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3-Phase Brushless DC Motor Driver IC

This document summarizes a 3-phase full-wave brushless DC motor driver IC called the TA8493F/AF/BF. It contains 3 discrete power transistors in a multi-chip structure to facilitate heat dispersion. It uses direct PWM control and supports 120 or 180 degree drive systems depending on the model. It has features like current limiting, reversing/brake functions, hall signal inputs, and thermal shutdown protection.

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0% found this document useful (0 votes)
230 views25 pages

3-Phase Brushless DC Motor Driver IC

This document summarizes a 3-phase full-wave brushless DC motor driver IC called the TA8493F/AF/BF. It contains 3 discrete power transistors in a multi-chip structure to facilitate heat dispersion. It uses direct PWM control and supports 120 or 180 degree drive systems depending on the model. It has features like current limiting, reversing/brake functions, hall signal inputs, and thermal shutdown protection.

Uploaded by

John
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

TA8493F/AF/BF

Toshiba Bipolar Linear Integrated Circuit Multi-Chip

TA8493F, TA8493AF, TA8493BF


3-Phase Full Wave Brushless DC Motor Driver IC for CD-ROM Drives

These 3-phase, full-wave, brushless DC motor driver ICs have


been developed for use in CD-ROM drive spindle motors. The
TA8493F/ AF/ BF contain in its upper stage a discrete power
transistor (P-ch-MOS) and uses direct PWM control system,
which enables the IC to provide superior thermal efficiency.
Furthermore, the multi-chip structure of this device facilitates
dispersion of the heat generated inside the package, making it
possible to suppress heat concentration.

Features
· Multi-chip structure (3 × 2SJ465 chips built-in)
Weight: 0.63 g (typ.)
· Direct PWM control system
· Drive system: 120°drive system (TA8493F/BF)
: 180°drive system (TA8493AF)
· Built-in current limiter: ILIM = 0.7 A (typ.) (at RF = 0.33 Ω)
· Built-in reversing brake/short brake functions
· FG signal output (using hall element output signal)
· Built-in hall bias
· Built-in thermal shutdown circuit
· Package: MFP-30

1 2002-01-31
TA8493F/AF/BF
Block Diagram

VCC
5V
La (G) Lb (G) Lc (G)
20 VCC 2 1 27
15 VM1
+ 29 12 V
Ha
14
- 4
Ha

Amplifier
13 VM2

Matrix
+
Hb
12
- 3
Hb
16 La
+ 30
Hc Lb
- 17
Hc 28
Lc
Detection

TSD
Reverse

RF1
6
RF2
25
GND

FGO 10
18
HB
CRF
8
PWM Signal
VC 21
Vref 22

F/F
OSC
Stand by 5 SB
Mode Select Short Brake

MS 26 OSC 23 BRK 11 24 7 19 Cd
GND1 GND2

2SJ465 ´ 3

9 pin: N.C.

2 2002-01-31
TA8493F/AF/BF
PIN Assignment
Terminal Terminal
No. Symbol Function Remarks

b-phase upper side power transistor (base)


1 Lb (G) Keep open.
output terminal
a-phase upper side power transistor (base)
2 La (G) Keep open.
output terminal
3 La a-phase output terminal Connect to the coil.
4 VM2 Supply voltage terminal for motor drive Connect to VM1 externally.
5 SB RUN/STOP control terminal H: RUN, L: STOP
Sets limiter current value.
6 RF1 Output current detection terminal Connect to RF2 externally and between this
terminal and GND.
7 GND2 GND ¾
Connect a capacitor between this terminal
8 CRF Output current filter terminal
and GND.
9 N.C.
Outputs a signal whose frequency is
10 FGO FG amplifier output terminal
determined by the CD rotation frequency.
11 BRK Brake mode select terminal Output mode when VC > Vref
-
12 Hb b-phase negative hall signal input terminal Connect to hall element output terminal.
+
13 Hb b-phase positive hall signal input terminal Connect to hall element output terminal.
-
14 Ha a-phase negative hall signal input terminal Connect to hall element output terminal.
+
15 Ha a-phase positive hall signal input terminal Connect to hall element output terminal.
+
16 Hc c-phase positive hall signal input terminal Connect to hall element output terminal.
-
17 Hc a-phase negative hall signal input terminal Connect to hall element output terminal.
Open collector output. Connect to the
18 HB Hall element bias terminal
negative side of hall element bias line.
Forward/reverse changeover gain
19 Cd Adjust a rotation direction changeover gain
adjustment terminal
20 VCC Supply voltage terminal for control circuits VCC (opr) = 4.5 to 5.5 V
21 VC Control amplifier input terminal Use the control signal as input.
Control amplifier reference voltage input Use the reference voltage for the control
22 Vref
terminal amplifier as input.
Connect a capacitor between this terminal
23 OSC Triangular wave oscillation terminal
and GND.
24 GND1 GND ¾
Sets limiter current value.
25 RF2 Output current detection terminal Connect to RF1 externally and between this
terminal and GND.
26 MS Mode select terminal Determines output mode.
c-phase upper side power transistor (base)
27 Lc (G) Keep open.
output terminal
28 Lc c-phase output terminal Connect to the coil.
29 VM1 Supply voltage terminal for motor drive Connect to VM2 externally.
30 Lb b-phase output terminal Connect to the coil.

