SHINDENGEN

HVX-2 Series Power MOSFET N-Channel Enhancement type

2SK2333 OUTLINE DIMENSIONS

Case : FTO-220
( F6F70HVX2 ) (Unit : mm)

700V 6A

FEATURES
Input capacitance (Ciss) is small.
Especially, input capacitance
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at 0 biass is small.
The static Rds(on) is small.
The switching time is fast.
Avalanche resistance guaranteed.

APPLICATION
Switching power supply of AC 240V input
High voltage power supply
Inverter

RATINGS
œAbsolute Maximum Ratings iTc = 25Žj
Item Symbol Conditions Ratings Unit
Storage Temperature T stg -55`150 Ž
Channel Temperature T ch 150
Drain-Source Voltage VDSS 700 V
Gate-Source Voltage VGSS }30
Continuous Drain CurrentiDCj ID 6
Continuous Drain CurrentiPeak) I DP Pulse width…10Ês, Duty cycle…1/100 18 A
Continuous Source CurrentiDCj IS 6
Total Power Dissipation PT 50 W
Repetitive Avalanche Current I AR T ch = 150Ž 6 A
Single Avalanche Energy EAS T ch = 25Ž 190 mJ
Repetitive Avalanche Energy EAR T ch = 25Ž 19
Dielectric Strength Vdis Terminals to case,@AC 1 minute 2 kV
Mounting Torque TOR i Recommended torque F0.3 N¥m j 0.5 N¥m

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

 HVX-2 Series Power MOSFET 2SK2333 ( F6F70HVX2 )

œElectrical Characteristics Tc = 25Ž

Item Symbol Conditions Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V(BR)DSS I D = 1mA, VGS = 0V 700 V
Zero Gate Voltage Drain Current I DSS VDS = 700V, VGS = 0V 250 ÊA
Gate-Source Leakage Current I GSS VGS = }30V, VDS = 0V }0. 1
Forward TraŽ“conductance gfs I D = 3A, VDS = 10V 3. 0 5. 0 S
Static Drain-Source On-“tate Resistance RDS(ON) I D = 3A, VGS = 10V 1. 5 2. 0 ¶
Gate Threshold Voltage VTH I D = 1mA, VDS = 10V 2. 5 3. 0 3. 5 V
Source-Drain Diode Forward Voltage VSD I S = 3A, VGS = 0V 1. 5
Thermal Resistance Æjc junction to case 2. 5 Ž/v
Total Gate Charge Qg VDD = 400V, VGS = 10V, I D = 6A 35 nC
Input Capacitance Ciss 1250
Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V, f = 1MHZ 250 pF
Output Capacitance C oss 530
Turn-On Time
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Turn-Off Time toff 160 250

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

 2SK2333 Transfer Characteristics

Tc = −55°C
16

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25°C
Drain Current ID [A]

12

100°C

8
150°C

VDS = 25V
pulse test
TYP
0
0 5 10 15 20

Gate-Source Voltage VGS [V]

 2SK2333 Static Drain-Source On-state Resistance
10
Static Drain-Source On-state Resistance RDS(ON) [Ω]

ID = 3A
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0.1

VGS = 10V
pulse test
TYP
0.01
-50 0 50 100 150
Case Temperature Tc [°C]
 2SK2333 Gate Threshold Voltage
5

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4
Gate Threshold Voltage VTH [V]

VDS = 10V
ID = 1mA
TYP
0
-50 0 50 100 150

Case Temperature Tc [°C]

 2SK2333 Safe Operating Area
100

10
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Drain Current ID [A]

100µs

200µs

1
R DS(ON) 1ms
limit

10ms

0.1
DC

Tc = 25°C
Single Pulse

0.01
1 10 100 1000
Drain-Source Voltage VDS [V]
 2SK2333 Transient Thermal Impedance

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10

0.1

0.01

Transient Thermal Impedance θjc(t) [°C/W]

0.001
10-4 10-3 10-2 10-1 100 101 102

Time t [s]
 2SK2333 Single Avalanche Energy Derating
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100
Single Avalanche Energy Derating [%]

80

60

40

20

0
0 50 100 150
Starting Channel Temperature Tch [°C]
 2SK2333 Capacitance
10000

Ciss
1000
Capacitance Ciss Coss Crss [pF]

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Coss
100

Crss

10

Tc=25°C
TYP
1
0 20 40 60 80 100

Drain-Source Voltage VDS [V]

 2SK2333 Single Avalanche Current - Inductive Load

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VDD = 100V
VGS = 15V → 0V
Rg = 100Ω

10 IAS = 6A

EAS = 190mJ
EAR = 19mJ

Single Avalanche Current IAS [A]

0.1
0.1 1 10 100

Inductance L [mH]
 2SK2333 Power Derating
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100

80
Power Derating [%]

60

40

20

0
0 50 100 150
Case Temperature Tc [°C]
 2SK2333 Gate Charge Characteristics
500 20

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VDS
400
Drain-Source Voltage VDS [V]

Gate-Source Voltage VGS [V]

15
VDD = 400V

300 200V
100V
VGS
10

200

5
100

ID = 6A

0 0
0 10 20 30 40 50

Gate Charge Qg [nC]