2N7002DW

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features Mechanical Data

• Dual N-Channel MOSFET • Case: SOT-363
• Low On-Resistance • Case Material: Molded Plastic. “Green” Molding Compound.
• Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0
• Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020
• Fast Switching Speed • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
• Low Input/Output Leakage (Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Ultra-Small Surface Mount Package • Terminal Connections: See Diagram
• Lead Free/RoHS Compliant (Note 2) • Marking Information: See Page 3
• Qualified to AEC-Q101 Standards for High Reliability • Ordering Information: See Page 3
• "Green" Device (Note 3 and 4) • Weight: 0.006 grams (approximate)

SOT-363

D2 G1 S1

S2 G2 D1

TOP VIEW TOP VIEW

Internal Schematic

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS ≤ 1.0MΩ VDGR 60 V
Gate-Source Voltage Continuous ±20
VGSS V
Pulsed ±40
Drain Current (Note 1) Continuous 115
Continuous @ 100°C ID 73 mA
Pulsed 800

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units

Total Power Dissipation 200 mW
PD
Derating above TA = 25°C (Note 1) 1.60 mW/°C
Thermal Resistance, Junction to Ambient RθJA 625 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at [Link]
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at [Link]
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

2N7002DW 1 of 4 August 2010

Document number: DS30120 Rev. 12 - 2 [Link] © Diodes Incorporated
 2N7002DW

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS 60 70 ⎯ V VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current @ TC = 25°C 1.0
IDSS ⎯ ⎯ µA VDS = 60V, VGS = 0V
@ TC = 125°C 500
Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(th) 1.0 ⎯ 2.0 V VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance @ TJ = 25°C 3.2 7.5 VGS = 5.0V, ID = 0.05A
RDS (ON) ⎯ Ω
@ TJ = 125°C 4.4 13.5 VGS = 10V, ID = 0.5A
On-State Drain Current ID(ON) 0.5 1.0 ⎯ A VGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 ⎯ ⎯ mS VDS = 10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ 22 50 pF
Output Capacitance Coss ⎯ 11 25 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss ⎯ 2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ⎯ 7.0 20 ns VDD = 30V, ID = 0.2A, RL = 150Ω,
Turn-Off Delay Time tD(OFF) ⎯ 11 20 ns VGEN = 10V, RGEN = 25Ω
Notes: 5. Short duration pulse test used to minimize self-heating effect.

1.0 7

6
ID, DRAIN-SOURCE CURRENT (A)

0.8 DRAIN-SOURCE ON-RESISTANCE

5
RDS(ON), NORMALIZED

0.6
4

3
0.4

2
0.2
1

0 0
0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Fig. 1 On-Region Characteristics Fig. 2 On-Resistance vs. Drain Current

2.0 6
DRAIN-SOURCE ON-RESISTANCE

DRAIN-SOURCE ON-RESISTANCE

5
1.5
RDS(ON), NORMALIZED

RDS(ON), NORMALIZED

1.0 3

2
0.5

0 0
-55 -30 -5 20 45 70 95 120 145 0 2 4 6 8 10 12 14 16 18
Tj, JUNCTION TEMPERATURE (°C) VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 3 On-Resistance vs. Junction Temperature Fig. 4 On-Resistance vs. Gate-Source Voltage

2N7002DW 2 of 4 August 2010

Document number: DS30120 Rev. 12 - 2 [Link] © Diodes Incorporated
 2N7002DW

Ordering Information (Note 6)

Part Number Case Packaging
2N7002DW-7-F SOT-363 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at [Link]

Marking Information

K72 = Product Type Marking Code

K72 YM YM = Date Code Marking
YM K72 Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)

Date Code Key

Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D

Package Outline Dimensions

A
SOT-363
Dim Min Max
B C A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Typ
F 0.40 0.45
H
H 1.80 2.20
K J 0 0.10
M
K 0.90 1.00
L 0.25 0.40
J M 0.10 0.22
D F L
α 0° 8°
All Dimensions in mm

Suggested Pad Layout

C2 C2

Dimensions Value (in mm)

Z 2.5
G 1.3
G C1 X 0.42
Z
Y 0.6
C1 1.9
Y
C2 0.65
X

2N7002DW 3 of 4 August 2010

Document number: DS30120 Rev. 12 - 2 [Link] © Diodes Incorporated
 2N7002DW

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

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1. are intended to implant into the body, or

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labeling can be reasonably expected to result in significant injury to the user.

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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2010, Diodes Incorporated

[Link]

2N7002DW 4 of 4 August 2010

Document number: DS30120 Rev. 12 - 2 [Link] © Diodes Incorporated