3 2002-01-31
TA8493F/AF/BF
Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

VCC 7
Power Supply Voltage V
VM 16

Output Current IO 1.5 A

PD
Power Dissipation 1.0 W
(Note1)

Junction Temperature Tj 150 °C

Operating Temperature Topr -20 to 75 °C

Storage Temperature Tstg -55 to 150 °C

Note1: unmounted

Operating Voltage Range


Operating
Characteristics Symbol Unit
Range
VCC 4.5 to 5.5
Power Supply Voltage V
VM 10 to 14

Electrical Characteristics (VCC = 5 V, VM = 12 V, Ta = 25°C)


Test
Characteristics Symbol Test Condition Min Typ. Max Unit
Circuit
ICC1 Stop mode ¾ 0.3 0.8
Supply Voltage 1 mA
ICC2 Run mode, output open ¾ 7 15
Input Current IINH VCMRH = 2.5 V, (sink current) ¾ ¾ 2 mA
Common Mode
Hall Amp. Input Voltage VCMRH 2 ¾ 1.5 ¾ 4.0 V
Range
Input Amplitude VH ¾ 100 ¾ ¾ mVp-p
Hall Element Bias Saturation Voltage VHB 2 IHB = 10 mA ¾ 1.3 2.0 V
Common Mode
Input Voltage VCMRC ¾ 0.5 ¾ 4.0 V
Range 2
VC = Vref = 1.65 V,
Input Current IINC ¾ ¾ 5.0 mA
(source current)

Control Amp. Dead Zone Vref = 1.65 V, RF = 0.33 W


VDZ ¾ ¾ 100 ¾
Voltage Width (Note2)
CW mode, Vref = 1.65 V, mV
DVOFF (F) 20 50 150
Input Offset RF = 0.33 W
2
Voltage CCW mode, Vref = 1.65 V,
DVOFF (R) 20 50 150
RF = 0.33 W

Current Limit ILIM ¾ RF = 0.33 W (Note2) ¾ 700 ¾ mA


Limit Current
Amp. VLIM 3 ¾ 0.25 0.3 0.35 V
Input Voltage (H) VINS (H) (RUN) 3.0 ¾ VCC
RUN/STOP V
Input Voltage (L) VINS (L) 1 (STOP) GND ¾ 1.0
Control Circuit
Input Current IINS (L) VINS = GND, (source current) ¾ ¾ 1 mA

Note2: this is not tested.

4 2002-01-31
TA8493F/AF/BF
Test
Characteristics Symbol Test Condition Min Typ. Max Unit
Circuit
Output
Resistance RON (U) IO = 0.6 A ¾ 0.5 1.0 W
(upper side)
4
Saturation
Voltage VSAT (L) IO = 0.6 A ¾ 0.4 0.8 V
Output Circuit (lower side)
Cut-off Current
IL (U) VL = 16 V ¾ ¾ 10
(upper side)
5 mA
Cut-off Current
IL (L) VL = 16 V ¾ ¾ 10
(lower side)
CCW mode
Input Voltage (H) VMS (H) 3.0 ¾ VCC
VC > Vref, BRK: L
Mode Select V
6 Reversing brake mode
Circuit Input Voltage (L) VMS (L) ¾ ¾ 0.5
VC > Vref, BRK: L
Input Current IINMS VMS = GND, (source current) ¾ ¾ 1 mA
Hysteresis
VHYS 8 ¾ 5 20 45 mVp-p
Voltage
Output Voltage VCC
FG Amp. VOFG (H) Source current: 10 mA ¾ ¾
(H) - 0.5
7 V
Output Voltage
VOFG (L) Sink current: 10 mA ¾ ¾ 0.5
(L)
Input Voltage (H) VBRK (H) ¾ 3.0 ¾ VCC
Short Brake V
Input Voltage (L) VBRK (L) 6 ¾ ¾ ¾ 0.5
Circuit
Input Current IINBRK VBRK = GND, (source current) ¾ ¾ 1 mA
Triangular Oscillation
fOSC ¾ C = 560 pF (Note2) ¾ 39 ¾ kHz
Oscillation Circuit Frequency
Junction temperature
Thermal Shut-down Operating
TSD ¾ (according to design ¾ 175 ¾ °C
Temperature
specification) (Note2)

