 1 Fault Output Status = High Z, Type 2 Fault Output Status = Flashing

TABLE 2: STANDARD SAMPLE OPTIONS


Part VREG OVP IPREG/IREG Precharge Elapsed ITERM/IREG Auto Recharge VPTH/VREG Output
Number Timer Timer Threshold Status
(0%=Disabled)
MCP73113-16S/MF 4.10V 6.5V 10% 32 Min. 6 HR 10% 95% 71.5% Type 1
MCP73113-06S/MF 4.20V 6.5V 10% 32 Min. 6 HR 10% 95% 71.5% Type 1
MCP73114-0NS/MF 4.20V 5.8V 10% 32 Min. 6 HR 10% 95% 71.5% Type 1
Note 1: Customers should contact their distributor, representatives or field application engineer (FAE) for support and samples.
Local sales offices are also available to help customers. A listing of sales offices and locations is included in the back of
this document. Technical support is available through the web site at: http//support.microchip.com.

DS20002183E-page 2  2009-2013 Microchip Technology Inc.


MCP73113/4
Functional Block Diagram

VOREG

DIRECTION
CONTROL
VBAT
VDD

CURRENT
LIMIT
+

VREF -

G=0.001

PROG

CA
+
REFERENCE, VREF (1.21V)
BIAS, UVLO, -
AND SHDN

VOREG UVLO +
-
-
PRECONDITION
+

TERM

-
+

CHARGE CHARGE
STAT CONTROL, VA
+
TIMER,
AND -
STATUS
LOGIC

VSS
-
5.8V/6.5V
+
VDD
Input OverVP
-
95% VREG
-
110°C +
VBAT
+
TSD *Recharge
Thermal Regulation *Only available on selected options

 2009-2013 Microchip Technology Inc. DS20002183E-page 3


MCP73113/4
NOTES:

DS20002183E-page 4  2009-2013 Microchip Technology Inc.


MCP73113/4
1.0 ELECTRICAL † Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
CHARACTERISTICS a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
Absolute Maximum Ratings† operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
VDD ................................................................................18.0V may affect device reliability.
VPROG ..............................................................................6.0V
All Inputs and Outputs w.r.t. VSS ............... -0.3 to (VDD+0.3)V
Maximum Junction Temperature, TJ ............ Internally Limited
Storage temperature .....................................-65°C to +150°C
ESD protection on all pins
Human Body Model (1.5 k in Series with 100 pF)4 kV
Machine Model (200 pF, No Series Resistance) .............300V

DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(Typical) + 0.3V] to 6V,
TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (Typical) + 1.0V]
Parameters Sym. Min. Typ. Max. Units Conditions
Supply Input
Input Voltage Range VDD 4 — 16 V
Operating Supply Voltage VDD 4.2 — 6.5 V
Supply Current ISS — 4 5.5 µA Shutdown (VDD < VBAT - 150 mV)
— 700 1500 µA Charging
— 30 100 µA Standby (PROG Floating)
— 50 150 µA Charge Complete; No Battery;
VDD < VSTOP
Battery Discharge Current
Output Reverse Leakage IDISCHARGE — 0.5 2 µA Standby (PROG Floating)
Current — 0.5 2 µA Shutdown (VDD < VBAT,
or VDD < VSTOP)
6 17 µA Charge Complete; VDD is present
Undervoltage Lockout
UVLO Start Threshold VSTART 4.10 4.15 4.25 V
UVLO Stop Threshold VSTOP 4.00 4.05 4.15 V
UVLO Hysteresis VHYS — 100 — mV
Overvoltage Protection
OVP Start Threshold VOVP 6.4 6.5 6.6 V MCP73113
5.8 5.9 6.0 V MCP73114
OVP Hysteresis VOVPHYS — 150 — mV
Voltage Regulation (Constant-Voltage Mode)
Regulated Output Voltage VREG 4.079 4.10 4.121 V TA = -5°C to 55°C
Options 4.179 4.20 4.221 V VDD = [VREG(Typical)+1V]
4.328 4.35 4.372 V IOUT = 50 mA
4.378 4.40 4.422 V
Output Voltage Tolerance VRTOL -0.5 — 0.5 %
Line Regulation VBAT/ — 0.05 0.20 %/V VDD = [VREG(Typical)+1V] to 6V
VBAT)/VDD| IOUT = 50 mA
Load Regulation VBAT/VBAT| — 0.05 0.20 % IOUT = 50 mA - 150 mA
VDD = [VREG(Typical)+1V]
Supply Ripple Attenuation PSRR — -46 — dB IOUT = 20 mA, 10 Hz to 1 kHz
— -30 — dB IOUT = 20 mA, 10 Hz to 10 kHz
Note 1: Not production tested. Ensured by design.

 2009-2013 Microchip Technology Inc. DS20002183E-page 5


MCP73113/4
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(Typical) + 0.3V] to 6V,
TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (Typical) + 1.0V]
Parameters Sym. Min. Typ. Max. Units Conditions
Battery Short Protection
BSP Start Threshold VSHORT — 1.7 — V
BSP Hysteresis VBSPHYS — 150 — mV
BSP Regulation Current ISHORT — 25 — mA
Current Regulation (Fast Charge, Constant-Current Mode)
Fast Charge Current IREG 130 — 1100 mA TA = -5°C to +55°C
Regulation — 130 — mA PROG = 10 k
— 1000 — mA PROG = 1.1 k
Charge Current Tolerance IRTOL — 10 — %
Preconditioning Current Regulation (Trickle Charge Constant-Current Mode)
Precondition Current Ratio IPREG / IREG 8 10 15 % PROG = 1 kto 10 k
TA = -5°C to +55°C
— 100 — % No Preconditioning
Precondition Voltage VPTH / VREG 64 66.5 69 % VBAT Low-to-High
Threshold Ratio 69 71.5 74 %
Precondition Hysteresis VPHYS — 100 — mV VBAT High-to-Low (Note 1)
Charge Termination
Charge Termination ITERM / IREG 3.75 5 6.25 % PROG = 1 kto 10 k
Current Ratio 5.6 7.5 9.4 % TA = -5°C to +55°C

7.5 10 12.5 %
15 20 25 %
Automatic Recharge
Recharge Voltage VRTH / VREG 93 95.0 97 % VBAT High-to-Low
Threshold Ratio No Automatic Recharge
— 0 — %
Pass Transistor ON-Resistance
ON-Resistance RDSON — 350 — m VDD = 4.5V, TJ = 105°C (Note 1)
Status Indicator – STAT
Sink Current ISINK — 20 35 mA
Low Output Voltage VOL — 0.2 0.5 V ISINK = 4 mA
Input Leakage Current ILK — 0.001 1 A High-Impedance, VDD on pin
PROG Input
Charge Impedance Range RPROG 1 — 21 k
Shutdown Impedance RPROG 70 200 — k Impedance for Shutdown
PROG Voltage Range VPROG 0 — 5 V
Automatic Power Down
Automatic Power Down VPDENTRY VBAT + VBAT + — V 2.3V < VBAT < VREG
Entry Threshold 10 mV 50 mV VDD Falling
Automatic Power Down VPDEXIT — VBAT + VBAT + V 2.3V < VBAT < VREG
Exit Threshold 150 mV 250 mV VDD Rising
Thermal Shutdown
Die Temperature TSD — 150 — C
Die Temperature TSDHYS — 10 — C
Hysteresis
Note 1: Not production tested. Ensured by design.

DS20002183E-page 6  2009-2013 Microchip Technology Inc.


MCP73113/4
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [VREG(Typical)+0.3V] to 6V, TA=-40°C to +85°C.
Typical values are at +25°C, VDD= [VREG(Typical)+1.0V]
Parameters Sym. Min. Typ. Max. Units Conditions
Elapsed Timer
Elapsed Timer Period tELAPSED — 0 — Hours Timer Disabled
3.6 4.0 4.4 Hours
5.4 6.0 6.6 Hours
7.2 8.0 8.8 Hours
Preconditioning Timer
Preconditioning Timer Period tPRECHG — 0 — Hours Disabled Timer
0.4 0.5 0.6 Hours
Status Indicator
Status Output turn-off delay tOFF — — 500 µs ISINK = 1 mA to 0 mA
(Note 1)
Status Output turn-on delay tON — — 500 µs ISINK = 0 mA to 1 mA
(Note 1)
Note 1: Not production tested. Ensured by design.

TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG (Typical) + 0.3V] to 6V.
Typical values are at +25°C, VDD = [VREG (Typical) + 1.0V]
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Specified Temperature Range TA -40 — +85 °C
Operating Temperature Range TJ -40 — +125 °C
Storage Temperature Range TA -65 — +150 °C
Thermal Package Resistances
Thermal Resistance, DFN-10 (3x3) JA — 64 — °C/W 4-Layer JC51-7 Standard Board,
Natural Convection
JC — 12 — °C/W

 2009-2013 Microchip Technology Inc. DS20002183E-page 7


MCP73113/4
NOTES:

DS20002183E-page 8  2009-2013 Microchip Technology Inc.


MCP73113/4
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, VDD = [VREG(Typical) + 1V], IOUT = 50 mA and TA= +25°C, Constant-Voltage mode.

4.220 4.220
ILOAD = 50 mA
Battery Regulation Voltage (V)

Battery Regulation Voltage (V)


4.215 4.215
VBAT = 4.2V
TA = +25 C 4.210
4.210
4.205
4.205 4.200
4.200 4.195
4.195 4.190
4.185
4.190
4.180 ILOAD = 150 mA
4.185 4.175 VDD = 5.2V
4.180 4.170
4.5 4.8 5.0 5.3 5.5 5.8 6.0 -5 5 15 25 35 45 55
Supply Voltage (V) Ambient Temperature (°C)

FIGURE 2-1: Battery Regulation Voltage FIGURE 2-4: Battery Regulation Voltage
(VBAT) vs. Supply Voltage (VDD). (VBAT) vs. Ambient Temperature (TA).

4.220 1200
Battery Regulation Voltage (V)

I LOAD = 150 mA 1100 VDD = 5.2V


4.215
1000
Charge Current (mA)

VBAT = 4.2V TA = +25°C


4.210 TA = +25°C 900
800
4.205
700
4.200 600
500
4.195 400
4.190 300
200
4.185 100
4.180 0
4.5 4.8 5.1 5.4 5.7 6.0 1 2 3 4 5 6 7 8 9 10 1112 13 141516 1718 1920
Supply Voltage (V) Programming Resistor (kΩ)

FIGURE 2-2: Battery Regulation Voltage FIGURE 2-5: Charge Current (IOUT) vs.
(VBAT) vs. Supply Voltage (VDD). Programming Resistor (RPROG).

