Advanced Power MOSFET IRF510A
FEATURES
BVDSS = 100 V
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
RDS(on) = 0.4 Ω
n Lower Input Capacitance ID = 5.6 A
n Improved Gate Charge
n Extended Safe Operating Area
n 175°C Operating Temperature
TO-220
n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V
n Lower RDS(ON) : 0.289 Ω (Typ.) 1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 100 V
Continuous Drain Current (TC=25℃) 5.6
ID A
Continuous Drain Current (TC=100℃) 4
IDM Drain Current-Pulsed (1) 20 A
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulsed Avalanche Energy (2) 63 mJ
IAR Avalanche Current (1) 5.6 A
EAR Repetitive Avalanche Energy (1) 3.3 mJ
dv/dt Peak Diode Recovery dv/dt (2) 6.5 V/ns
Total Power Dissipation (TC=25℃) 33 W
PD
Linear Derating Factor 0.22 W/°C
Operating Junction and
TJ , TSTG - 55 to +175
Storage Temperature Range
Maximum Lead Temp. for Soldering °C
TL 300
Purposes, 1/8? from case for 5-seconds
Thermal Resistance
Symbol Characteristic Typ. Max. Units
RθJC Junction-to-Case -- 4.51
RθCS Case-to-Sink 0.5 -- °C/W
RθJA Junction-to-Ambient -- 62.5
Rev. B1
N-CHANNEL
IRF510A POWER MOSFET
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol Characteristic Min. Typ. Max. Units Test Condition
BVDSS Drain-Source Breakdown Voltage 100 -- -- V VGS=0V,ID=250µA
ΔBV/ΔTJ Breakdown Voltage Temp. Coeff. -- 0.11 -- V/°C ID=250µA See Fig 7
VGS(th) Gate Threshold Voltage 2.0 -- 4.0 V VDS=5V,ID=250µA
Gate-Source Leakage , Forward -- -- 100 VGS=20V
IGSS nA
Gate-Source Leakage , Reverse -- -- -100 VGS=-20V
-- -- 10 VDS=100V
IDSS Drain-to-Source Leakage Current μA
-- -- 100 VDS=80V,TC=150°C
Static Drain-Source
RDS(on) -- -- 0.4 Ω VGS=10V,ID=2.8A
On-State Resistance (4)
gfs Forward Transconductance -- 3.49 -- S VDS=40V,ID=2.8A (4)
Ciss Input Capacitance -- 190 240
VGS=0V,VDS=25V,f =1MHz
Coss Output Capacitance -- 55 65 pF
See Fig 5
Crss Reverse Transfer Capacitance -- 21 25
td(on) Turn-On Delay Time -- 10 30
VDD=50V,ID=5.6A,
tr Rise Time -- 14 40
ns RG=24Ω
td(off) Turn-Off Delay Time -- 28 70
See Fig 13 (4)(5)
tf Fall Time -- 18 50
Qg Total Gate Charge -- 8.5 12 VDS=80V,VGS=10V,
Qgs Gate-Source Charge -- 1.6 -- nC ID=5.6A
Qgd Gate-Drain (“Miller”) Charge -- 4.1 -- See Fig 6 & Fig 12 (4)(5)
Source-Drain Diode Ratings and Characteristics
Symbol Characteristic Min. Typ. Max. Units Test Condition
IS Continuous Source Current -- -- 5.6 Integral reverse pn-diode
A
ISM Pulsed-Source Current (1) -- -- 20 in the MOSFET
VSD Diode Forward Voltage (4) -- -- 1.5 V TJ=25°C,IS=5.6A,VGS=0V
trr Reverse Recovery Time -- 85 -- ns TJ=25°C,IF=5.6A
Qrr Reverse Recovery Charge -- 0.23 -- µC diF/dt=100A/µs (4)
Notes ;
(1) Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
(2) L=3mH, IAS=5.6A, VDD=25V, RG=27Ω, Starting TJ =25°C
(3) ISD ≤ 5.6A, di/dt ≤ 250A/μs, VDD ≤ BVDSS , Starting TJ =25°C
(4) Pulse Test : Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temperature
N-CHANNEL
POWER MOSFET IRF510A
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
VGS
Top : 15V
101 10 V 101
8.0 V
7.0 V
ID , Drain Current [A]
ID , Drain Current [A]
6.0 V
5.5V
5.0 V
Bottom : 4.5V 175 oC
100 100
25 oC
@ Notes :
1. VGS = 0 V
@ Notes : 2. VDS = 40 V
1. 250 µs Pulse Test - 55 oC
3. 250 µs Pulse Test
2. TC = 25 oC
10-1 -1 10-1
10 100 101 2 4 6 8 10
VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage
0.8
101
