MCC 162

MCD 162

Thyristor Modules ITRMS = 2x 300 A

Thyristor/Diode Modules ITAVM = 2x 190 A
VRRM = 800-1800 V

3 6 7
VRSM VRRM Type 2 4
5
VDSM VDRM 1

V V Version 1 Version 1

900 800 MCC 162-08io1 MCD 162-08io1

1300 1200 MCC 162-12io1 MCD 162-12io1
1500 1400 MCC 162-14io1 MCD 162-14io1
1700 1600 MCC 162-16io1 MCD 162-16io1
1900 1800 MCC 162-18io1 MCD 162-18io1
3 6 7 1 5 4 2

Symbol Test Conditions Maximum Ratings MCC

ITRMS, IFRMS TVJ = TVJM 300 A
ITAVM, IFAVM TC = 80°C; 180° sine 190 A 3 1 5 4 2
TC = 85°C; 180° sine 181 A
ITSM, IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 6000 A
MCD
VR = 0 t = 8.3 ms (60 Hz), sine 6400 A
TVJ = TVJM t = 10 ms (50 Hz), sine 5250 A
VR = 0 t = 8.3 ms (60 Hz), sine 5600 A
òi2dt TVJ = 45°C t = 10 ms (50 Hz), sine 180 000 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 170 000 A2s Features
TVJ = TVJM t = 10 ms (50 Hz), sine 137 000 A2s ●
International standard package
VR = 0 t = 8.3 ms (60 Hz), sine 128 000 A2s ●
Direct copper bonded Al2O3 -ceramic
base plate
(di/dt)cr TVJ = TVJM repetitive, IT = 500 A 150 A/ms ●
Planar passivated chips
f =50 Hz, tP =200 ms ●
Isolation voltage 3600 V~
VD = 2/3 VDRM ●
UL registered, E 72873
IG = 0.5 A non repetitive, IT = 500 A 500 A/ms ●
Keyed gate/cathode twin pins
diG/dt = 0.5 A/ms
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/ms Applications
RGK = ¥; method 1 (linear voltage rise) ●
Motor control
PGM TVJ = TVJM tP = 30 ms 120 W
●
Power converter
●
Heat and temperature control for
IT = ITAVM tP = 500 ms 60 W
industrial furnaces and chemical
PGAV 8 W processes
VRGM 10 V ●
Lighting control
●
Contactless switches
TVJ -40...+125 °C
TVJM 125 °C Advantages
Tstg -40...+125 °C ●
Space and weight savings
VISOL 50/60 Hz, RMS t = 1 min 3000 V~ ●
Simple mounting
IISOL £ 1 mA t=1s 3600 V~
●
Improved temperature and power
cycling
Md Mounting torque (M6) 2.25-2.75/20-25 Nm/[Link]. ●
Reduced protection circuits
Terminal connection torque (M6) 4.5-5.5/40-48 Nm/[Link].
Weight Typical including screws 125 g

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions

© 2000 IXYS All rights reserved 1-4

 MCC 162
MCD 162

Symbol Test Conditions Characteristic Values

IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM 10 mA
VT, VF IT, IF = 300 A; TVJ = 25°C 1.25 V
VT0 For power-loss calculations only (TVJ = 125°C) 0.88 V
rT 1.15 mW
VGT VD = 6 V; TVJ = 25°C 2.5 V
TVJ = -40°C 2.6 V
IGT VD = 6 V; TVJ = 25°C 150 mA
TVJ = -40°C 200 mA
VGD TVJ = TVJM; VD = 2/3 VDRM 0.2 V
IGD 10 mA
IL TVJ = 25°C; tP = 30 ms; VD = 6 V 300 mA
IG = 0.5 A; diG/dt = 0.5 A/ms
IH TVJ = 25°C; VD = 6 V; RGK = ¥ 200 mA
tgd TVJ = 25°C; VD = 1/2 VDRM 2 ms
IG = 0.5 A; diG/dt = 0.5 A/ms
Fig. 1 Gate trigger characteristics
tq TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms typ. 150 ms
VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 VDRM
QS TVJ = TVJM; IT, IF = 300 A, -di/dt = 50 A/ms 550 mC
IRM 235 A
RthJC per thyristor/diode; DC current 0.155 K/W
per module other values 0.0775 K/W
RthJK per thyristor/diode; DC current see Fig. 8/9 0.225 K/W
per module 0.1125 K/W
dS Creepage distance on surface 12.7 mm
dA Strike distance through air 9.6 mm
a Maximum allowable acceleration 50 m/s2

Optional accessories for modules

Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385,
Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1

Fig. 2 Gate trigger delay time

Dimensions in mm (1 mm = 0.0394")

MCC Version 1 MCD Version 1

© 2000 IXYS All rights reserved 2-4

 MCC 162
MCD 162

Fig. 3 Surge overload current Fig. 4 òi2dt versus time (1-10 ms) Fig. 4a Maximum forward current
ITSM, IFSM: Crest value, t: duration at case temperature

Fig. 5 Power dissipation versus on-

state current and ambient
temperature (per thyristor or
diode)

Fig. 6 Three phase rectifier bridge:

Power dissipation versus direct
output current and ambient
temperature

© 2000 IXYS All rights reserved 3-4

 MCC 162
MCD 162

Fig. 7 Three phase AC-controller:

Power dissipation versus RMS
output current and ambient
temperature

Fig. 8 Transient thermal impedance

junction to case (per thyristor or
diode)
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.155
180° 0.167
120° 0.176
60° 0.197
30° 0.227

Constants for ZthJC calculation:

i Rthi (K/W) ti (s)
1 0.0072 0.001
2 0.0188 0.08
3 0.129 0.2

Fig. 9 Transient thermal impedance

junction to heatsink (per thyristor
or diode)
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.225
180° 0.237
120° 0.246
60° 0.267
30° 0.297

Constants for ZthJK calculation:

i Rthi (K/W) ti (s)
1 0.0072 0.001
2 0.0188 0.08
3 0.129 0.2
4 0.07 1.0

© 2000 IXYS All rights reserved 4-4