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EUVL Workshop Keynote - ASML

The document summarizes developments in high-NA EUV lithography technology. It discusses that ASML and ZEISS are ramping up efforts to develop a 0.55 NA EUV system to extend Moore's Law for another decade. It provides updates on the status of the high-NA development, including that mirror manufacturing is ongoing and the first mirrors have reached specifications, module integration is progressing at ASML, and the Imec-ASML joint lab is being prepared to receive the first high-NA system for customer work while subsequent tools are manufactured.

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211 views1 page

EUVL Workshop Keynote - ASML

The document summarizes developments in high-NA EUV lithography technology. It discusses that ASML and ZEISS are ramping up efforts to develop a 0.55 NA EUV system to extend Moore's Law for another decade. It provides updates on the status of the high-NA development, including that mirror manufacturing is ongoing and the first mirrors have reached specifications, module integration is progressing at ASML, and the Imec-ASML joint lab is being prepared to receive the first high-NA system for customer work while subsequent tools are manufactured.

Uploaded by

Gary Ryan Donovan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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2022 EUVL Workshop & Supplier Showcase June 4 – 9, 2022

High-NA EUV: Getting Closer to Industry Introduction


(Keynote)

Jan van Schoot

ASML Netherlands B.V. (The Netherlands)


De Run 6501, 5504 DR Veldhoven, The Netherlands

At this moment EUV systems equipped with a 0.33 Numerical Aperture (NA) have
proven themselves and are successfully applied in high volume manufacturing. At
the same time, ASML and ZEISS are in parallel ramping up their activities
considerably on an EUV exposure tool with an NA of 0.55.
The purpose of this so-called high-NA scanner, targeting an ultimate resolution of
8nm, is to extend Moore’s law for at least another decade.
A novel lens design, capable of providing the required Numerical Aperture, has
been identified; this so called anamorphic lens will provide 8nm resolution in all
orientations. Paired with new, faster stages and more accurate sensors providing
the tight focus and overlay control needed it enables future nodes.
In this paper, a short overview of the current state of the 0.33NA technology will
be given, after that the advantages of High-NA will be outlined.
Next to this, an update will be given on the status of the developments at ZEISS
and ASML. Mirror manufacturing is in full swing, and the first mirrors that have
reached their final specification are produced. Integration of the main modules at
ASML is ongoing. At the same time the planned Imec-ASML joint lab is being
readied to receive the first complete High-NA system. In this lab, customers can
start working on High-NA, while the subsequent tools are manufactured and
shipped
Presenting Author

Jan B.P. van Schoot, PhD, is Director of System Engineering and


Technical Specialist at ASML, based in Veldhoven, The
Netherlands. After his study Electrical Engineering (Cum Laude)
at Twente University of Technology. He received his PhD in
Physics on the subject of non-linear optical waveguide devices in
1994 and held a post-doc position studying waveguide based
electro-optical modulators. He joined ASML in 1996 and was
Project Leader for the Application of the first 5500/500 scanner
and its successors up to 5500/750. In 2001 he became Product
Development Manager of Imaging Products (DoseMapper,
Customized Illumination). In 2007 he joined the dept of System
Engineering. He was responsible for the Optical Columns of the
0.25NA and 0.33NA EUV systems. After this he worked on the
design of the EUV source. He was the study leader of the High-
NA EUV system and is now responsible for the HighNA optical
train. He is a Sr. Member of the SPIE, holds over 35 patents and
presents frequently at conferences about photolithography

www.euvlitho.com

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