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STJ828M P-Channel MOSFET Datasheet

The STJ828M is a high-speed P-channel enhancement-mode MOSFET for analog switch and switching applications. It has a low threshold voltage of -0.5 to -1.5V, allowing it to be driven with a -2.5V gate voltage. The MOSFET has low on-resistance of 40 ohms maximum and fast switching times of 0.15 microseconds maximum. The document provides key specifications, electrical characteristics curves, and package information for the STJ828M MOSFET.

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85 views5 pages

STJ828M P-Channel MOSFET Datasheet

The STJ828M is a high-speed P-channel enhancement-mode MOSFET for analog switch and switching applications. It has a low threshold voltage of -0.5 to -1.5V, allowing it to be driven with a -2.5V gate voltage. The MOSFET has low on-resistance of 40 ohms maximum and fast switching times of 0.15 microseconds maximum. The document provides key specifications, electrical characteristics curves, and package information for the STJ828M MOSFET.

Uploaded by

gotcha75
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Semiconductor STJ828M

P-Channel Enhancement-Mode MOSFET

Description
• High speed switching application.
• Analog switch application.
Features
• -2.5V Gate drive.
• Low threshold voltage : Vth = -0.5~ -1.5V.
• High speed.

Ordering Information
Type NO. Marking Package Code

STJ828M J828 TO-92M

Outline Dimensions unit : mm

4.0±0.1
3.0±0.1

0.44 REF

0.52 REF 2.15 Typ.


11.85 Typ.

14.0±0.40

1.27 Typ.

2.54 ± 0.1.

PIN Connections
1. Source
2.3±0.1.

2. Drain
3. Gate
0.42 Typ.
0.7 Typ.

3.0±0.1

3.8 Min.

KST-I016-000 1
STJ828M

Absolute maximum ratings (Ta=25°C)


Characteristic Symbol Ratings Unit
Drain-Source voltage VDS -20 V
Gate-Source voltage VGSS ±7 V
DC Drain current ID -50 mA
Drain Power dissipation PD 400 mW
Channel temperature Tch 150 °C
Storage temperature range Tstg -55~150 °C

Electrical Characteristics (Ta=25°C)


Characteristic Symbol Test Condition Min. Typ. Max. Unit
Drian-Source breakdown voltage BVDSS ID=-100µA, VGS=0 -20 V
Gate-Threshold voltage Vth ID=-0.1mA, VDS=-3V -0.5 -1.5 V
Drain cut-off current IDSS VDS=-20V, VGS=0 -1 µA
Gate leakage current IGSS VGS=±7V, VDS=0 ±1 µA
Drain-Source on-resistance RDS(ON) VGS=-2.5V, ID=-10mA 40 Ω
Forward transfer admittance ｜Yfs｜ VDS=-3V, ID=-10mA 15 mS
Input capacitance Ciss VDS=-3V, VGS=0, f=1MHz 10.4 pF
Output capacitance Coss VDS=-3V, VGS=0, f=1MHz 8.4 pF
Reverse Transfer capacitance Crss VDS=-3V, VGS=0, f=1MHz 2.8 pF
VDD=-3V, ID=-10mA
Turn-on time tON 0.15 ㎲
VGEN=0~-2.5V
VDD=-3V, ID=-10mA
Turn-off time tOFF 0.13 ㎲
VGEN=0~-2.5V

*. Switching Time Test Circuit

KST-I016-000 2
STJ828M
Electrical Characteristic Curves

Fig1 ID - VDS Fig2 ID - VDS

℃ ℃

Fig3 IDR - VDS Fig4 ID - VGS

100℃ - ℃

Fig5 Yfs - ID Fig6 C - VDS

℃
℃

KST-I016-000 3
STJ828M

Fig7 VDS(on) - ID Fig8 t - ID

G
℃
Ω

Fig. 9 PD - Ta

KST-I016-000 4
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

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