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TC4421
TC4422

9A HIGH-SPEED MOSFET DRIVERS

FEATURES GENERAL DESCRIPTION

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■ Tough CMOS™ Construction The TC4421/4422 are high current buffer/drivers
■ High Peak Output Current .................................. 9A capable of driving large MOSFETs and IGBTs.
■ High Continuous Output Current ............... 2A Max They are essentially immune to any form of upset
■ Fast Rise and Fall Times: except direct overvoltage or over-dissipation — they can-
— 30 nsec with 4,700 pF Load not be latched under any conditions within their power and

■
■
— 180 nsec with 47,000 pF Load
Short Internal Delays ............................ 30nsec Typ
Low Output Impedance ............................ 1.4W Typ
voltage ratings; they are not subject to damage or improper
operation when up to 5V of ground bounce is present on
their ground terminals; they can accept, without either
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damage or logic upset, more than 1A inductive current of
APPLICATIONS either polarity being forced back into their outputs. In addi-
tion, all terminals are fully protected against up to 4 kV of
■ Line Drivers for Extra-Heavily-Loaded Lines electrostatic discharge.
■ Pulse Generators The TC4421/4422 inputs may be driven directly from
■
■
■
Driving the Largest MOSFETs and IGBTs
Local Power ON/OFF Switch
Motor and Solenoid Driver
either TTL or CMOS (3V to 18V). In addition, 300 mV of
hysteresis is built into the input, providing noise immunity
and allowing the device to be driven from slowly rising or
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PIN CONFIGURATIONS falling waveforms.

5-Pin TO-220 8-Pin Plastic DIP/CerDIP ORDERING INFORMATION

VDD 1 8 VDD Part No. Package Temperature Range

TC4421
TC4422
INPUT 2

NC 3
TC4421
TC4422
7 OUTPUT

6 OUTPUT
TC4421CAT
TC4421CPA
5-Pin TO-220
8-Pin PDIP
0°C to +70°C
0°C to +70°C 5
GND 4 5 GND TC4421EPA 8-Pin PDIP – 40°C to +85°C
Tab is TC4421MJA 8-Pin CerDIP – 55°C to+125°C
Common
to VDD TC4422CAT 5-Pin TO-220 0°C to +70°C
INPUT
GND

GND
OUTPUT
VDD

TC4422CPA 8-Pin PDIP 0°C to +70°C

NOTE: Duplicate pins must both be connected
TC4422EPA 8-Pin PDIP – 40°C to +85°C
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for proper operation.
NC = No connection TC4422MJA 8-Pin CerDIP – 55°C to+125°C
FUNCTIONAL BLOCK DIAGRAM
V DD
INVERTING

300 mV
OUTPUT

7
NONINVERTING
INPUT

4.7V
TC4421/TC4422
Inverting/Noninverting
GND
EFFECTIVE
INPUT C
25 pF
TC4421/2-7 -1018/96
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 9A HIGH-SPEED MOSFET DRIVERS

TC4421
TC4422

ABSOLUTE MAXIMUM RATINGS* Operating Temperature (Ambient)

C Version ............................................... 0°C to +70°C
Power Dissipation, TA ≤ 70°C E Version .......................................... – 40°C to +85°C
PDIP ..................................................................730W M Version ....................................... – 55°C to +125°C
CerDIP ............................................................800mW Lead Temperature (10 sec) ..................................... 300°C
5-Pin TO-220 ......................................................1.6W Supply Voltage ............................................................20V
Power Dissipation, TA ≤ 70°C Input Voltage .......................... (VDD + 0.3V) to (GND - 5V)
5-Pin TO-220 (With Heat Sink) .........................1.60W Input Current (VIN > VDD) ........................................ 50 mA
Derating Factors (To Ambient)
PDIP ............................................................. 8mW/°C *Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
CerDIP ....................................................... 6.4mW/°C above those listed under "Absolute Maximum Ratings" may cause perma-
5-Pin TO-220 .............................................. 12mW/°C nent damage to the device. These are stress ratings only and functional
Thermal Impedance (To Case) operation of the device at these or any other conditions above those
5-Pin TO-220 RQJ-C ..................................................... 10°C/W indicated in the operation sections of the specifications is not implied.
Storage Temperature ............................ – 65°C to +150°C Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
Operating Temperature (Chip) ................................ 150°C

