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A733 Datasheet PDF

This document provides specifications for the WEITRON A733 PNP transistor. It lists maximum ratings for voltage and current parameters. It also provides typical electrical characteristics including breakdown voltages, cut-off currents, current gain, saturation voltage, and transition frequency. The transistor has a TO-92 package and is classified based on its current gain into ranks of R, Q, P, or K types.

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0% found this document useful (0 votes)
1K views2 pages

A733 Datasheet PDF

This document provides specifications for the WEITRON A733 PNP transistor. It lists maximum ratings for voltage and current parameters. It also provides typical electrical characteristics including breakdown voltages, cut-off currents, current gain, saturation voltage, and transition frequency. The transistor has a TO-92 package and is classified based on its current gain into ranks of R, Q, P, or K types.

Uploaded by

ingucv
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
  • Specifications of PNP Transistor: Provides specifications and electrical characteristics of the PNP Transistor including maximum ratings and hFE classification.
  • Ratings and Characteristic Curves: Features characteristic curves detailing the performance metrics such as DC current gain and collector saturation voltage of the transistor.

WEITRON A733

PNP Transistor COLLECTOR


P b Lead(Pb)-Free 2.

3. 1. EMITTER
BASE 2. COLLECTOR
3. BASE
1.
EMITTER TO-92

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


Parameter Symbol Value Units
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current -Continuous IC -100 mA
Collector Power Dissipation PC 250 mW
Junction Temperature TJ 150 ℃
Storage Temperature Tstg -55 to +150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC= -50uA,IE=0 -60 V

Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -50 V

Emitter-base breakdown voltage V(BR)EBO IE= -50uA, IC=0 -5 V

Collector cut-off current ICBO VCB= -60V, IE=0 -0.1 uA

Emitter cut-off current IEBO VEB= -5 V, IC=0 -0.1 uA

DC current gain hFE VCE= -6V, IC= -1mA 90 200 600

Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB=- 10mA -0.18 -0.3 V

Base-emitter voltage VBE VCE=-6V,IC=-1.0mA -0.58 -0.62 -0.68 V

Transition frequency fT VCE=-6V,IC=-10mA 100 MHz

Collector output capacitance Cob VCB=-10V,IE=0,f=1MHZ 6 pF

VCE=-6V,IC=-0.3mA,
Noise figure NF 20 dB
Rg=10kΩ,f=100HZ

CLASSIFICATION OF hFE
Rank R Q P K

Range 90-180 135-270 200-400 300-600

WEITRON 1/2 09-Dec-08


hpp://www.weitron.com.tw
A733
Ratings and Characteristic Curves

WEITRON 2/2 09-Dec-08


hpp://www.weitron.com.tw

WEITRON
hpp://www.weitron.com.tw
1/2
09-Dec-08
PNP Transistor
TO-92
A733
WEITRON
Lead(Pb)-Free
P b
1. EMITTER
2. COLLECTOR
3.
WEITRON
hpp://www.weitron.com.tw
2/2
09-Dec-08
A733
Ratings and Characteristic Curves

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