4.220
950
Battery Regulation Voltage (V)

4.215 930
Charge Current (mA)

4.210 910
4.205 890
4.200 870
4.195 850
4.190 830
4.185 810
4.180 ILOAD = 50 mA 790 RPROG = 1.33 kΩ
VDD = 5.2V 770 TA = +25°C
4.175
750
4.170
4.5 4.8 5.1 5.4 5.7 6.0
-5 5 15 25 35 45 55
Supply Voltage (V)
Ambient Temperature (°C)

FIGURE 2-3: Battery Regulation Voltage FIGURE 2-6: Charge Current (IOUT) vs.
(VBAT) vs. Ambient Temperature (TA). Supply Voltage (VDD).

 2009-2013 Microchip Technology Inc. DS20002183E-page 9


MCP73113/4
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise indicated, VDD = [VREG(Typical) + 1V], IOUT = 10 mA and TA= +25°C, Constant-Voltage mode.

675 80
655 77
Charge Current (mA)

Charge Curent (mA)


635 74
615 71
595 68
575 65
555 62
535 59
515 RPROG = 2 kΩ 56 RPROG = 20 kΩ
495 TA = +25°C 53 TA = +25°C
475 50
4.5 4.8 5.1 5.4 5.7 6.0 4.5 4.8 5.1 5.4 5.7 6.0
Supply Voltage (V) Supply Voltage (V)

FIGURE 2-7: Charge Current (IOUT) vs. FIGURE 2-10: Charge Current (IOUT) vs.
Programming Resistor (RPROG). Programming Resistor (RPROG).

350 950
330 930
Charge Current (mA)

310 910
290 Charge Current (mA) 890
270 870
250 850
230 830
210 810
190 RPROG = 5 kΩ 790 RPROG = 1.33 kΩ
170 TA = +25°C VDD = 5.2V
770
150 750
4.5 4.8 5.1 5.4 5.7 6.0 -5 5 15 25 35 45 55
Supply Voltage (V) Ambient Temperature (°C)

FIGURE 2-8: Charge Current (IOUT) vs. FIGURE 2-11: Charge Current (IOUT) vs.
Programming Resistor (RPROG). Ambient Temperature (TA).

9.0
150
8.0
Discharge Current (uA)

144
7.0
138
Fast Charge (mA)

132
6.0
126 5.0 End of Charge
120 4.0
114 3.0
108 2.0
VDD < VBAT
102 RPROG = 10 kΩ 1.0
96 TA = +25°C 0.0 VDD < VSTOP
90 -1.0
4.5 4.8 5.1 5.4 5.7 6.0 -5.0 5.0 15.0 25.0 35.0 45.0 55.0
Supply Voltage (V) Ambient Temperature (°C)

FIGURE 2-9: Charge Current (IOUT) vs. FIGURE 2-12: Output Leakage Current
Programming Resistor (RPROG). (IDISCHARGE) vs. Ambient Temperature (TA).

DS20002183E-page 10  2009-2013 Microchip Technology Inc.


MCP73113/4
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise indicated, VDD = [VREG(Typical) + 1V], IOUT = 10 mA and TA= +25°C, Constant-Voltage mode.

5.0 1
4.5 0.9
Charge Current 4.0 0.8

Battery Voltage (V)

Supply Current (A)


3.5 0.7
Input Voltage
3.0 0.6
Battery Voltage 2.5 0.5
2.0 0.4
1.5 0.3
1.0 0.2
R PROG = 2 kΩ
0.5 875 mAh Battery 0.1
0.0 0
0 15 30 45 60 75 90 105 120
Time (Minutes)

FIGURE 2-13: Overvoltage Protection Start FIGURE 2-16: Complete Charge Cycle
(50 ms/Div). (875 mAh Li-Ion Battery.

Input Voltage
Source Voltage (V)
Battery Voltage
Charge Current

Output Ripple (V)

FIGURE 2-14: Overvoltage Protection Stop FIGURE 2-17: Line Transient Response
(50 ms/Div). (ILOAD = 10 mA, Output: 1.0V/Div,
Source: 2.0V/Div).

Output Ripple (mV)

Source Voltage (V)

Output Ripple (V)


Output Current (mA)

FIGURE 2-15: Load Transient Response FIGURE 2-18: Line Transient Response
(ILOAD = 50 mA, Output: 100 mV/Div, (ILOAD = 100 mA, Output: 1.0V/Div,
Time: 100 µs/Div). Source: 2.0V/Div).

 2009-2013 Microchip Technology Inc. DS20002183E-page 11


MCP73113/4
NOTES:

DS20002183E-page 12  2009-2013 Microchip Technology Inc.