ELECTRICAL CHARACTERISTICS: TA = 25°C with 4.5V ≤ VDD ≤ 18V unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Input
VIH Logic 1 Input Voltage 2.4 1.8 — V
VIL Logic 0 Input Voltage — 1.3 0.8 V
IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA
Output
VOH High Output Voltage See Figure 1 VDD – 0.025 — — V
VOL Low Output Voltage See Figure 1 — — 0.025 V
RO Output Resistance, High VDD = 18V, IO = 10 mA — 1.4 — Ω
RO Output Resistance, Low VDD = 18V, IO = 10 mA — 0.9 1.7 Ω
IPK Peak Output Current VDD = 18V — 9 — A
IDC Continuous Output Current 10V ≤ VDD ≤ 18V, TC = 25° 2 A
(TC4421/22 CAT only)
IREV Latch-Up Protection Duty Cycle ≤ 2% >1500 — — mA
Withstand Reverse Current t ≤ 300 µsec
Switching Time (Note 1)
tR Rise Time Figure 1, CL = 10,000 pF — 60 75 nsec
tF Fall Time Figure 1, CL = 10,000 pF — 60 75 nsec
tD1 Delay Time Figure 1 — 30 60 nsec
tD2 Delay Time Figure 1 — 33 60 nsec
Power Supply
IS Power Supply Current VIN = 3V — 0.2 1.5 mA
VIN = 0V — 55 150 µA
VDD Operating Input Voltage 4.5 — 18 V
Input
VIH Logic 1 Input Voltage 2.4 — — V
VIL Logic 0 Input Voltage — — 0.8 V
IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA

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9A HIGH-SPEED MOSFET DRIVERS
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TC4421
TC4422

ELECTRICAL CHARACTERISTICS (cont.):

Measured over operating temperature range with 4.5V ≤ VS ≤ 18V unless otherwise specified.

Symbol Parameter Test Conditions Min Typ Max Unit

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Input
VIH Logic 1 Input Voltage 2.4 — — V
VIL Logic 0 Input Voltage — — 0.8 V
IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA
Output
VOH
VOL
High Output Voltage
Low Output Voltage
See Figure 1
See Figure 1
VDD – 0.025
—
—
—
—
0.025
V
V
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RO Output Resistance, High VDD = 18V, IO = 10 mA — 2.4 3.6 W
RO Output Resistance, Low VDD = 18V, IO = 10 mA — 1.8 2.7 W
Switching Time (Note 1)
tR Rise Time Figure 1, CL = 10,000 pF — 60 120 nsec
tF
tD1
Fall Time
Delay Time
Figure 1, CL = 10,000 pF
Figure 1
—
—
60
50
120
80
nsec
nsec 4
tD2 Delay Time Figure 1 — 65 80 nsec
Power Supply
IS Power Supply Current VIN = 3V — 0.45 3 mA
VIN = 0V — 0.06 0.2
VDD Operating Input Voltage 4.5 — 18 V
NOTE: 1. Switching times guaranteed by design.
5
VDD = 18V

0.1 µF

1 8
+5V

INPUT
90%
6
0.1 µF 0.1 µF
0V 10%
t D1 tF t D2
tR
2 6 +18V
INPUT OUTPUT 90% 90%
7 OUTPUT
C L = 10,000 pF 10% 10%
TC4421 0V

4 5
7
INPUT: 100 kHz, square wave,
tRISE = tFALL ≤ 10nsec

Figure 1. Switching Time Test Circuit

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TELCOM SEMICONDUCTOR, INC. 4-233
 9A HIGH SPEED MOSFET DRIVERS

TC4421
TC4422

TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage Fall Time vs. Supply Voltage
220 180
200 160
180
22,000 pF 140

tFALL (nsec)
160 22,000 pF
tRISE (nsec)

120
140
120 100
10,000 pF
100 80
80 10,000 pF
4700 pF 60
60 4700 pF
40
40
1000 pF 20
20
1000 pF
0 0
4 6 8 10 12 14 16 18 4 6 8 10 12 14 16 18
V VDD
DD

Rise TIme vs. Capacitive Load Fall TIme vs. Capacitive Load
300 300

5V 5V
250 250
10V 10V
tFALL (nsec)
tRISE (nsec)

