2SK2926(L), 2SK2926(S)

Silicon N Channel MOS FET

High Speed Power Switching
REJ03G1040-0200
(Previous: ADE-208-535)
Rev.2.00
Sep 07, 2005

Features
• Low on-resistance
RDS(on) = 0.042 Ω typ.
• 4 V gate drive devices.
• High speed switching

Outline

RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK(L)-(2)) (Package name: DPAK(S))
4 4 D

G 1. Gate
1 2. Drain
2 3. Source
3
4. Drain

1
2 3 S

Rev.2.00 Sep 07, 2005 page 1 of 8

2SK2926(L), 2SK2926(S)

Absolute Maximum Ratings

(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID 15 A
Drain peak current ID(pulse)*1 60 A
Body to drain diode reverse drain current IDR 15 A
Avalanche current IAP*3 15 A
Avalanche energy EAR*3 19 mJ
Channel dissipation Pch*2 25 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
3. Value at Ta = 25°C, Rg ≥ 50 Ω

Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Gate to source cutoff voltage VGS(off) 1.5 — 2.5 V ID = 1 mA, VDS = 10 V
Static drain to source on state RDS(on) — 0.042 0.055 Ω ID = 8 A, VGS = 10 V*4
resistance RDS(on) — 0.065 0.11 Ω ID = 8 A, VGS = 4 V*4
Forward transfer admittance |yfs| 7 11 — S ID = 8 A, VDS = 10 V*4
Input capacitance Ciss — 500 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 260 — pF f = 1 MHz
Reverse transfer capacitance Crss — 110 — pF
Turn-on delay time td(on) — 10 — ns VGS = 10 V, ID = 8 A,
Rise time tr — 80 — ns RL = 3.75 Ω
Turn-off delay time td(off) — 100 — ns
Fall time tf — 110 — ns
Body to drain diode forward voltage VDF — 1.0 — V IF = 15 A, VGS = 0
Body to drain diode reverse recovery trr — 55 — ns IF = 15 A, VGS = 0,
time diF/ dt = 50 A/µs
Note: 4. Pulse test

Rev.2.00 Sep 07, 2005 page 2 of 8

2SK2926(L), 2SK2926(S)

Main Characteristics

Power vs. Temperature Derating Maximum Safe Operation Area

40 1000
Channel Dissipation Pch (W)

300

Drain Current ID (A)

30 100 1
10 0 µs
30 0
PW 1 µs
= m
20 10 DC 10 s
Op ms
er (1
3 at sh
Operation in ion ot)
(T
10 1 this area is c=
limited by RDS(on) 25
°C
0.3 )
Ta = 25°C
0.1
0 50 100 150 200 0.1 0.3 1 3 10 30 100
DS
Case Temperature TC (°C) Drain to Source Voltage VDS (V)

Typical Output Characteristics Typical Transfer Characteristics

10 V 6 V 5 V
20 20
4 .5 V 4V VDS = 10 V
Pulse Test
16 16
Drain Current ID (A)

Drain Current ID (A)

3.5 V
12 12

8 8
25°C
3V
Tc = 75°C
4 4
Pulse Test –25°C
VGS = 2.5 V

0 2 4 6 8 10 0 1 2 3 4 5

Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage Static Drain to Source on State

vs. Gate to Source Voltage Resistance vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)

2.0 1.0
VDS (on) (V)
Drain to Source Saturation Voltage

Pulse Test Pulse Test

0.5
1.6

0.2
1.2
0.1
ID = 20 A VGS = 4 V
0.8
0.05

10 A 10 V
0.4
5A 0.02

0.01
0 4 8 12 16 20 1 2 5 10 20 50 100

Gate to Source Voltage VGS (V) Drain Current ID (A)

Rev.2.00 Sep 07, 2005 page 3 of 8

2SK2926(L), 2SK2926(S)

Static Drain to Source on State Forward Transfer Admittance

Resistance vs. Temperature vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)

Forward Transfer Admittance yfs (S)

0.20 20
Pulse Test

0.16 10
Tc = –25°C

ID = 10 A 5A 5
0.12 25°C

0.08 VGS = 4 V
2 75°C

0.04 20 A 10 A 5 A 1
VDS = 10 V
10 V
Pulse Test
0 0.5
–40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 10 20

Case Temperature TC (°C) Drain Current ID (A)

Body to Drain Diode Reverse Typical Capacitance

Recovery Time vs. Drain to Source Voltage
500 2000
di / dt = 50 A / µs
Reverse Recovery Time trr (ns)