MCP73113/4
3.0 PIN DESCRIPTION
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLES
MCP73113/4
Symbol I/O Function
DFN-10
1, 2 VDD I Battery Management Input Supply
3, 4 VBAT I/O Battery Charge Control Output
5, 6 NC — No Connection
7 STAT O Battery Charge Status Output
8, 9 VSS — Battery Management 0V Reference
10 PROG I/O Battery Charge Current Regulation Program and Charge Control Enable
11 EP — Exposed Pad

3.1 Battery Management Input Supply 3.6 Current Regulation Set (PROG)
(VDD) The fast charge current is set by placing a resistor from
A supply voltage of [VREG (Typical) + 0.3V] to 6.0V is PROG to VSS during Constant-Current (CC) mode.
recommended. Bypass to VSS with a minimum of 1 µF. PROG pin is rated up to 5V with 6V absolute maximum
The VDD pin is rated 18V absolute maximum to prevent value.
sudden rise of input voltage from spikes or low-cost The PROG pin also serves as a charge control enable
AC-DC wall adapter. pin. Allowing the PROG pin to float or connecting the
pin to an impedance greater than 200 k will disable
3.2 Battery Charge Control Output the MCP73113/4 charger. Refer to Section 5.5
(VBAT) “Constant Current MODE – Fast Charge” for
details.
Connect to the positive terminal of the battery. Bypass
to VSS with a minimum of 1 µF to ensure loop stability 3.7 Exposed Pad (EP)
when the battery is disconnected.
The Exposed Thermal Pad (EP) should be connected
3.3 No Connect (NC) to the exposed copper area on the Printed Circuit
Board (PCB) to enhance thermal power dissipation.
No connect. Additional vias on the copper area under the
MCP73113/4 device will improve the performance of
3.4 Battery Management 0V Reference heat dissipation and simplify the assembly process.
(VSS)
Connect to the negative terminal of the battery and
input supply.

3.5 Status Output (STAT)


STAT is an open-drain logic output for connection to an
LED for charge status indication in stand-alone
applications. Alternatively, a pull-up resistor can be
applied for interfacing to a host microcontroller. Refer to
Table 5-2 for a summary of the status output during a
charge cycle.

 2009-2013 Microchip Technology Inc. DS20002183E-page 13


MCP73113/4
NOTES:

DS20002183E-page 14  2009-2013 Microchip Technology Inc.


MCP73113/4
4.0 DEVICE OVERVIEW
The MCP73113/4 are simple, but fully integrated linear charge management controllers. Figure 4-1 depicts the
operational flow algorithm.

SHUTDOWN MODE
VDD < VUVLO
VDD < VPD
or
PROG > 200 k
STAT = high Z

VBAT < VPTH

VDD < VOVP TIMER FAULT


PRECONDITIONING MODE Timer Expired No Charge Current
Charge Current = IPREG
STAT = Flashing (Type 2)
STAT = LOW
STAT = high Z (Type 1)
Timer Reset Timer Suspended
Timer Enable

VDD > VOVP


VDD > VOVP VBAT > VPTH
VBAT > VPTH

FAST CHARGE MODE


OVERVOLTAGE PROTECTION Charge Current = IREG Timer Expired
No Charge Current
STAT = LOW
STAT = high Z TIMER FAULT
Timer Reset VBAT < VRTH
Timer Suspended No Charge Current
Timer Enabled
STAT = Flashing (Type 2)
STAT = high Z (Type 1)
Timer Suspended
VDD > VOVP VDD < VOVP VBAT = VREG

VDD < VOVP


CONSTANT VOLTAGE MODE
Charge Voltage = VREG
STAT = LOW

VBAT < ITERM

Die Temperature < TSDHYS


Charge Mode Resume CHARGE COMPLETE MODE VBAT > VSHORT
No Charge Current Charge Mode Resume
STAT = high Z
Timer Reset

Die Temperature > TSD


VBAT < VSHORT

TEMPERATURE FAULT
No Charge Current BATTERY SHORT PROTECTION
STAT = Flashing (Type 2) Charge Current = ISHORT
STAT = high Z (Type 1) STAT = Flashing (Type 2)
Timer Suspended STAT = high Z (Type 1)
Timer Suspended

FIGURE 4-1: The MCP73113/4 Flowchart.

 2009-2013 Microchip Technology Inc. DS20002183E-page 15


MCP73113/4
NOTES:

DS20002183E-page 16  2009-2013 Microchip Technology Inc.