Note2: this is not tested.

5 2002-01-31
TA8493F/AF/BF
Function Table
Forward Reverse
Ha Hb Hc La Lb Lc La Lb Lc
H L L H L M L H M
H H L H M L L M H
L H L M H L M L H
L H H L H M H L M
L L H L M H H M L
H L H M L H M H L

<Forward> <Reverse>
La = -(Hc - Ha) La = (Hc - Ha)
Lb = -(Ha - Hb) Lb = (Ha - Hb)
Lc = -(Hb - Hc) Lc = (Hb - Hc)

Timing Diagram
<Forward>

(TA8493F/BF)
Ha Hb Hc
+

Hall Signal

La
VM

Output Voltage

GND

Output Current

6 2002-01-31
TA8493F/AF/BF

(TA8493AF)
Ha Hb Hc
+

Hall Signal

La
VM

Output Voltage

GND

Output Current

7 2002-01-31
TA8493F/AF/BF
Functional Description
This IC is a 3-phase, full wave brushless DC motor driver of the direct PWM control type.
· Control amp input circuit

VCC

VC Vref

The common mode input voltage ranges for both VC and Vref are 0.5 to 4.0 V.
Relation between control input and PWM ON duty is shown below, PWM ON duty is 100%
when ïVref - VCï = 0.75 V (typ.)
The input is provided with a dead-zone area whose voltage width is 100 mV (typ.)
(%)

100
PWM on duty

Dead-zone
voltage width
100 mV (typ.)

0.5 Vref - 0.75 Vref Vref + 0.75

VC (V)

· Mode select/short brake circuit

MS BRK

8 2002-01-31
TA8493F/AF/BF
When VC > Vref, one of three modes (reverse rotation, reversing brake or short brake mode) can be selected by
setting the MS and BRK pins appropriately.

<Function>
VC < Vref VC > Vref

BRK BRK
H L H L
H Forward Forward Short
MS H Reverse
brake
L Forward Forward MS
Short Reversing
L
brake brake

In Short Brake mode, the upper-stage power transistor is turned on and the lower-stage power transistor
is turned off.

(short brake)

MS: H or L, BRK: H

VC

Vref

Forward mode Short Forward mode


Brake
mode

(reversing brake)
(1) When stopping the motor by applying a reversing brake after a short brake

MS: L

H
BRK
L

VC

Vref

Forward mode Short Reversing Stopped


Brake Brake
mode mode

9 2002-01-31
TA8493F/AF/BF
(2) When stopping the motor using reversing brake mode

MS: L, BRK: L

VC

Vref

Forward mode Reversing Stopped


Brake mode

Note3: For an explanation of the Reversing Brake mode stopping sequence, refer to the explanation of the
reverse rotation detection circuit.

The short brake generates less heat than the reversing brake. Therefore Toshiba recommends a
combined use of the short and reversing brakes when stopping the motor.

· Run/stop control circuit

SB

When the driver IC is standing by, all of its circuits except the FG amp and the hall amp are turned off.
H: start
L: standby

· Hall amp circuit

+ -
Ha Ha

The common mode input voltage range for VCMRH is 1.5 to 4.0 V.

10 2002-01-31
TA8493F/AF/BF
· Hall element bias circuit

HB

The hall element bias current is turned off when the driver IC is in standby state.
Make sure that the negative hall bias line is connected to the HB pin.
The remaining voltage is as follows:
VHB = 1.2 V (typ.) at IHB = 10 mA
Furthermore, this circuit cannot be used if FG output is necessary in standby state.
When the HB terminal is not used, the negative hall bias line must be connected to GND with a resistor in
between.

