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Assignment 1

The document outlines an assignment focused on deriving the analytical expression for electron concentration in semiconductors using the Boltzmann approximation. It includes tasks such as expressing electron concentration in terms of effective density of states and evaluating its value for silicon at different temperatures. Additionally, it discusses the characteristics of the effective density of states and its relation to the energy of free electrons near the conduction band edge.

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EC21B1004 ANANYA LAKSHMI RAVI
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53 views1 page

Assignment 1

The document outlines an assignment focused on deriving the analytical expression for electron concentration in semiconductors using the Boltzmann approximation. It includes tasks such as expressing electron concentration in terms of effective density of states and evaluating its value for silicon at different temperatures. Additionally, it discusses the characteristics of the effective density of states and its relation to the energy of free electrons near the conduction band edge.

Uploaded by

EC21B1004 ANANYA LAKSHMI RAVI
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

ASSIGNMENT-1

1.(a)Solve the following integral (using Boltzmann approximation) to obtain the analytical
expression for electron concentration in a semiconductor sample:

where f ( E ) is the Fermi distribution function and the density of states in the
conduction band,g ( E ), is given as

with m e as the effective mass of electron, h as the Planck’s constant and E C as the
bottom of the conduction band.

1.(b)Show that the electron concentration can be expressed as n = N C f(E C ) with


Boltzmann approximated distribution function. Here N C is the effective density of states
in the conduction band located at E = E C . Express n in terms of N C , E C , E F and kT.

1.(c)For silicon, N C = 2.8 × 10 19 /cm 3 at room temperature (300 K). What is its value at 600
K?Can we assume N C to be almost temperature independent?

1.(d)Show that the effective density of states (N C ) represents the density of states in a
strip only 1.2 kT wide near the edge of the conduction band. Can we assume that the
energy of a free electron is always very close to E C ?

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