MCP73113/4
5.0 DETAILED DESCRIPTION 5.3.2 BATTERY CHARGE CONTROL
OUTPUT (VBAT)
5.1 Undervoltage Lockout (UVLO) The battery charge control output is the drain terminal
of an internal P-channel MOSFET. The MCP73113/4
An internal undervoltage lockout (UVLO) circuit
devices provide constant current and voltage
monitors the input voltage and keeps the charger in
regulation to the battery pack by controlling this
Shutdown mode until the input supply rises above the
MOSFET in the linear region. The battery charge
UVLO threshold. In the event a battery is present when
control output should be connected to the positive
the input power is applied, the input supply must rise
terminal of the battery pack.
approximately 150 mV above the battery voltage
before the MCP73113/4 device becomes operational. 5.3.3 BATTERY DETECTION
The UVLO circuit places the device in Shutdown mode The MCP73113/4 detects the battery presence by
if the input supply falls to approximately 150 mV above monitoring the voltage at VBAT. The charge flow will ini-
the battery voltage.The UVLO circuit is always active. tiate when the voltage on VBAT is below the VRECHARGE
At any time, the input supply is below the UVLO threshold. Refer to Section 1.0 “Electrical Character-
threshold or approximately 150 mV of the voltage at the istics” for VRECHARGE values. The value will be the
VBAT pin, the MCP73113/4 device is placed in a same for the non-rechargeable device.
Shutdown mode.
When VBAT > VREG + hysteresis, the charge will be
suspended or not started, depending on the current
5.2 Overvoltage Protection (OVP)
charge status, to prevent overcharging.
An internal overvoltage protection (OVP) circuit
monitors the input voltage and keeps the charger in 5.4 Preconditioning
Shutdown mode when the input supply rises above the
OVP threshold. The hysteresis of OVP is If the voltage at the VBAT pin is less than the
approximately 150 mV for the MCP73113/4 device. preconditioning threshold, the MCP73113/4 device
enters a Preconditioning mode. The preconditioning
The MCP73113/4 device is operational between UVLO threshold is factory set. Refer to Section 1.0
and OVP threshold. The OVP circuit is also recognized “Electrical Characteristics” for preconditioning
as overvoltage lockout (OVLO). threshold options.
In this mode, the MCP73113/4 device supplies 10% of
5.3 Charge Qualification
the fast charge current (established with the value of
When the input power is applied, the input supply must the resistor connected to the PROG pin) to the battery.
rise 150 mV above the battery voltage before the When the voltage at the VBAT pin rises above the pre-
MCP73113/4 becomes operational. conditioning threshold, the MCP73113/4 device enters
The automatic power-down circuit places the device in the constant current (Fast Charge) mode.
a Shutdown mode if the input supply falls to within
Note: The MCP73113/4 also offer options with
+50 mV of the battery voltage.
no preconditioning.
The automatic circuit is always active. At any time the
input supply is within +50 mV of the voltage at the 5.4.1 TIMER EXPIRED DURING
VBAT pin, the MCP73113/4 is placed in a Shutdown PRECONDITIONING MODE
mode.
If the internal timer expires before the voltage threshold
For a charge cycle to begin, the automatic power- is reached for Fast Charge mode, a timer fault is
down conditions must be met and the charge enable indicated and the charge cycle terminates. The
input must be above the input high threshold. MCP73113/4 device remains in this condition until the
battery is removed or input power is cycled. If the
5.3.1 BATTERY MANAGEMENT INPUT battery is removed, the MCP73113/4 device enters the
SUPPLY (VDD) Standby mode where it remains until a battery is
The VDD input is the input supply to the MCP73113/4. reinserted.
The MCP73113/4 automatically enters a Power-Down
Note: The typical preconditioning timer for
mode if the voltage on the VDD input falls to within
MCP73113/4 is 32 minutes. The
+50 mV of the battery voltage. This feature prevents
MCP73113/4 also offer options with no
draining the battery pack when the VDD supply is not
preconditioning timer.
present.

 2009-2013 Microchip Technology Inc. DS20002183E-page 17


MCP73113/4
5.5 Constant Current MODE – Fast Constant-Current mode is maintained until the voltage
Charge at the VBAT pin reaches the regulation voltage, VREG.
When Constant-Current mode is invoked, the internal
During the Constant-Current mode, the programmed timer is reset.
charge current is supplied to the battery or load.
The charge current is established using a single 5.5.1 TIMER EXPIRED DURING
resistor from PROG to VSS. The program resistor and CONSTANT CURRENT – FAST
the charge current are calculated using the following CHARGE MODE
equations: If the internal timer expires before the recharge voltage
threshold is reached, a timer fault is indicated and the
EQUATION 5-1: charge cycle terminates. The MCP73113/4 device
I REG = 1104  R
– 0.93 remains in this condition until the battery is removed. If
the battery is removed or input power is cycled, the
Where: MCP73113/4 device enters the Standby mode where it
remains until a battery is reinserted.
RPROG = kilo-ohms (k)
IREG = milliampere (mA)
5.6 Constant-Voltage Mode
EQUATION 5-2: When the voltage at the VBAT pin reaches the
regulation voltage, VREG, constant voltage regulation
(log(IREG)/(-0.93))log begins. The regulation voltage is factory set to 4.10V,
RPROG = 10^
1104 4.20V, 4.35V or 4.40V with a tolerance of ±0.5%.
Where:
RPROG = kilo-ohms (k) 5.7 Charge Termination
IREG = milliampere (mA) The charge cycle is terminated when, during Constant-
Voltage mode, the average charge current diminishes
Table 5-1 provides commonly seen E96 (1%) and E24 below a threshold established with the value of 5%,
(5%) resistors for various charge current to reduce 7.5%, 10% or 20% of fast charge current or internal
design time. timer has expired. A 1 ms filter time on the termination
comparator ensures that transient load conditions do
TABLE 5-1: RESISTOR LOOK-UP TABLE not result in premature charge cycle termination. The
timer period is factory set and can be disabled. Refer to
Charge Recommended Recommended Section 1.0, "Electrical Characteristics" for timer
Current (mA) E96 Resistor () E24 Resistor () period options.
130 10k 10k
150 8.45k 8.20k 5.8 Automatic Recharge
200 6.20k 6.20k The MCP73113/4 device continuously monitors the
250 4.99k 5.10k voltage at the VBAT pin in the Charge Complete mode.
300 4.02k 3.90k If the voltage drops below the recharge threshold,
350 3.40k 3.30k another charge cycle begins and current is once again
supplied to the battery or load. The recharge threshold
400 3.00k 3.00k
is factory set. Refer to Section 1.0, "Electrical
450 2.61k 2.70k Characteristics" for recharge threshold options.
500 2.32k 2.37k
Note: The MCP73113/4 also offer options with
550 2.10k 2.20k
no automatic recharge.
600 1.91k 2.00k
650 1.78k 1.80k For the MCP73113/4 devices with no recharge option,
the MCP73113/4 will go into Standby mode when a
700 1.62k 1.60k
termination condition is met. The charge will not restart
750 1.50k 1.50k until at least one of the following conditions have been
800 1.40k 1.50k met:
850 1.33k 1.30k • Battery is removed from the system and inserted
900 1.24k 1.20k again
950 1.18k 1.20k • VDD is removed and plugged in again
1000 1.10k 1.10k • RPROG is disconnected (or high-impedance) and
1100 1.00k 1.00k reconnected

