Si2308BDS

www.vishay.com
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
FEATURES
SOT-23 (TO-236) • Halogen-free according to IEC 61249-2-21
available
D • TrenchFET® power MOSFET
3
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
2 www.vishay.com/doc?99912
S

1 APPLICATIONS D
G
• Battery Switch
Top View
• DC/DC Converter
Marking Code: Si2308BDS (L8)
G
PRODUCT SUMMARY
VDS (V) 60
RDS(on) max. (Ω) at VGS = 10 V 0.156
RDS(on) max. (Ω) at VGS = 4.5 V 0.192 S

Qg typ. (nC) 2.3 N-Channel MOSFET

ID (A) a 2.1
Configuration Single

ORDERING INFORMATION
Package TSOP-6 Single
Lead (Pb)-free SI2308BDS-T1-E3
SI2308BDS-T1-GE3
Lead (Pb)-free and halogen-free
SI2308BDS-T1-BE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 60
V
Gate-source voltage VGS ±20
TC = 25 °C 2.3
TC = 70 °C 1.8
Continuous drain current (TJ = 150 °C) ID
TA = 25 °C 1.9 b,c
TA = 70 °C 1.5 b,c
Pulsed drain current IDM 8 A
TC = 25 °C 1.39
Continuous source-drain diode current IS
TA = 25 °C 0.91 b,c
Avalanche current IAS 6
L = 0.1 mH
Single pulse avalanche energy EAS 1.8
TC = 25 °C 1.66
TC = 70 °C 1.06
Maximum power dissipation PD W
TA = 25 °C 1.09 b,c
TA = 70 °C 0.7 b,c
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum Junction-to-Ambient b, d t≤5s RthJA 90 115
°C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 60 75
Notes
a. TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 130 °C/W

S21-0226-Rev. D, 08-Mar-2021 1 Document Number: 69958

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Si2308BDS
www.vishay.com
Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VDS = 0 V, ID = 250 μA 60 - - V
VDS temperature coefficient ΔVDS/TJ - 55 -
ID = 250 μA mV/°C
VGS(th) temperature coefficient ΔVGS(th)/TJ - -5 -
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 1 - 3 V
Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
VDS = 60 V, VGS = 0 V - - 1
Zero gate voltage drain current IDSS μA
VDS = 60 V, VGS = 0 V, TJ = 55 °C - - 10
On-state drain current a ID(on) VDS ≥ -5 V, VGS = 10 V 8 - - A
VGS = 10 V, ID = 1.9 A - 0.130 0.156
Drain-source on-state resistance a RDS(on) Ω
VGS = 4.5 V, ID = 1.7 A - 0.160 0.192
Forward Transconductance a gfs VDS = 15 V, ID = 1.9 A - 5 - S
Dynamic b
Input capacitance Ciss - 190 -
Output capacitance Coss VDS = 30 V, VGS = 0 V, f = 1 MHz - 26 - pF
Reverse transfer capacitance Crss - 15 -
VDS = 30 V, VGS = 10 V, ID = 1.9 A - 4.5 6.8
Total gate charge Qg
- 2.3 3.5
nC
Gate-source charge Qgs VDS = 30 V, VGS = 4.5 V, ID = 1.9 A - 0.8 -
Gate-drain charge Qgd - 1 -
Gate resistance Rg f = 1 MHz 0.6 2.8 5.6 Ω
Turn-on delay time td(on) - 4 6
Rise time tr VDD = 30 V, RL = 20 Ω - 10 15
Turn-off delay time td(off) ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 Ω - 10 15
Fall time tf - 7 10.5
ns
Turn-on delay time td(on) - 15 23
Rise time tr VDD = 30 V, RL = 20 Ω - 16 24
Turn-off delay time td(off) ID = 1.5 A, VGEN = 4.5 V, Rg = 1 Ω - 11 17
Fall time tf - 11 17
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS TC = 25 °C - - 1.39
A
Pulse diode forward current a ISM - - 8
Body diode voltage VSD IS = 1.5 A - 0.8 1.2 V
Body diode reverse recovery time trr - 15 23 ns
Body diode reverse recovery charge Qrr - 10 15 nC
IF = 1.5 A, dI/dt = 100 A/μs, TJ = 25 °C
Reverse recovery fall time ta - 12 -
ns
Reverse recovery rise time tb - 3 -
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S21-0226-Rev. D, 08-Mar-2021 2 Document Number: 69958

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Si2308BDS
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

