diodes mosfets mosfet amplifiers

nmos large signal model common source common gate

vD = nVT ln( iIDS + 1) D D D
G B G G Rin = RG 1
VD iD Rin =
iD = IS (e nVT − 1) Ro = ro ||RD gm
VD S S S R o = RD
ID ≈ IS e nVT v D � VT Av o = −gm · (ro ||RD )
ID ≈ −IS vD � −VT saturation: vGS > Vthn , vDS ≥ vGS − Vthn : Av o = g m R D
1
iD = 2 · kn� · W 2
L (vGS − Vthn ) · (1 + λ · vDS )
large signal model
triode: vGS > Vthn , vDS ≤ vGS − Vthn : !"#$%
� 2
�
vDS
ID = 0 VD < VD0 iD = kn� · W
L (vGS − Vthn ) · vDS − 2
)*'+% !'(%
!&'(#
)"#$%
VD = VD0 ID > 0 cutoff: vGS < Vthn :
!&%
)&'(#
iD = 0 )'(%
small signal model
To be a small signal, |vD | � 2nVT . pmos large signal model )*$+# !$%#
!"#$%&'%$'

D D D
nVT G G G
common source Rwith Rvs sig
!"#

rd = forward or reverse bias B in

ID + IS iD )$%#
vS Rin = RG
nVT S S S
rd ≈ forward bias only
ID saturation: vGS < Vthn , vDS ≤ vGS − Vthn : Ro = R D common drain
1 W g m Rd (source follower)
iD = 2 · kn� · L
2
(vGS − Vthn ) · (1 + λ · vDS ) Av o = − vout
Small signals (NMOS)
1 + g m RS
vGS < Vthn , vDS ≥ vGS − Vthn :
triode:
mosfet small signal
The small signal model is exactly the same as that for the PMOS. You can derive this yourself.
iD = kn� · W
� 2
vDS
� !
!
Rin = RG
1
L (vGS − Vthn ) · vDS − 2 !
Ro =
G D !
!"#$% gm
!
+ cutoff: vGS > Vthn : g m ˜ ro1 // ro 2 
!
v gs g m ˜ v gs ro ! g m ro
()&*% !&'% Avo Av o =
- iD = 0
!
!
1  g m ˜ ro1 // ro 2  1 + g m ro
! !+%
! ("#$%

S !
! (&'%
! "#$%&'!&%!
! !"#$' %#&'
W W
Vth ) ˜ (1  O ˜ VDS )2 · ID | P p ˜ Cox ˜ ˜ (VGS  Vthn )
!
gm P p ˜ Cox ˜ ˜ (V�GS  W !
L kn
gm = · n · VOV = L ! %('
%)*+'
L VOV !
2 ˜ ID � ! % %
gm W
! %
VGS  Vthn = 2 · kn� · L · ID !
! % Elementary Configurations: Small Signal Analysis
! ' #& !)*+'

To allow fast analysis of circuits, it is good to remember

' ' small signal analysis of a few
the
W 1 W
gm 2 ˜ P n ˜ Cox ˜ ˜ (1  O ˜ VDS
r˜ IoD = | 2 ˜ P n ˜ Cox ˜ ˜ ID important elementary configurations.
L λ · ID � ) L

ID AC 1
� ro R
1 I1D = 1 W R gm R  r0  g m ˜ R ˜ r0
ro | 1 + λ · VIDS
c ˜ P n ˜ Cox ˜ ˜ (VGS  Vthn ) 2
O ˜ I Dc O ˜ ID D
2 L f O 0
AC
AC
ID
AC
1  O ˜ VDS AC
AC

Body effect 1 R
R AC
As mentioned before, the MOSFET is really a 4-terminal device. When B is not connected to S, gm AC
the source-body voltage impacts the effective threshold voltage. For small signals, this results in
the modified equivalent model shown below (the same for both nMOS and pMOS). The
derivation of these models can be found in the textbook. (a) (b) (c) (d) (e)

Unless specifically stated otherwise, in this course we will assume B is connected to S. As a

result, vbs = 0, and we can simply use the models discussed earlier that do not include the body
effect.
ECE120, Winter 2010 5 - 12
D

G B
+ +
vgs g m ˜ vgs ro g mb ˜ vbs vbs
- -