DS20002183E-page 18  2009-2013 Microchip Technology Inc.


MCP73113/4
5.9 Thermal Regulation TABLE 5-2: STATUS OUTPUTS
The MCP73113/4 shall limit the charge current based CHARGE CYCLE STATE STAT
on the die temperature. The thermal regulation Shutdown high Z
optimizes the charge cycle time while maintaining Standby high Z
device reliability. Figure 5-1 depicts the thermal Preconditioning L
regulation for the MCP73113/4 device. Refer to
Constant Current Fast L
Section 1.0 “Electrical Characteristics” for thermal
Charge
package resistances and Section 6.1.1.2 “Thermal
Considerations” for calculating power dissipation. Constant Voltage L
.
Charge Complete - Standby high Z
Temperature Fault 1.6 second 50% D.C.
600
Flashing (Type2)
500 high Z (Type 1)
Charge Current (mA)

Timer Fault 1.6 second 50% D.C.


400
Flashing (Type 2)
300
high Z (Type 1)
Preconditioning Timer Fault 1.6 second 50% D.C.
200 Flashing (Type 2)
VDD = 5.2V high Z (Type 1)
100
RPROG = 2 kΩ

0 5.12 Battery Short Circuit Protection


25 35 45 55 65 75 85 95 105 115 125 135 145
Junction Temperature (°C)
When a single-cell Li-Ion battery is detected, an inter-
nal battery short circuit protection (BSP) circuit starts
FIGURE 5-1: Charge Current (IOUT) vs.
monitoring the battery voltage. When VBAT is below the
Junction Temperature (TJ). typical 1.7V battery short circuit protection threshold
voltage, the charging behavior is postponed. A 25 mA
5.10 Thermal Shutdown
(typical) detection current is supplied for recovering
The MCP73113/4 suspends the charge if the die from the battery short circuit condition.
temperature exceeds +150°C. Charging will resume Preconditioning mode resumes when VBAT raises
when the die temperature has cooled by above the battery short circuit protection threshold. The
approximately 10°C. The thermal shutdown is a battery voltage must rise approximately 150 mV above
secondary safety feature in the event that there is a the battery short circuit protection voltage before the
failure within the thermal regulation circuitry. MCP73113/4 device becomes operational.

5.11 Status Indicator


The charge status outputs are open-drain outputs with
two different states: Low (L), and High-Impedance
(high-Z). The charge status outputs can be used to
illuminate LEDs. Optionally, the charge status outputs
can be used as an interface to a host microcontroller.
Table 5-2 summarizes the state of the status outputs
during a charge cycle.

 2009-2013 Microchip Technology Inc. DS20002183E-page 19


MCP73113/4
NOTES:

DS20002183E-page 20  2009-2013 Microchip Technology Inc.


MCP73113/4
6.0 APPLICATIONS Figure 6-1 depicts a typical stand-alone application
circuit, while Figure 6-2 depicts the accompanying
The MCP73113/4 devices are designed to operate charge profile.
with a host microcontroller or in stand-alone applica-
tions. The MCP73113/4 provides the preferred charge
algorithm for Lithium-Ion and Lithium-Polymer cells
Constant-current followed by Constant-voltage.

MCP73113/4 Typical Application


1 3
AC-DC Adapter VDD VBAT
2 VBAT 4 COUT
VDD +
CIN
RLED
7 10 1-Cell
STAT PROG
Li-Ion
5 NC Battery
VSS 9 RPROG

6 NC 8
VSS

FIGURE 6-1: Typical Application Circuit.


6.1.1 COMPONENT SELECTION
5.0 1
4.5 0.9 Selection of the external components in Figure 6-1 is
4.0 0.8 crucial to the integrity and reliability of the charging
Battery Voltage (V)

Supply Current (A)

3.5 0.7 system. The following discussion is intended as a guide


3.0 0.6 for the component selection process.
2.5 0.5
2.0 0.4 6.1.1.1 Charge Current
1.5 0.3 The preferred fast charge current for Li-Ion/Li-Poly cells
1.0 0.2 is below the 1C rate, with an absolute maximum current
RPROG = 2 K
0.5 875 mAh Battery 0.1 at the 2C rate. The recommended fast charge
0.0 0 current should be obtained from the battery
0 15 30 45 60 75 90 105 120
manufacturer. For example, a 500 mAh battery pack
Time (Minutes)
with 0.7C preferred fast charge current has a charge
FIGURE 6-2: Typical Charge Profile current of 350 mA. Charging at this rate provides the
(875 mAh Battery). shortest charge cycle times without degradation to the
battery pack performance or life.
6.1 Application Circuit Design Note: Please consult with your battery supplier
or refer to the battery data sheet for
Due to the low efficiency of linear charging, the most preferred charge rate.
important factors are thermal design and cost, which
are a direct function of the input voltage, output current
and thermal impedance between the battery charger
and the ambient cooling air. The worst-case situation is
when the device has transitioned from the
Preconditioning mode to the Constant-Current mode.
In this situation, the battery charger has to dissipate the
maximum power. A trade-off must be made between
the charge current, cost and thermal requirements of
the charger.