10 4

VGS = 10 V thru 5 V
8
VGS = 4 V 3

I D - Drain Current (A)

I D - Drain Current (A)

TC = - 55 °C
6

4 TC = 125 °C

1
2 VGS = 3 V TC = 25 °C

VGS = 2 V
0 0
0 1 2 3 4 5 0.0 0.7 1.4 2.1 2.8 3.5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.30 300

240
R DS(on) - On-Resistance (Ω)

0.24
Ciss
C - Capacitance (pF)

180

0.18 VGS = 4.5 V

120
VGS = 10 V
0.12
60
Coss

Crss
0.06 0
0 2 4 6 8 10 0 10 20 30 40 50 60

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 2.0
ID = 1.9 A
VGS - Gate-to-Source Voltage (V)

8 1.7 VGS = 10 V, ID = 1.9 A

VDS = 30 V
R DS(on) - On-Resistance
(Normalized)

6 1.4
VDS = 48 V

4 1.1 VGS = 4.5 V, ID = 1.7 A

2 0.8

0 0.5
0 1 2 3 4 5 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

S21-0226-Rev. D, 08-Mar-2021 3 Document Number: 69958

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Si2308BDS
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

10 0.35
ID = 1.9 A

0.30

R DS(on) - On-Resistance (Ω)

I S - Source Current (A)

TJ = 150 °C 0.25 TJ = 125 °C

TJ = 25 °C
1

0.20

0.15 TJ = 25 °C

0.1 0.10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 3 4 5 6 7 8 9 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

2.4 10

8
2.1
ID = 250 µA TA = 25 °C
Power (W)

6 Single Pulse
VGS(th) (V)

1.8
4

1.5
2

1.2 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Temperature (°C) Time (s)

Threshold Voltage Single Pulse Power, Junction-to-Ambient

10

Limited by R DS(on)*

100 µs
I D - Drain Current (A)

1 ms

10 ms
0.1
100 ms

TA = 25 °C 1 s, 10 s
BVDSS Limited DC
Single Pulse
0.01
0.1 1 10 100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which R DS(on) is specified

Safe Operating Area

S21-0226-Rev. D, 08-Mar-2021 4 Document Number: 69958

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Si2308BDS
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

3.0

2.4

I D - Drain Current (A)

1.8

1.2

0.6

0.0
0 25 50 75 100 125 150

TC - Case Temperature (°C)

Current Derating a

2.0 1.2

1.6
0.9
Power (W)

1.2
Power (W)

0.6

0.8

0.3
0.4

0.0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TC - Case Temperature (°C) TA - Ambient Temperature (°C)

Power Junction-to-Case Power Junction-to-Ambient

Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit

S21-0226-Rev. D, 08-Mar-2021 5 Document Number: 69958

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Si2308BDS
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Duty Cycle = 0.5

Normalized Effective Transient
Thermal Impedance

0.2

0.1 Notes:
0.1
0.05 PDM

t1
0.02 t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 130 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

Duty Cycle = 0.5

Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69958.

S21-0226-Rev. D, 08-Mar-2021 6 Document Number: 69958

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
Vishay Siliconix

SOT-23 (TO-236): 3-LEAD

3
E1 E
1 2

S e

e1

0.10 mm
C
0.004" C 0.25 mm
A A2 q
Gauge Plane
Seating Plane Seating Plane
A1 C
L
L1

MILLIMETERS INCHES
Dim
Min Max Min Max
A 0.89 1.12 0.035 0.044
A1 0.01 0.10 0.0004 0.004
A2 0.88 1.02 0.0346 0.040
b 0.35 0.50 0.014 0.020
c 0.085 0.18 0.003 0.007
D 2.80 3.04 0.110 0.120
E 2.10 2.64 0.083 0.104
E1 1.20 1.40 0.047 0.055
e 0.95 BSC 0.0374 Ref
e1 1.90 BSC 0.0748 Ref
L 0.40 0.60 0.016 0.024
L1 0.64 Ref 0.025 Ref
S 0.50 Ref 0.020 Ref
q 3° 8° 3° 8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479

Document Number: 71196 www.vishay.com

09-Jul-01 1
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SOT-23

0.037 0.022
(0.950) (0.559)
(2.692)

(1.245)
0.106

0.049
(0.724)
0.029

0.053
(1.341)

0.097
(2.459)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index Return to Index

APPLICATION NOTE

Document Number: 72609 www.vishay.com

Revision: 21-Jan-08 25
 Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 09-Jul-2021 1 Document Number: 91000