Scribd
Upload
88 views4 pages

Electronics Lab Report

The document reports on a lab experiment investigating the characteristics of a silicon diode. It describes the objective to study forward and reverse biasing, the apparatus used which includes a power supply and circuit board, and the procedure of connecting the diode and adjusting the voltage to record current measurements. The results show that current starts to flow at 0.6V in forward bias as the threshold voltage, and no current flows in reverse bias due to the depletion layer. The conclusion is that the experiment determined the silicon diode threshold voltage is 0.6V.

Uploaded by

acme bomb
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
88 views4 pages

Electronics Lab Report

The document reports on a lab experiment investigating the characteristics of a silicon diode. It describes the objective to study forward and reverse biasing, the apparatus used which includes a power supply and circuit board, and the procedure of connecting the diode and adjusting the voltage to record current measurements. The results show that current starts to flow at 0.6V in forward bias as the threshold voltage, and no current flows in reverse bias due to the depletion layer. The conclusion is that the experiment determined the silicon diode threshold voltage is 0.6V.

Uploaded by

acme bomb
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
You are on page 1/ 4

ELECTRONICS BCT 2205

PROTUS SANG’
CIT-222-045/2019
LAB REPORT 1
Objective: Investigating the characteristics of a silicon diode
Introduction
Forward biasing has the effect of reducing or removing the depletion layer for conduction. The
silicon diode has a threshold voltage of 0.7V & the diode should not conduct when it is reverse
biased.
Apparatus
Variable resistor, power supply, circuit board, potentiometer, connecting wires, short circuit
clippers.
Procedure
i. Place the circuit board on top of the d.c. power supply.
ii. Insert the short-circuit clip & connect both the ammeter & the voltmeter.
iii. Connect the 12V to the input terminals, adjust the variable resistor to transmit voltage
to the two terminals of the diode. View the change in forward current & record the
results on a table for the forward biasing.
iv. Connect the 12V to the input terminals, adjust the variable resistor to transmit voltage
to the two terminals of the diode. View the change in the reverse current & record the
results on a table for the reverse biasing.
Data Analysis
From 0.1 to 0.5, there’s no current flowing in the diode.
As from 0.6, current starts to flow.
Data 1

V.F 0.1 0.2 0.3 0.4 0.5 0.6 0.7


I.F 0.000 0.000 0.001 0.000 0.000 0.001 0.006

Data 2

V.R 0.1 0.2 0.3 0.4 0.5


V.I 0.000 0.000 0.000 0.000 0.000
Conclusion

From this experiment, we can deduce that the silicon diode has a potential barrier whose threshold
voltage is 0.6V.
When the reverse current is applied, the silicon diode can’t conduct because of increase in the depletion
layer.

Procedure

i. Place the circuit board on top of the d.c. power supply.


ii. Insert the short-circuit clip & connect both the ammeter & the voltmeter.
iii. Connect the 12V to the input terminals, adjust the variable resistor to transmit voltage
to the two terminals of the diode. View the change in forward current & record the
results on a table for the forward biasing.
iv. Connect the 12V to the input terminals, adjust the variable resistor to transmit voltage
to the two terminals of the diode. View the change in the reverse current & record the
results on a table for the reverse biasing.
Data Analysis

From the table, current changes concurrently.

The reverse current is constant.

Data 1

V.F 0.1 0.2 0.3 0.4 0.5 0.6 0.7


V.I 0.000 0.000 0.001 0.001 0.001 0.002 0.002

Data 2

V.R 0.1 0.2 0.3 0.4 0.5 0.6 0.7


I.R 0.000 0.000 0.000 0.000 0.000 0.000 0.000

Conclusion

From this experiment, we can deduce that the germanium diode has a potential barrier whose threshold
voltage is 0.2V.

When the reverse current is applied, the germanium diode can’t conduct because of increase in the
depletion layer.

Sources of error

 Resistance of the connecting wires


 Accuracy of recorded values may not be accurate
 Faulty apparatus
 Faulty circuit connection

Reference
Physics manual book

You might also like