 2009-2013 Microchip Technology Inc. DS20002183E-page 21


MCP73113/4
6.1.1.2 Thermal Considerations A minimum of 1 µF, is recommended for both the output
capacitor and the input capacitor for typical applica-
The worst-case power dissipation in the battery
tions.
charger occurs when the input voltage is at the
maximum and the device has transitioned from the
Preconditioning mode to the Constant-Current mode. TABLE 6-1: MLCC CAPACITOR EXAMPLE
In this case, the power dissipation is: MLCC Temperature
Tolerance
Capacitors Range
PowerDissipation =  V –V I
DDMAX PTHMIN REGMAX X7R -55C to +125C ±15%
Where: X5R -55C to +85C ±15%
VDDMAX = the maximum input voltage
Virtually any good quality output filter capacitor can be
IREGMAX = the maximum fast charge current
used, independent of the capacitor’s minimum
VPTHMIN = the minimum transition threshold Effective Series Resistance (ESR) value. The actual
voltage value of the capacitor (and its associated ESR)
depends on the output load current. A 1 µF ceramic,
Power dissipation with a 5V, ±10% input voltage tantalum or aluminum electrolytic capacitor at the
source, 500 mA ±10% and preconditioning threshold output is usually sufficient to ensure stability.
voltage at 2.7V is:
6.1.1.4 Reverse-Blocking Protection
EQUATION 6-1: The MCP73113/4 provide protection from a faulted or
shorted input. Without the protection, a faulted or
PowerDissipation =  5.5V – 2.7V   550mA = 1.54W
shorted input would discharge the battery pack through
the body diode of the internal pass transistor.
This power dissipation with the battery charger in the
DFN-10 package will result approximately 63C above
room temperature.

6.1.1.3 External Capacitors


The MCP73113/4 are stable with or without a battery
load. In order to maintain good AC stability in the
Constant-Voltage mode, a minimum capacitance of
1 µF is recommended to bypass the VBAT pin to VSS.
This capacitance provides compensation when there is
no battery load. In addition, the battery and
interconnections appear inductive at high frequencies.
These elements are in the control feedback loop during
Constant-Voltage mode. Therefore, the bypass
capacitance may be necessary to compensate for the
inductive nature of the battery pack.

DS20002183E-page 22  2009-2013 Microchip Technology Inc.


MCP73113/4
6.2 PCB Layout Issues
For optimum voltage regulation, place the battery pack
as close as possible to the device’s VBAT and VSS pins,
recommended to minimize voltage drops along the
high current-carrying PCB traces.
If the PCB layout is used as a heat sink, adding many
vias in the heat sink pad can help conduct more heat to
the backplane of the PCB, thus reducing the maximum
junction temperature. Figure 6-4 and Figure 6-5 depict
a typical layout with PCB heat sinking.

FIGURE 6-5: Typical Layout (Bottom).

FIGURE 6-3: Typical Layout (Top).

FIGURE 6-4: Typical Layout (Top Metal).

 2009-2013 Microchip Technology Inc. DS20002183E-page 23


MCP73113/4
NOTES:

DS20002183E-page 24  2009-2013 Microchip Technology Inc.


MCP73113/4
7.0 PACKAGING INFORMATION

7.1 Package Marking Information

10-Lead DFN (3x3) Example:

Standard *
XXXX 93HI
Part Number Code
YYWW 1229
MCP73113-06SI/MF 93HI
NNN 256
MCP73113-16SI/MF 83HI
MCP73114-0NSI/MF 9MHI

Legend: XX...X Customer-specific information


Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
e3 Pb-free JEDEC designator for Matte Tin (Sn)
* This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.

Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.

 2009-2013 Microchip Technology Inc. DS20002183E-page 25


MCP73113/4

Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging

DS20002183E-page 26  2009-2013 Microchip Technology Inc.


MCP73113/4

Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging

 2009-2013 Microchip Technology Inc. DS20002183E-page 27


MCP73113/4

Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging

DS20002183E-page 28  2009-2013 Microchip Technology Inc.


MCP73113/4
APPENDIX A: REVISION HISTORY

Revision E (November 2013)


The following is the list of modifications:
1. Updated the Functional Block Diagram.
2. Updated FIGURE 4-1: “The MCP73113/4
Flowchart.”
3. Minor typographical edits.

Revision D (February 2013)


The following is the list of modifications:
1. Updated the Functional Block Diagram.
2. Updated the DC Characteristics table.
3. Updated the Temperature Specifications table.
4. Updated Section 3.6 “Current Regulation Set
(PROG)”.
5. Updated Section 3.7 “Exposed Pad (EP)”.
6. Updated Section 5.3.3 “Battery Detection”.
7. Updated Equation 5-2.
8. Updated Section 5.12 “Battery Short Circuit
Protection”.
9. Updated Section 6.1.1.3 “External Capaci-
tors”.

