Introduction: In 1879, Edwin Hall, while working on his If the width of the slab is b and the applied Hall

plied Hall voltage is ,

Ph.D. thesis, observed that if an electrical conductor is placed then the electric field is ,
perpendicular to a magnetic field, a potential or voltage is
measured perpendicular to both the magnetic field and the
current. This voltage is proportional to the current and to the
magnetic field. This effect is known as the Hall effect. A visual Or, (2)
description of Hall Effect is shown in Figure-1. When the Hall voltage is created , the electric field is
generated.
The charge of each carrier of the slab is e. The force acting on
each charge ,
(3)
From the FIG. 1, it is seen that, the magnetic induction is
perpendicular to the Hall voltage ( ) and the direction of
force along the normal on the slab containing both and .
So, the equation (1) becomes ,
(4)
In equilibrium, the magnitude of electric and magnetic force will
be equal. So,
FIG. 1. A slab of metal undergoes Hall Effect.

In FIG. 1 , the Hall voltage is applied perpendicularly on the Or,

electric field of the slab ‘abcd’. Here, the presence of magnetic
fields causes the Lorentz Force. The Lorentz Force F is Or, (5)
expressed by equation 1.
Using equation (5) in equation (2), we get
= (1)
(6)
Number of charges per unit volume of the slab is n and the In equation 10 the relationship between and is linear.
cross sectional area of the slab is A.
The relationship suggests the Hall coefficient, , can be
The current through the strip , found through the slope.
The Hall coefficient ,
(7)

When the thickness of the slab is t, the cross sectional area of (11)
the slab , If the distance between two points between which the potential
Putting the value of A in equation (7), difference is measured is L , then the resistivity of the metal
slab can be measured.
The resistivity,

Or, (8)
(12)
Putting the value of in equation 6 we get, From the ratio of Hall coefficient to resistivity, the mobility of the
slab can be found.
So, the mobility ,

Or, (9) (13)

Doped semiconductors exhibit the Hall effect. To manipulate
We know that , Hall coefficient the electrical properties of the semiconductors, doping is
required. A Germanium strip is such a kind of semiconductor,
. which can be doped by using trivalent (p-type) or pentavalent
So, equation (9) becomes, (n-type) elements. In our current study, we aim to use a
Germanium strip in place of metal slab. The Hall coefficient,
mobility, resistivity of the Germanium strip are evaluated at
(10) room temperature.
Experiment demonstration
Instrument specifications Experiment procedure
In this experiment we used INDOSAW SK006 Hall effect Before starting the experiment, we completed all the
apparatus. It consists of two power supplies; one for connections as shown in Fig. 3. After giving the proper
electromagnet (0-16 V, 5 Amps) and one for constant current connections, we turned on the Gauss Meter and placed the hall
source (0-20 mA). It has a Gauss meter with hall probe, a probe away from the electromagnet. The reading of the Gauss
multimeter for measuring hall voltage. Most importantly a meter was adjusted to zero using the adjustment knob of the
semiconductor (Ge single crystal) mounted on a PCB. The Gauss meter. Then we switched on the constant current
properties of the crystal are as follows: p-type crystal, thickness source. We kept the current at 5 mA and the magnetic field at
0.5 mm, width 4 mm, length 8 mm. zero. Then we set the voltage range of the multimeter at 0-200
mV. By adjusting the zero set we checked that without a
magnetic field the hall voltage reading was zero as recorded by
the multimeter. We also brought the reading of the constant
current source to zero by adjusting the knob of the source. Upto
this point the electromagnet was switched off.

Then we turned on the electromagnet and selected the range of

the Gauss meter as x10. We placed the tip of the hall probe
and the crystal between the centre of the pole pieces. Then for
the whole experiment, we keep the current in the
electromagnetic ( IB ) constant at 1.5 A. Keeping the current
constant means keeping the magnetic field constant for the
whole experiment.

After these arrangements we increased the current (I P) through

Fig. 2: INDOSAW SK006 machine picture
the constant source in small amounts. We noted the probe
current (IP) reading and corresponding hall voltage (V H) reading.
We did the same process for the reverse current, by
interchanging the ‘+’ and ‘-’ connections of the coils.
After taking about 10 readings in this manner, we increased the
electromagnet current (IB) to 2 A and then repeated the above
processes.

All the data are given in Table 1, Table 2, Table 3 and Table 4.

By using Eqn (1), (2), (3) & (4) we determined the hall
coefficient, carrier concentration and hall mobility respectively.

Fig. 3: Block diagram for experimental setup with connections.

PCB has four sockets and a pot to make the hall voltage zero,
when there is no magnetic field and no flow of current.
 10 4.99 43.4 42.5 42.95 8.61 3.271 x 10-2

Data for hall voltage and hall coefficients

Table 1: Data for the ratio of hall voltage to probe current with
constant magnetic field of B = 1316 Gauss and I B = 1.5A
Hall Voltage Hall
No. Current Mean Mean coefficient
of IP DIrect Reverse VH VH / IP VH / IP RH
obs (mA) (mV) (mV) (mV) (ohm) (ohm) (m3C-1)
1 0.5 5.8 5.4 5.6 11.2 9.0743 4.26 x 10-2
2 1.06 10.3 9.9 10.1 9.53 3.62 x 10-2

3 1.55 14.1 13.9 14 9.03 3.43 x 10-2

4 2.06 18.7 18.6 18.65 9.053 3.44 x 10-2 Fig:

5 2.56 22.8 22.6 22.7 8.87 3.37 x 10-2

6 2.99 26.3 26.4 26.35 8.81 3.34 x 10-2

7 3.51 30.5 30.4 30.45 8.68 3.29 x 10-2

8 4 34.7 34.4 34.55 8.34 3.17 x 10-2

9 4.55 39.5 38.9 39.2 8.62 3.274 x 10-2

Table 2: Data for the ratio of hall voltage to probe current with
constant magnetic field of B = 1002 Gauss and I B = 1.5A
Hall Voltage
No. Current Mean Mean Hall
of IP DIrect Reverse VH VH / IP VH / IP coefficient, R
obs (mA) (mV) (mV) (mV) (ohm) (ohm) (m
1 0.5 0.5 0.2 0.35 0.7 3.5 x 10
2 1 0.9 0.5 0.7 0.7 3.5 x 10

3 1.5 1.1 0.6 0.85 0.57 2.84 x 10

4 2 1.3 0.9 1.1 0.55 2.74 x 10

5 2.5 1.5 1.1 1.3 0.52 2.6 x 10

0.5925
6 3 1.7 1.6 1.65 0.55 2.74 x 10

7 3.5 1.9 2 2 0.57 2.84 x 10

8 4 2.3 2.3 2.3 0.575 2.9 x 10

9 4.5 2.5 2.7 2.6 0.58 2.92 x 10

10 5 2.6 3.5 3.05 0.61 3.04 x 10

Table 3: Data for the ratio of hall voltage to probe current with
constant magnetic field of B = 1259 Gauss and I B = 2.0A
Hall Voltage Hall
No. Current Mean Mean coefficient,
of IP DIrect Reverse VH VH / IP VH / IP RH
obs (mA) (mV) (mV) (mV) (ohm) (ohm) (m3C-1)
1 0.5 0.6 0.4 0.5 1 3.97 x 10-2
2 1 0.9 0.9 0.9 0.9 3.57 x 10-2

3 1.5 1.5 1.1 1.3 0.87 3.46 x 10-2

4 2 1.6 1.5 1.55 0.78 3.1 x 10-2

FIg:
5 2.5 2.0 1.8 1.9 0.76 3.01 x 10-2
0.848
6 3 2.5 2.3 2.4 0.8 3.18 x 10-2

7 3.5 2.9 2.8 2.85 0.81 3.21 x 10-2

8 4 3.4 3.3 3.35 0.84 3.33 x 10-2

9 4.5 3.9 3.7 3.85 0.86 3.4 x 10-2

10 5 4.4 4.2 4.3 0.86 3.41 x 10-2

Table 4: Variation of hall voltage with magnetic field for Ip = 5.0
mA

No. of Current, IB B' B = B' - 52 VH' VH = VH' - 38.2

obs (amp) (Gauss) (Gauss) (mV) (mV)
1 0 52 0 38.2 0
2 0.2 221 169 38.8 0.6
3 0.4 349 297 39.1 0.9
4 0.6 519 467 39.6 1.4
5 0.8 659 607 40.1 0.9
6 1 857 805 40.7 2.5
7 1.2 1022 970 41.1 2.9
8 1.4 1174 1122 41.7 3.5
9 1.6 1334 1282 42.2 4
10 1.8 1503 1451 42.4 4.2
11 2 1669 1617 42.9 4.7
Table 5: Data for resistivity when B = 1002 Gauss and I B = 1.5 Table 6: Data for resistivity when B = 1259 Gauss and IB = 2.0
amp amp
Probe Distance between two Hall Probe Hall
No. current, points between which is voltage, No. current Distance between two points voltage
of IB potential difference is VH Resistivity of Ip between which is potential Vh Resistivity
obs (mA) measured, L (m) (mV) ρ obs (mA) difference is measured, L (m) (mV) ρ
1 0.5 0.5 9.7 x 10-4
1 0.5 0.35 6.8 x 10 -4

2 1 0.9 8.73 x 10-4

2 1 0.7 6.8 x 10-4
3 1.5 1.3 8.44 x 10-4

3 1.5 0.85 5.5 x 10-4 4 2 1.55 7.6 x 10-4

4 2 1.1 5.3 x 10-4 5 2.5 1.9 7.4 x 10-4

0.206 x 10-2
5 2.5 -2 1.3 5 x 10-4 6 3 2.4 7.76 x 10-4
0.206 x 10
6 3 1.65 5.3 x 10-4 7 3.5 2.85 7.85 x 10-4

7 3.5 2 5.5 x 10-4 8 4 3.35 8.15 x 10-4

8 4 1.3 5.5 x 10-4 9 4.5 3.85 8.34 x 10-4

9 4.5 2.6 5.6 x 10-4 10 5 4.3 8.34 x 10-4

10 5 3.05 5.9 x 10-4

Table 7: Reading for VH at constant IP = 2.5 mA.
Hall Voltage
No. of IB Mean VH
Direct Reverse Table 8: Reading for VH at constant IP = 7 mA
obs. (mA) (mV)
1 0.2 0.7 0.1 0.4 Hall Voltage
IB Mean VH
2 0.4 1 0.4 0.7 No. of obs. (mA) Direct Reverse (mV)
3 0.6 1.2 0.5 0.85 1 0.2 0.7 0.5 0.6
4 0.8 1.4 0.6 1 2 0.4 1.3 1.1 1.2
5 1 1.6 0.8 1.2 3 0.6 1.5 1.3 1.4
6 1.2 1.8 1 1.4 4 0.8 2 2 2
7 1.4 2 1.2 1.6 5 1 2.45 2.35 2.4
8 1.6 2.2 1.4 1.8 6 1.2 3.1 2.9 3
9 1.8 2.3 1.6 1.95 7 1.4 3.6 3.5 3.55
10 2 2.5 1.8 2.15 8 1.6 3.95 3.85 3.9
9 1.8 4.4 4.4 4.4
10 2 5 5 5