· FG amp circuit

FGO

This circuit uses a hall element signal which is output to FGO after a Schmitt stage.
The FG amp has a hysteresis of 20 mVp-p (typ.) and its output voltages are
High level: VCC - 0.5 to VCC [V]
Low level: GND to 0.5 V at IOFG = 10 mA
The FG amp is active when it is in standby state. When the hall element signal is input, the FG signal is
output.

11 2002-01-31
TA8493F/AF/BF
· Reverse rotation detection circuit
By comparing the two phases of the Hall element signal, this circuit detects a state where the phases are
inverted, at which time the torque is reduced to 0. The detection accuracy is determined by the number of pulses
per rotation of Hall element output.

Hall Element Signal


(phase b)

Hall Element Signal


(phase a)

Vref

VC

Direction of Rotation Forward rotation

(Note4)
Reverse
Stopped
rotation
Rotating Torque Forward torque

Reverse torque

Note4: Due to its inertial force, the motor does not stop immediately after the torque is reduced to 0.

12 2002-01-31
TA8493F/AF/BF
· Output circuit

*VCC/VM
* VCC : TA8493AF/BF
VM : TA8493F
La

La

RF
(upper stage)
(lower stage)

This circuit uses the system to chop the lower power transistors and resurrect coil current through upper
stage diodes.
The upper-stage power transistors consists of Pch-MOS transistors (2SJ465), which give high torque
efficiency.

VM

(coil current)

Lower Pw Tr.: ON
fPWM = 20 k to 50 kHz
Lower Pw Tr.: OFF
RF

VM
VLa

GND

Note: Lower-stage predrivers of TA8493AF/BF are supplied by VCC to reduce the power dissipation.

· Triangular wave oscillator circuit


Triangular waves are generated by connecting a capacitor between the OSC pin and GND.
This circuit is current output type, which makes PWM signal by comparing its output current with control
amp output current.
-
50 ´ 10 6 [A]
fOSC [Hz] =
(3.0 - 0.7) [V] ´ C [F]

3.0 V

0.7 V

Taking into account efficiency considerations and the effects of noise, Toshiba recommends using the IC with
an oscillation frequency of 20 kHz to 50 kHz.

13 2002-01-31
TA8493F/AF/BF
· Current limiter circuit
The current limit value is determined by the equation below.
0.3
~
ILIM - [A] (typ.)
RF + 0.1
This circuit cut off lower power transistors compulsorily when filtered VRF is more than reference voltage.
(0.3 V)
PWM signal cut off compulsorily is released from OFF state by next ON signal.

Over current detection term

Limiter Amp. Output

PWM Signal

(Note5)

Lower Pw Tr. ON OFF ON OFF OFF ON


ON

Note5: Keep “H” level in this term

Consider inside resistance (5 kW) when setting the capacitance value (CRF).

5 kW IM
Limiter amp circuit

CRF RF

· Thermal shut down circuit


The circuit turns off output when Tj = 175°C (typ.) (according to design specification)

14 2002-01-31
TA8493F/AF/BF
External Parts

Terminal No. Function Recommended Value Remarks

C1 Power supply line oscillation prevention 0.22 mF ¾


C2 Power supply line noise prevention 100 pF to 1000 pF (Note6)
C3 Power supply line noise prevention 10 mF to 33 mF (Note6)
C4 Filter 470 pF ¾
Forward/reverse changeover gain
C5 0.01 mF (Note7)
adjustment
C6 Triangular wave oscillation 470 pF to 1000 pF ¾
R1 Hall element bias ¾ (Note8)
R2 Control amp reference voltage ¾ (Note9)
R3 Output current detection 0.25 W to 0.5 W ¾

Note6: Absorb switching noise by C2 and C3.

Note7: This is used to adjust the rotation direction changeover gain.

This capacitance valve and the gain are in inverse.

This capacitance is to prevent from output through current.

Note8: Be sure to set this bias so that the hall element output amplitude and common mode input voltage fall within
the ranges specified in the table of electrical characteristic.

Note9: The voltage must be set to fall within the common mode input voltage range of the control amp.

