Ion Implantation and Diffusion
Ion Implantation
Process which is used to selectively deposit dopant ions into the surface of
the wafers.
This process involves the direct introduction of highly energetic, charged
atomic species onto the target surface.
This process allows more precise control of junction depths and dopant
distributions.
The greatest advantage of ion implant over diffusion is its more precise
control for depositing dopant atoms into the substrate
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Ion Implantation Process
During ion implantation, impurity atoms are vaporized and accelerated toward the
silicon substrate.
These high-energy atoms enter the crystal lattice and lose their energy by colliding with
some silicon atoms before finally coming to rest at some depth.
Adjusting the acceleration energy controls the average depth of depositing the impurity
atoms.
Heat treatment is used to anneal or repair the crystal lattice disturbances caused by the
atomic collisions.
These are all the examples of ion implanters
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Ion Implantation
Focus Beam trap and Neutral beam and
A typical Ion Implantation gate plate beam path gated
equipment consists of a feed
source, an ion source, a device
for extracting and analyzing
ions, an acceleration tube, a
scanning system, a high
vacuum system. Neutral beam trap Y - axis X - axis Wafer in wafer
and beam gate scanner scanner process chamber
Gases Solids
Ar Ga Process Conditions
AsH3 In
B11F3 * Sb
Flow Rate: 5 sccm
He Liquids Pressure: 10-5 Torr
N2 Al(CH3)3 Accelerating Voltage: 5 to 200 keV
PH3
SiH4
SiF4
* High proportion of the total product use
GeH4
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Diffusion Process
Diffusion is the movement of a chemical
species from an area of high
concentration to an area of lower
concentration.
The controlled diffusion of dopants into
silicon is the foundation of forming a p-
n junction and fabrication of devices
during wafer fabrication.
Diffusion is used primarily to alter the
type and level of conductivity of
semiconductor materials.
It is used to form bases, emitters, and
resistors in bipolar devices, as well as Examples of Diffusion Furnaces
drains and sources in MOS devices.
It is also used to dope polysilicon layers
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Methods of planar process
Diffusion Ion Implantation
A uniformly doped ingot is
sliced into wafers. A particle accelerator is used to
An oxide film is then grown on accelerate a doping atom so
the wafers.
The film is patterned and that it can penetrate a silicon
etched using photolithography crystal to a depth of several
exposing specific sections of the
silicon. microns
The wafers are then spun with Lattice damage to the crystal is
an opposite polarity doping
source adhering only to the then repaired by heating the
exposed areas. wafer at a moderate
The wafers are then heated in a
furnace (800-1250 deg.C) to temperature for a few minutes.
drive the doping atoms into the This process is called
silicon.
annealing.
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Diffusion Process Ion Implantation
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Comparison of Diffusion and Ion Implantation
Diffusion:
Diffusion is a cheaper and more simplistic method, but can only be
performed from the surface of the wafers.
Dopants also diffuse unevenly, and interact with each other altering the
diffusion rate.
Ion Implantation:
Ion implantation is more expensive and complex.
It does not require high temperatures and also allows for greater control of
dopant concentration and profile.
It is an anisotropic process and therefore does not spread the dopant
implant as much as diffusion.
Aids in the manufacture of self-aligned structures which greatly improve
the performance of MOS transistors.
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Wafer up to Ion Implantation Process
silicon wafer silicon wafer silicon dioxide (oxide)
p- silicon epi layer p- silicon epi layer
p+ silicon substrate p+ silicon substrate p+ silicon substrate
photoresist photoresist
field oxide
p- epi p- epi
p+ substrate p+ substrate
phosphorus
(-) ions photoresist mask
junction field oxide
depth
n-w ell p- epi
p-channel transistor
p+ substrate
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