Revision C (January 2010)


The following is the list of modifications:
1. DC Characteristics table: Removed the
minimum and maximum values for the BSP Start
Threshold parameter.

Revision B (July 2009)


The following is the list of modifications:
1. Added MCP73114 device throughout the
document.
2. Updated specifications for the MCP73113/4
device family throughout the document.
3. Updated package marking information.
4. Updated the Product Identification System
page.

Revision A (May 2009)


• Original Release of this Document.

 2009-2013 Microchip Technology Inc. DS20002183E-page 29


MCP73113/4
NOTES:

DS20002183E-page 30  2009-2013 Microchip Technology Inc.


MCP73113/4
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO. X XX Examples:


a) MCP73113-06SI/MF: Single-Cell Li-Ion/Li-Polymer
Device Temperature Package Battery device
Range b) MCP73113-16SI/MF: Single-Cell Li-Ion/Li-Polymer
Battery device
c) MCP73113T-06SI-MF: Tape and Reel,
Device: MCP73113: Single-Cell Li-Ion/Li-Polymer Battery device Single-Cell Li-Ion/Li-Polymer
MCP73113T: Single-Cell Li-Ion/Li-Polymer Battery device, Battery device
Tape and Reel d) MCP73113T-16SI/MF: Tape and Reel,
MCP73114: Single-Cell Li-Ion/Li-Polymer Battery device Single-Cell Li-Ion/Li-Polymer
MCP73114T: Single-Cell Li-Ion/Li-Polymer Battery device, Battery device
Tape and Reel
a) MCP73114-0NSI/MF: Single-Cell Li-Ion/Li-Polymer
Battery device
Temperature I = -40C to +85C (Industrial) b) MCP73114T-0NSI/MF: Tape and Reel,
Range: Single-Cell Li-Ion/Li-Polymer
Battery device
Package: MF = Plastic Dual Flat No Lead, 3x3 mm Body (DFN),
10-Lead

 2009-2013 Microchip Technology Inc. DS20002183E-page 31


MCP73113/4
NOTES:

DS20002183E-page 32  2009-2013 Microchip Technology Inc.


Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device Trademarks


applications and the like is provided only for your convenience The Microchip name and logo, the Microchip logo, dsPIC,
and may be superseded by updates. It is your responsibility to
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
ensure that your application meets with your specifications.
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
MICROCHIP MAKES NO REPRESENTATIONS OR and UNI/O are registered trademarks of Microchip Technology
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
Incorporated in the U.S.A. and other countries.
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION, FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
INCLUDING BUT NOT LIMITED TO ITS CONDITION, MTP, SEEVAL and The Embedded Control Solutions
QUALITY, PERFORMANCE, MERCHANTABILITY OR Company are registered trademarks of Microchip Technology
FITNESS FOR PURPOSE. Microchip disclaims all liability Incorporated in the U.S.A.
arising from this information and its use. Use of Microchip Silicon Storage Technology is a registered trademark of
devices in life support and/or safety applications is entirely at Microchip Technology Inc. in other countries.
the buyer’s risk, and the buyer agrees to defend, indemnify and
Analog-for-the-Digital Age, Application Maestro, BodyCom,
hold harmless Microchip from any and all damages, claims,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
suits, or expenses resulting from such use. No licenses are
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
conveyed, implicitly or otherwise, under any Microchip
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
intellectual property rights.
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2004-2013, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-62077--695-7

QUALITY MANAGEMENT SYSTEM Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
CERTIFIED BY DNV Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures

== ISO/TS 16949 ==
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.

 2004-2013 Microchip Technology Inc. DS20002183E-page 33


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Detroit China - Shanghai
Novi, MI
Tel: 65-6334-8870 UK - Wokingham
Tel: 86-21-5407-5533 Fax: 65-6334-8850 Tel: 44-118-921-5800
Tel: 248-848-4000 Fax: 86-21-5407-5066
Taiwan - Hsin Chu Fax: 44-118-921-5820
Houston, TX
China - Shenyang Tel: 886-3-5778-366
Tel: 281-894-5983
Tel: 86-24-2334-2829 Fax: 886-3-5770-955
Indianapolis Fax: 86-24-2334-2393
Noblesville, IN Taiwan - Kaohsiung
China - Shenzhen Tel: 886-7-213-7830
Tel: 317-773-8323
Tel: 86-755-8864-2200
Fax: 317-773-5453 Taiwan - Taipei
Fax: 86-755-8203-1760 Tel: 886-2-2508-8600
Los Angeles
China - Wuhan Fax: 886-2-2508-0102
Mission Viejo, CA
Tel: 86-27-5980-5300 Thailand - Bangkok
Tel: 949-462-9523
Fax: 86-27-5980-5118 Tel: 66-2-694-1351
Fax: 949-462-9608
China - Xian Fax: 66-2-694-1350
New York, NY
Tel: 631-435-6000 Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
San Jose, CA
Tel: 408-735-9110 China - Xiamen
Tel: 86-592-2388138
Canada - Toronto
Fax: 86-592-2388130
Tel: 905-673-0699
Fax: 905-673-6509 China - Zhuhai
Tel: 86-756-3210040
10/28/13
Fax: 86-756-3210049

DS20002183E-page 34  2009-2013 Microchip Technology Inc.

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