LIPTAI 30V45CT
Ultra Low VF=0.28V at IF=5A
■FEATURES ■PACKAGE
* Schottky Barrier Chip
* Guard Ring Die Construction for
Transient Protection
* Low Power Loss,High Effciency
* High Surge Capability
* High Current Capability and Low
Forward Voltage Drop
* For Use in Low Voltage,High Frequency
Inverters,Free Wheeling,and Polarity
Protection Applications
■ELECTRICAL CHARACTERISTICS (Tamb=25℃)
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM
Working Peak Reverse Voltage VRWM 45 V
DC Blocking Voltage VR
IF(per leg) 15
Average Rectifide Output Current A
IF(Total) 30
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions IFSM 350 A
halfwave,single phase,60HZ)
Instaneous Forward Voltage TYP.
@IF=5A,TC=25℃ 0.36
@IF=15A,TC=25℃ VF 0.46 V
@IF=5A,TC=125℃ 0.28
@IF=15A,TC=125℃ 0.42
Peak Reverse Current @Tc=25 ℃ 0.3
IR mA
at Rated DC Blocking Voltage @Tc=125℃ 100
Operating and Storage Temperature Range TJ, TSTG -65 to +150 ℃
TO-220 2
θJC
TO-220F 4
Maximum Thermal Resistance ℃/W
TO-220 60
θJA
TO-220F 60
30V45CT SICHUAN LIPTAI ELECTRONIC CO.,LTD
LIPTAI 30V45CT
■ Characteristics Curves
Typical Forward Voltage Per Diode Typical Reverse Current Per Diode
Average Forward Forward Current vs.
Case Temperature Per Diode
30V45CT
30V45CT SICHUAN LIPTAI
SICHUAN LIPTAI ELECTRONIC
ELECTRONIC CO.,LTD
CO.,LTD
LIPTAI 30V45CT
■ Reflow Soldering Temperature Profile
30V45CT SICHUAN LIPTAI ELECTRONIC CO.,LTD
LIPTAI 30V45CT
TO-220 MECHANICAL DATA
UNIT:mm
SYMBOL MIN NOM MAX SYMBOL MIN NOM MAX
A 4 4.8 e 2.44 2.54 2.64
B 1.2 1.4 F 1.1 1.4
B1 1 1.4 L 12.5 14.5
b1 0.75 0.95 L1 3 3.5 4
c 0.4 0.55 ΦP 3.7 3.8 3.9
D 15 16.5 Q 2.5 3
D1 5.9 6.9 Q1 2 2.9
E 9.9 10.7
30V45CT SICHUAN LIPTAI ELECTRONIC CO.,LTD
LIPTAI 30V45CT
TO-220F MECHANICAL DATA
UNIT:mm
SYMBOL MIN NOM MAX SYMBOL MIN NOM MAX
A 4.5 4.9 E1 6.5 7 7.5
A1 2.3 2.9 e 2.44 2.54 2.64
b 0.65 0.9 L 12.5 14.3
b1 1.1 1.7 L1 9.45 10.05
b2 1.2 1.4 L2 15 16
c 0.35 0.65 L3 3.2 4.4
D 14.5 16.5 ΦP 3 3.3
D1 6.1 6.9 Q 2.5 2.9
E 9.6 10.3
30V45CT SICHUAN LIPTAI ELECTRONIC CO.,LTD