DMP2040USS

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary Features and Benefits

ID Max  Low On-Resistance
BVDSS RDS(ON) Max
TA = +25°C  Low Gate Threshold Voltage
33mΩ @ VGS = -4.5V -7.0A  Low Input Capacitance
-20V
 Fast Switching Speed
PRODUCT

52mΩ @ VGS = -2.5V -5.5A

INFORMATION

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)

Description and Applications Mechanical Data

ADVANCED NEW

This MOSFET is designed to minimize the on-state resistance  Case: SO-8

(RDS(ON)) and yet maintain superior switching performance, making  Case Material: Molded Plastic, “Green” Molding Compound.
it ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0
 Backlighting  Moisture Sensitivity: Level 1 per J-STD-020
 Power Management Functions  Terminals Connections: See Diagram
 DC-DC Converters  Terminals: Finish - Matte Tin Annealed over Copper Lead
Frame. Solderable per MIL-STD-202, Method 208
 Weight: 0.072g (Approximate)

S D D
SO-8

S D

S D G

G D S

Top View Top View Equivalent Circuit

Pin-Out

Ordering Information (Note 4)

Part Number P Case Packaging
DMP2040USS-13 SO-8 2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

8 5

= Manufacturer’s Marking
P2040US
P3007LS P2040US = Product Type Marking Code
YYWW = Date Code Marking
YY WW YY or YY= Year (ex: 19 = 2019)
WW = Week (01 to 53)
1 4

DMP2040USS 1 of 7 September 2019

Document number: DS40054 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMP2040USS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS ±12 V
Steady TA = +25°C -7.0
Continuous Drain Current (Note 6) VGS = -4.5V ID A
State TA = +70°C -5.5
PRODUCT
INFORMATION

Steady TC = +25°C -15

Continuous Drain Current (Note 7) VGS = -4.5V ID A
State TC = +70°C -12
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) IDM -30 A
Continuous Source-Drain Diode Current (Note 6) IS -2.2 A
Avalanche Current (Note 8) L = 0.1mH IAS -16 A
Avalanche Energy (Note 8) L = 0.1mH EAS 13.5 mJ
ADVANCED NEW

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) TA = +25°C PD 1.4 W
Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 91 °C/W
Total Power Dissipation (Note 6) TA = +25°C PD 1.9 W
Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 64 °C/W
Thermal Resistance, Junction to Case (Note 7) Steady State RθJC 13.5 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics (TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage BVDSS -20 — — V VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current IDSS — — -1 µA VDS = -16V, VGS = 0V
Gate-Source Leakage IGSS — — 100 nA VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage VGS(TH) -0.6 — -1.5 V VDS = VGS, ID = -250µA
— 26 33 VGS = -4.5V, ID = -8.9A
Static Drain-Source On-Resistance RDS(ON) mΩ
— 37.5 52 VGS = -2.5V, ID = -6.9A
Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, IS = -2.9A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance Ciss — 834 —
VDS = -10V, VGS = 0V,
Output Capacitance Coss — 133 — pF
f = 1.0MHz
Reverse Transfer Capacitance Crss — 105 —
Gate Resistance Rg — 4.9 — Ω VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V) Qg — 8.6 —
Total Gate Charge (VGS = -8V) Qg — 19 —
nC VDS = -6V, ID = -8.9A
Gate-Source Charge Qgs — 1.5 —
Gate-Drain Charge Qgd — 2.5 —
Turn-On Delay Time tD(ON) — 5.8 —
Turn-On Rise Time tR — 7.7 — VDD = -6V, RL = 6Ω
ns
Turn-Off Delay Time tD(OFF) — 28.1 — VGS = -4.5V, Rg = 6Ω, ID = -1A
Turn-Off Fall Time tF — 14.6 —
Body Diode Reverse Recovery Time tRR — 9.8 — ns IF = -8.9A, di/dt = -100A/μs
Body Diode Reverse Recovery Charge QRR — 2.7 — nC IF = -8.9A, di/dt = -100A/μs
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.

