Formulas: ✓ Decibel Calculations

▪ Voltage Gain or Attenuation

✓ Wavelength:
dB = 20 log Vout/ Vin
Wavelength (λ) = speed of light ÷ frequency
▪ Current Gain or Attenuation
Speed of light = 𝟑  𝟏𝟎 meters/second
𝟖
dB = 20 log Iout/ Iin
Therefore:
▪ Power Gain or Attenuation
λ = 𝟑  𝟏𝟎𝟖 /𝒇
dB = 10 log Pout/ Pin
✓ Frequency
f=1/T
✓ Capacitive Reactance
XC= 1/2fC
✓ Noise Power:
PN = kTB
✓ Inductive Reactance
XL= 2fL
where:
PN = noise power (W)
✓ Resonant Frequency
k=Boltzmann’s Constant (1.38 x 10-23 (J/K))
T = absolute temperature (K) fr=1/2√𝑳𝑪
B = noise power bandwidth (Hz)

✓ Noise Voltage ✓ RC Notch Filter

VN = √𝟒𝒌𝑻𝑩𝑹 fnotch= 1/2RC

✓ Noise Current ✓ Vm  Vc
IN = √𝟐𝒒𝑰𝑶 𝑩
✓ Modulation Index
where:
q= magnitude of the charge on an electron (1.6 x m = Vm/Vc
-19 𝑽𝒎𝒂𝒙 −𝑽𝒎𝒊𝒏
10 C) m=
𝑽𝒎𝒂𝒙 +𝑽𝒎𝒊𝒏
IO = dc bias current (A)
𝑰𝑵 𝟐
IO = ✓ Percentage of Modulation
𝟐𝒒𝑩
𝑽 −𝑽
B = bandwidth over which the noise id observed (Hz) m=𝑽𝒎𝒂𝒙 +𝑽𝒎𝒊𝒏  𝟏𝟎𝟎
𝒎𝒂𝒙 𝒎𝒊𝒏

✓ Signal-to-Noise Ratio
𝑷 ✓ Peak value of the carrier
𝑺⁄𝑵 (𝒅𝑩) = 𝟏𝟎 𝐥𝐨𝐠 𝑺 𝑽𝒎𝒂𝒙 +𝑽𝒎𝒊𝒏
𝑷𝑵 Vc =
𝑽 𝟐
𝑺⁄𝑵 (𝒅𝑩) = 𝟐𝟎 𝐥𝐨𝐠 𝑽 𝑺
𝑵
✓ Peak value of the modulating signal
𝑽𝒎𝒂𝒙 −𝑽𝒎𝒊𝒏
✓ Noise factor Vm =
𝑺 𝟐
( )
𝑵 𝒊
𝑵𝑭 = 𝑺
( )
𝑵 𝒐 ✓ Sidebands
➢ Upper sideband (fUSB)
𝑺 𝑺
𝑵𝑭(𝒅𝑩) = ( ) (𝒅𝑩) − ( ) (𝒅𝑩)
𝑵 𝒊 𝑵 𝒐
fUSB = fc + fm

➢ Lower sideband (fLSB)

✓ Noise Temperature: fLSB = fc - fm
Teq= 𝟐𝟗𝟎(𝑵𝑭 − 𝟏)
✓ Bandwidth
✓ Gain BW = fUSB - fLSB
Av= output/input
✓ Transmitted Power
PT = (IT)2R
✓ Power Gain 𝟐
PT = PC (𝟏 + )
𝟐
Power gain (Ap) = Pout / Pin
✓ Carrier Power
✓ Attenuation 𝑷𝒕
A = output/input = Vout/Vin PC = 𝟐
(𝟏+ )
o Total attenuation 𝟐

PC = (IT)2R
AT= A1  A2  A3
Vout= ATVin
✓ Sideband Power
𝑷𝒄 𝟐
Ps= 𝟐
Sample Problem: