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Silicon NPN Power Transistors: 2SC3298 2SC3298A 2SC3298B

The document provides product specifications for SavantIC Semiconductor's silicon NPN power transistors models 2SC3298, 2SC3298A, and 2SC3298B. The transistors come in a TO-220Fa package and are intended for power amplifier and driver stage amplifier applications. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and collector current. Electrical characteristics such as collector-emitter saturation voltage, base-emitter voltage, current gain, and transition frequency are also specified.

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115 views3 pages

Silicon NPN Power Transistors: 2SC3298 2SC3298A 2SC3298B

The document provides product specifications for SavantIC Semiconductor's silicon NPN power transistors models 2SC3298, 2SC3298A, and 2SC3298B. The transistors come in a TO-220Fa package and are intended for power amplifier and driver stage amplifier applications. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and collector current. Electrical characteristics such as collector-emitter saturation voltage, base-emitter voltage, current gain, and transition frequency are also specified.

Uploaded by

javier ventura
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3298 2SC3298A 2SC3298B

DESCRIPTION
·With TO-220Fa package
·Complement to type
2SA1306,2SA1306A,2SA1306B

APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector

3 Emitter

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

2SC3298 160

VCBO Collector-base voltage 2SC3298A Open emitter 180 V

2SC3298B 200

2SC3298 160

VCEO Collector-emitter voltage 2SC3298A Open base 180 V

2SC3298B 200

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 1.5 A

IB Base current 0.15 A

PC Collector power dissipation TC=25 20 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3298 2SC3298A 2SC3298B

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

2SC3298 160

Collector-emitter
V(BR)CEO 2SC3298A IC=10mA , IB=0 180 V
breakdown voltage

2SC3298B 200

VCEsat Collector-emitter saturation voltage IC=0.5A, IB=50mA 1.5 V

VBE Base-emitter voltage IC=0.5A ,VCE=5V 1.0 V

ICBO Collector cut-off current VCB=160V, IE=0 1.0 µA

IEBO Emitter cut-off current VEB=5V; IC=0 1.0 µA

hFE DC current gain IC=0.1A ; VCE=5V 70 240

Cob Output capacitance IE=0 ; VCB=10V,f=1MHz 25 pF

fT Transition frequency IC=0.1A ; VCE=10V 100 MHz

hFE Classifications

O Y

70-140 120-240

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3298 2SC3298A 2SC3298B

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

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