200 200

150 150
15V 15V
100 100

50 50

0 0
100 1000 10,000 100,000 100 1000 10,000 100,000
CLOAD (pF) CLOAD (pF)

Rise and Fall Times vs. Temperature Propagation Delay vs. Supply Voltage
90 50
CLOAD = 10,000 pF C LOAD = 1000 pF
80 VDD = 15V
45

70
TIME (nsec)

TIME (nsec)

40
60
t RISE
35 tD2
50
tD1
40 t FALL 30

30 25
–40 0 40 80 120 4 6 8 10 12 14 16 18
TA (°C) VDD

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9A HIGH SPEED MOSFET DRIVERS
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TC4421
TC4422

TYPICAL CHARACTERISTICS (Cont.)

Supply Current vs. Capacitive Load
(VDD = 18V)
Supply Current vs. Frequency
(VDD = 18V) 2
220 180
47,000 pF 22,000 pF
200 160
180 2 MHz
140
160 10,000 pF
120

ISUPPLY (mA)
ISUPPLY (mA)

140
120 1.125 MHz 63.2 kHz 100

100
80
632 kHz
80
60
0.1 µF
3
60
40 4700 pF
40 20 kHz
200 kHz 20
20 470 pF
0 0
100 1000 10,000 100,000 10 100 1000
CLOAD (pF) FREQUENCY (kHz)

Supply Current vs. Capacitive Load, Supply Current vs. Frequency

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(VDD = 12) (VDD = 12)
180 180
22,000 pF
160 160
10,000 pF
140 140
47,000 pF
120 120
ISUPPLY (mA)

ISUPPLY (mA)

100

80
2 MHz

63.2 kHz
100

80
5
1.125 MHz
60 60 4700 pF
0.1 µF
40 632 kHz 40
20 kHz
20 200 kHz 20
470 pF
0 0

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100 1000 10,000 100,000 10 100 1000
CLOAD (pF) FREQUENCY (kHz)

Supply Current vs. Capacitive Load Supply Current vs. Frequency

(VDD = 6V) (VDD = 6V)
100 120
200 kHz 47,000 pF
90
100
80 22,000 pF
70
80
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ISUPPLY (mA)

10,000 pF
ISUPPLY (mA)

60
4700 pF
50 60
40 63.2 kHz
2 MHz 40
30
632 kHz 0.1 µF
20
20 kHz 20
10
470 pF

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0 0
100 1000 10,000 100,000 10 100 1000
CLOAD (pF) FREQUENCY (kHz)

TELCOM SEMICONDUCTOR, INC. 4-235

 9A HIGH SPEED MOSFET DRIVERS

TC4421
TC4422

TYPICAL CHARACTERISTICS (Cont.)

Propagation Delay vs. Input Amplitude Propagation Delay vs. Temperature

120 50
110 VDD = 10V
100 CLOAD = 10000V 45
90
80 40

TIME (nsec)
TIME (nsec)

70
60 35
50 tD2 tD2 tD1
40 30
30 tD1
20 25
10
0 20
1 2 3 4 5 6 7 8 9 10 –60 –40 –20 0 20 40 60 80 100 120
INPUT (V) TA (°C)

Crossover Energy vs. Supply Voltage Quiescent Supply Current vs. Temperature
–6 103
10
VDD= 18V
IQUIESCENT (µA)
A•sec

–7 INPUT = 1
10

102

INPUT = 0

–8
10
4 6 8 10 12 14 16 18
–60 –40 –20 0 20 40 60 80 100 120
V
DD T (°C)
NOTE: The values on this graph represent the loss seen
by the driver during a complete cycle. For the loss J
in a single transition, divide the stated value by 2.

High-State Output Resistance Low-State Output Resistance

vs. Supply Voltage vs. Supply Voltage
6 6
5.5 5.5
5 5
4.5 4.5
TJ = 150° C
RDS(ON) ( Ω)

RDS(ON) ( Ω)

4 4
3.5 3.5
3 3 TJ = 150°C
2.5 2.5
2 2
TJ = 25° C
1.5 1.5
1 1 TJ = 25°C
0.5 0.5
4 6 8 10 12 14 16 18 4 6 8 10 12 14 16 18
VDD (V) VDD (V)

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