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance
0.6 VGS = 10 V
RDS(on) , [ Ω ]
0.4
100
VGS = 20 V
0.2
@ Notes :
175 oC 1. VGS = 0 V
o o
@ Note : TJ = 25 C 25 C 2. 250 µs Pulse Test
0.0 10-1
0 5 10 15 20 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ID , Drain Current [A] VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage
350
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd VDS = 20 V
Crss= Cgd 10
280 VDS = 50 V
C iss
VGS , Gate-Source Voltage [V]
Capacitance [pF]
VDS = 80 V
210
C oss
140 @ Notes : 5
1. VGS = 0 V
C rss 2. f = 1 MHz
70
@ Notes : ID = 5.6 A
00 0
10 101 0 2 4 6 8 10
VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC]
N-CHANNEL
IRF510A POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature
Drain-Source Breakdown Voltage 1.2 3.0
2.5
Drain-Source On-Resistance
BVDSS , (Normalized)
RDS(on) , (Normalized)
1.1
2.0
1.0 1.5
1.0
0.9 @ Notes : @ Notes :
1. VGS = 0 V 1. VGS = 10 V
0.5
2. ID = 250 µA 2. ID = 2.8 A
0.8 0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200 -75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Junction Temperature [oC] TJ , Junction Temperature [oC]
Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature
102 6
Operation in This Area
is Limited by R DS(on)
5
ID , Drain Current [A]
101
100 µs ID , Drain Current [A] 4
1 ms
10 ms
3
DC
100 2
@ Notes :
1. TC = 25 oC
1
2. TJ = 175 oC
3. Single Pulse
10-1 0 0
10 101 102 25 50 75 100 125 150 175
VDS , Drain-Source Voltage [V] Tc , Case Temperature [oC]
Fig 11. Thermal Response
Thermal Response
D=0.5
@ Notes :
100 0.2 1. Zθ J C (t)=4.51 o C/W Max.
2. Duty Factor, D=t1 /t2
0.1 3. TJ M -TC =PD M *Zθ J C (t)
0.05
Z JC(t) ,
PDM
0.02
0.01 t1
10- 1 single pulse
t2
θ
10- 5 10- 4 10- 3 10- 2 10- 1 100 101
t1 , Square Wave Pulse Duration [sec]
N-CHANNEL
POWER MOSFET IRF510A
Fig 12. Gate Charge Test Circuit & Waveform
* Current Regulator ”
VGS
Same Type
50KΩ as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd
DUT
3mA
R1 R2
Current Sampling (IG) Current Sampling (ID)
Charge
Resistor Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout Vout
90%
Vin VDD
( 0.5 rated VDS )
RG
DUT 10%
Vin
10V
td(on) tr td(off)
tf
t on t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
1 BVDSS
LL EAS = ---- LL IAS2 --------------------
VDS 2 BVDSS -- VDD
Vary tp to obtain ID BVDSS
required peak ID IAS
RG C VDD ID (t)
DUT
VDD VDS (t)
10V
tp tp Time
N-CHANNEL
IRF510A POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT +
VDS
--
IS
L
Driver
VGS
RG Same Type
as DUT VDD
VGS • dv/dt controlled by “RG”
• IS controlled by Duty Factor “D”
Gate Pulse Width
VGS D = --------------------------
Gate Pulse Period 10V
( Driver )
IFM , Body Diode Forward Current
IS
( DUT ) di/dt
IRM
Body Diode Reverse Current
VDS
( DUT ) Body Diode Recovery dv/dt
Vf VDD
Body Diode
Forward Voltage Drop
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx FAST â MICROWIRE SILENT SWITCHER â UHC
Bottomless FASTr OPTOLOGIC â SMART START UltraFET â
CoolFET FRFET OPTOPLANAR SPM VCX
CROSSVOLT GlobalOptoisolator PACMAN STAR*POWER
DenseTrench GTO POP Stealth
DOME HiSeC Power247 SuperSOT-3
EcoSPARK I2C PowerTrench â SuperSOT-6
E2CMOSTM ISOPLANAR QFET SuperSOT-8
EnSignaTM LittleFET QS SyncFET
FACT MicroFET QT Optoelectronics TinyLogic
FACT Quiet Series MicroPak Quiet Series TruTranslation
STAR*POWER is used under license
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H5