DMP2040USS 2 of 7 September 2019

Document number: DS40054 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMP2040USS
20.0 20
VGS = -2.5V VDS = -5V
18.0
VGS = -3.0V
16.0 VGS = -4.5V

ID, DRAIN CURRENT (A)

15
ID, DRAIN CURRENT (A)

14.0 VGS = -6.0V

VGS = -10.0V
12.0 VGS=-2.0V
10
PRODUCT

10.0
INFORMATION

8.0
VGS = -1.8V TJ=125℃
6.0
5
TJ=150℃ TJ=85℃
4.0
VGS = -1.5V TJ=25℃
2.0
VGS = -1.3V TJ=-55℃
ADVANCED NEW

0.0 0
0 1 2 3 4 5 0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic

0.06 0.5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

0.45 ID = -8.9A
0.05
0.4

VGS =-2.5V 0.35

0.04
0.3
(W)

(W)

0.03 0.25 ID = -6.9A

0.2
0.02 VGS =-4.5V
0.15

0.1
0.01
0.05

0 0
0 4 8 12 16 20 0 2 4 6 8 10
ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and Figure 4. Typical Transfer Characteristic
Gate Voltage
RDS(ON), DRAIN-SOURCE ON-RESISTANCE

0.04 1.8
RDS(ON), DRAIN-SOURCE ON-RESISTANCE

VGS = -4.5V TJ=150℃

1.6
0.035
TJ=125℃ VGS = -4.5V, ID = -8.9A
1.4
(NORMALIZED)

0.03 TJ=85℃
(W)

1.2
0.025 TJ=25℃
1
VGS = -2.5V, ID = -6.9A
0.02
TJ=-55℃ 0.8

0.015 0.6
0 5 10 15 20 -50 -25 0 25 50 75 100 125 150
ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)
Figure 5. Typical On-Resistance vs. Drain Current and Figure 6. On-Resistance Variation with Junction
Junction Temperature Temperature

DMP2040USS 3 of 7 September 2019

Document number: DS40054 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMP2040USS

VGS(TH), GATE THRESHOLD VOLTAGE (V)

0.06 1.2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE

0.05 VGS = -2.5V, ID = -6.9A 1

ID = -1mA

0.04 0.8
(W)

ID = -250μA
PRODUCT
INFORMATION

0.03 0.6

VGS = -4.5V, ID = -8.9A

0.02 0.4

0.01 0.2
ADVANCED NEW

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction Figure 8. Gate Threshold Variation vs. Junction
Temperature Temperature

20 10000
f=1MHz
VGS = 0V

CT, JUNCTION CAPACITANCE (pF)

IS, SOURCE CURRENT (A)

15
Ciss
1000

10
Coss
TJ = 85℃
100
TJ = 125℃ Crss
5 TJ = 25℃
TJ = 150℃
TJ = -55℃

0 10
0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20
VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance

8 100
RDS(ON) Limited
7 PW =100µs

10
ID, DRAIN CURRENT (A)

5
VGS (V)

4 1 PW =1ms
PW =10ms
3 VDS = -6V, ID = -8.9A PW =100ms
PW =1s
2 0.1
TJ(Max) = 150℃ TC = 25℃ PW
Single Pulse =10s
1 DUT on 1*MRP Board DC
VGS= -4.5V
0 0.01
0 2 4 6 8 10 12 14 16 0.1 1 10 100
Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area

DMP2040USS 4 of 7 September 2019

Document number: DS40054 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMP2040USS

1
D=0.7
D=0.5
r(t), TRANSIENT THERMAL RESISTANCE D=0.3
D=0.9
0.1
D=0.1
PRODUCT
INFORMATION

D=0.05

D=0.02
D=0.01
0.01
D=0.005
ADVANCED NEW

RθJA(t) = r(t) * RθJA

RθJA = 94℃/W
D=Single Pulse
Duty Cycle, D = t1 / t2
0.001
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance

DMP2040USS 5 of 7 September 2019

Document number: DS40054 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMP2040USS

Package Outline Dimensions

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SO-8
PRODUCT
INFORMATION

SO-8
Dim Min Max Typ.
E
A 1.40 1.50 1.45
A1 0.10 0.20 0.15
1 b 0.30 0.50 0.40
c 0.15 0.25 0.20
ADVANCED NEW

D 4.85 4.95 4.90

E 5.90 6.10 6.00
b E1 3.80 3.90 3.85
E1 E0 3.85 3.95 3.90
h
es)
e -- -- 1.27
Q
A ll sid h -- -- 0.35
9° ( 7° 45° L 0.62 0.82 0.72
c
Q 0.60 0.70 0.65
A 4° ± 3°
All Dimensions in mm
Gauge Plane
Seating Plane
1
0. A1
L
R e E0
D

Suggested Pad Layout

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SO-8
X1

Dimensions Value (in mm)

C 1.27
Y1 X 0.802
X1 4.612
Y 1.505
Y1 6.50

C X

DMP2040USS 6 of 7 September 2019

Document number: DS40054 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMP2040USS

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PRODUCT
INFORMATION

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ADVANCED NEW

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Copyright © 2019, Diodes Incorporated

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DMP2040USS 7 of 7 September 2019

Document number: DS40054 Rev. 4 - 2 www.diodes.com © Diodes Incorporated