VGS = 0, Ta = 25°C 1000

200
Capacitance C (pF)

500 Ciss
100
200
50 Coss
100

20 50 Crss

10 20 VGS = 0
f = 1 MHz
5 10
0.1 0.2 0.5 1 2 5 10 20 0 10 20 30 40 50

Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V)

Dynamic Input Characteristics Switching Characteristics

100 20 1000
Drain to Source Voltage VDS (V)

Gate to Source Voltage VGS (V)

ID = 15 A

300
Switching Time t (ns)

80 16
VGS td(off)
VDS 100
60 12
tf tr
VDD = 10 V 30
25 V
40 8 td(on)
50 V
10

20 VDD = 50 V 4 3 VGS = 10 V, VDD = 30 V

25 V
10 V PW = 5 µs, duty < 1 %
0 1
0 8 16 24 32 400 0.1 0.2 0.5 1 2 5 10 20

Gate Charge Qg (nc) Drain Current ID (A)

Rev.2.00 Sep 07, 2005 page 4 of 8

2SK2926(L), 2SK2926(S)

Reverse Drain Current vs. Maximum Avalanche Energy vs.

Source to Drain Voltage Channel Temperature Derating

Repetitive Avalanche Energy EAR (mJ)

20 25
(A)

IAP= 15 A
VDD = 25 V
Reverse Drain Current IDR

16 10 V 20
L = 100 µH
duty < 0.1 %
5V
12 15 Rg > 50 Ω
VGS = 0, –5 V

8 10

4 5

Pulse Test
0
0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150

Source to Drain Voltage VSD (V) Channel Temperature Tch (°C)

Normalized Transient Thermal Impedance vs. Pulse Width

Normalized Transient Thermal Impedance γs (t)

Tc = 25°C
D=1
1

0.5

0.3
0.2

0.1
θ ch – c(t) = γ s (t) • θ ch – c
0.1 0.05 θ ch – c = 5°C/W, Tc = 25°C

0.02
e PW
0.0
1 uls PDM D=
otP T
0.03 sh
1 PW
T

0.01
10 µ 100 µ 1m 10 m 100 m 1 10
Pulse Width PW (S)

Avalanche Test Circuit Avalanche Waveform

VDSS
L 1
VDS EAR = • L • IAP2 •
2 VDSS – VDD
Monitor
IAP V(BR)DSS
Monitor
IAP
Rg D. U. T VDD VDS
ID
Vin 50 Ω
15 V
VDD
0

Rev.2.00 Sep 07, 2005 page 5 of 8

2SK2926(L), 2SK2926(S)

Switching Time Test Circuit Switching Time Waveforms

Vin Monitor Vout 90%

Monitor
D.U.T.
Vin 10%
RL

Vout 10% 10%

Vin VDD
50 Ω = 30 V
10 V
90% 90%

td(on) tr td(off) tf

Rev.2.00 Sep 07, 2005 page 6 of 8

2SK2926(L), 2SK2926(S)

Package Dimensions
JEITA Package Code RENESAS Code Package Name MASS[Typ.]
Unit: mm
 PRSS0004ZD-B DPAK(L)-(2) / DPAK(L)-(2)V 0.42g

1.7 ± 0.5
6.5 ± 0.5 2.3 ± 0.2
5.4 ± 0.5 0.55 ± 0.1

5.5 ± 0.5
1.15 ± 0.1 1.2 ± 0.3

4.7 ± 0.5
0.8 ± 0.1

16.2 ± 0.5
(0.7)

3.1 ± 0.5

0.55 ± 0.1 0.55 ± 0.1

2.29 ± 0.5 2.29 ± 0.5

JEITA Package Code RENESAS Code Package Name MASS[Typ.]

SC-63 PRSS0004ZD-C DPAK(S) / DPAK(S)V 0.28g
Unit: mm
1.5 ± 0.5

6.5 ± 0.5 2.3 ± 0.2

5.4 ± 0.5 0.55 ± 0.1 (5.1)
(0.1) (0.1)
(5.1)
5.5 ± 0.5
1.2 Max

0 – 0.25

(1.2)

0.55 ± 0.1
1.0 Max. 0.8 ± 0.1
2.5 ± 0.5

2.29 ± 0.5 2.29 ± 0.5

Rev.2.00 Sep 07, 2005 page 7 of 8

2SK2926(L), 2SK2926(S)

Ordering Information
Part Name Quantity Shipping Container
2SK2926L-E 3200 pcs Box (Sack)
2SK2926STL-E 3000 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.

Rev.2.00 Sep 07, 2005 page 8 of 8

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