15 2002-01-31
TA8493F/AF/BF
Test Circuit
1. ICC1, ICC2, VINS (H), VINS (L), IINS

RF1 1.65 V 1.65 V 5 V

0.22 mF

0.01 mF
560 pF
30 29 28 27 26 25 24 23 22 21 20 19 18 17 16
- +
Lb VM1 Lc Lc (G) MS RF2 GND1 OSC Vref VC VCC Cd HB Hc Hc

TA8493F/AF/BF

- + - +
Lb (G) La (G) La VM2 SB RF1 GND2 CRF N.C. FGO BRK Hb Hb Ha Ha
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
470 pF
0.33 W

VSB

· ICC1: VSB = 0.5 V


· ICC2: VSB = 3.0 V
· VINS (H), VINS (L): Judged by the gap between ICC1 and ICC2
· IINS: VINS = 0 V

16 2002-01-31
TA8493F/AF/BF
2. IINH, ICMRH, VHB, IINC, VCMRC

RF1 VCMRC 5V VHc

0.22 mF

0.01 mF
560 pF
A V A

30 29 28 27 26 25 24 23 22 21 20 19 18 17 16
- +
Lb VM1 Lc Lc (G) MS RF2 GND1 OSC Vref VC VCC Cd HB Hc Hc

TA8493F/AF/BF

- + - +
Lb (G) La (G) La VM2 SB RF1 GND2 CRF N.C. FGO BRK Hb Hb Ha Ha
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
470 pF
0.33 W

A A IINH

5V VHb VHa

· IINH: Total of a phase negative and positive input current.


VHa = VHb = VHc = 2.5 V
· VCMRH: Measure the IINH gap between VHa = 1.5 V and VHa = 4.0 V.
b and c phase are measured the same method.
· VHB: IHB = 10 mA
· VINC: Total of VC and Vref input current. At VCMRC = 1.65 V.
· VCMRC: Measure the IINC gap between VCMRC = 0.5 V and VCMRC = 4.0 V.

17 2002-01-31
TA8493F/AF/BF
3. DVOFF (F), DVOFF (R), VLIM

22 V 5V RF1 1.65 V VC 5V

0.22 mF

0.01 mF
560 pF
30 29 28 27 26 25 24 23 22 21 20 19 18 17 16
- +
Lb VM1 Lc Lc (G) MS RF2 GND1 OSC Vref VC VCC Cd HB Hc Hc

TA8493F/AF/BF

- + - +
Lb (G) La (G) La VM2 SB RF1 GND2 CRF N.C. FGO BRK Hb Hb Ha Ha
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0.33 W
22 mF

1000 pF 5V VCRF 2.5 V

· DVOFF (F): Measure VRF at VC = 1.63 V/1.5 V.


· DVOFF (R): Measure VRF at VC = 1.67 V/1.8 V.
· VLIM: Switch the VCRF from 0 V to 0.4 V.
Measure the VCRF at the point when output voltage level changes from low (L) to high (H)

18 2002-01-31
TA8493F/AF/BF
4. RON (U), VSAT (L)

12 V +
RF1 1.65 V 0.5 V 5V VHc

0.22 mF

0.01 mF
560 pF
30 29 28 27 26 25 24 23 22 21 20 19 18 17 16
- +
Lb VM1 Lc Lc (G) MS RF2 GND1 OSC Vref VC VCC Cd HB Hc Hc

TA8493F/AF/BF

- + - +
Lb (G) La (G) La VM2 SB RF1 GND2 CRF N.C. FGO BRK Hb Hb Ha Ha
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0.6 A

0.6 A

+ +
5V VHb VHa 2.5 V

+ + +
· RON (U): Determined output function by VHa , VHb , VHc (2.45 V/2.55 V).
Measure voltage value between VM and La, and change to resistance valve. b phase and c
phase are measured the same method.
+ + +
· VSAT (L): Determined output function by VHa , VHb , VHc (2.45 V/2.55 V).
Measure voltage value between La and GND. b phase and c phase are measured the same
method.

19 2002-01-31
TA8493F/AF/BF
5. IL (U), IL (L)

16 V RF1 5V

0.22 mF

0.01 mF
560 pF
A

30 29 28 27 26 25 24 23 22 21 20 19 18 17 16
- +
Lb VM1 Lc Lc (G) MS RF2 GND1 OSC Vref VC VCC Cd HB Hc Hc

TA8493F/AF/BF

- + - +
Lb (G) La (G) La VM2 SB RF1 GND2 CRF N.C. FGO BRK Hb Hb Ha Ha
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

· IL (U): Measure IM when La and GND are shorted. b phase and c phase are measured the same method.
· IL (L): Measure IM when VM and La are shorted. b phase and c phase are measured the same method.

20 2002-01-31
TA8493F/AF/BF
6. VMS (H), VMS (L), IINS, VBRK (H), VBRK (L), IINBRK

12 V VMS RF1 4V 5V VHc


16

0.22 mF

0.01 mF
560 pF
A

30 29 28 27 26 25 24 23 22 21 20 19 18 17 16
- +
Lb VM1 Lc Lc (G) MS RF2 GND1 OSC Vref VC VCC Cd HB Hc Hc

TA8493F/AF/BF

- + - +
Lb (G) La (G) La VM2 SB RF1 GND2 CRF N.C. FGO BRK Hb Hb Ha Ha
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0.33 W

5V VSB VHb VHa 2.5 V

· VMS (H): VMS = 3.0 V, VBRK = 0 V, verify that output function is reverse mode.
· VMS (L): VMS = 0.5 V, VBRK = 0 V, switch from foward mode to reverse mode by VHa, VHb VHc. Verify
that VRF changes to zero.
· IMS (L): VMS = 0 V, VBRK = 0 V
· VBRK (H): VMS = 5 V, VBRK = 3.0 V, verify that La = Lb = Lc: H
· VBRK (L): VMS = 5 V, VBRK = 0.5 V, verify that output function is reverse mode.

21 2002-01-31
TA8493F/AF/BF
7. VOFG (H), VOFG (L)

5V

0.22 mF

0.01 mF
560 pF
30 29 28 27 26 25 24 23 22 21 20 19 18 17 16
- +
Lb VM1 Lc Lc (G) MS RF2 GND1 OSC Vref VC VCC Cd HB Hc Hc

TA8493F/AF/BF

- + - +
Lb (G) La (G) La VM2 SB RF1 GND2 CRF N.C. FGO BRK Hb Hb Ha Ha
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

+
5V 2.5 V VHb

+
· VOFG (H): VHb = 2.53 V, IFGO = 10 mA (source)
+
· VOFG (L): VHb = 2.47 V, IFGO = 10 mA (sink)

8. VHYS

5V
0.22 mF

0.01 mF
560 pF

30 29 28 27 26 25 24 23 22 21 20 19 18 17 16
- +
Lb VM1 Lc Lc (G) MS RF2 GND1 OSC Vref VC VCC Cd HB Hc Hc

TA8493F/AF/BF

- + - +
Lb (G) La (G) La VM2 SB RF1 GND2 CRF N.C. FGO BRK Hb Hb Ha Ha
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

+
5V 2.5 V VHb

+
· VHYS: Switch the VHb from high (H) to low (L) and from (L) to (H).
+
Measure the VHb at the point when FGO function changes.

22 2002-01-31
TA8493F/AF/BF
Application Circuit

VCC
5V
Lb (G) Lc (G)

C1
La (G)
R1

20 VCC 2 1 27
VM1
+ 15 29 12 V
Ha

C3
C2
- 14
Ha 4

Amplifier
13 VM2

Matrix
+
Hb
- 12
Hb 3
16 La
+
Hc 30
- 17 Lb
Hc 28
Lc
Detection

TSD
Reverse

RF1
R1

6
RF2
25

R3
GND

FGO 10
18
HB
CRF
8
R2 VC PWM Signal

C4
Contol
21
R2

signal Vref
22
Vref
F/F
OSC
Stand by 5 SB
Mode Select Short Brake

MS 26 OSC 23 BRK 11 24 7 19 Cd
C6

C5

GND1 GND2

2SJ465 ´ 3

Note10: Utmost care is necessary in the design of the output line, VCC, VM and GND line since IC may be destroyed
due to short-circuit between outputs, air contamination fault, or fault by improper grounding.

23 2002-01-31
TA8493F/AF/BF
Package Dimensions

Weight: 0.63 g (typ.)

24 2001-08-30
TA8493F/AF/BF

RESTRICTIONS ON PRODUCT USE 000707EBA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The products described in this document are subject to the foreign exchange and foreign trade laws.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

25 2001-08-30

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