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Power Transistors for Engineers

The document summarizes the specifications of the BD204 silicon PNP power transistor from SavantIC Semiconductor. It has a TO-220C package, is intended for medium power switching and amplifier applications, and has characteristics like low saturation voltage, wide safe operating area, and DC current gain of 30. Key parameters including maximum ratings, thermal characteristics, electrical characteristics, and package outline are provided.

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93 views3 pages

Power Transistors for Engineers

The document summarizes the specifications of the BD204 silicon PNP power transistor from SavantIC Semiconductor. It has a TO-220C package, is intended for medium power switching and amplifier applications, and has characteristics like low saturation voltage, wide safe operating area, and DC current gain of 30. Key parameters including maximum ratings, thermal characteristics, electrical characteristics, and package outline are provided.

Uploaded by

rolandse
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors BD204

DESCRIPTION ·
www.datasheet4u.com
·With TO-220C package
·Low saturation voltage
·Complement to type BD203
·Wide area of safe operation

APPLICATIONS
·For medium power switching and
amplifier applications

PINNING

PIN DESCRIPTION

1 Emitter

Collector;connected to
2
mounting base

3 Base

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -60 V

VCEO Collector-emitter voltage Open base -60 V

VEBO Emitter -base voltage Open collector -5 V

IC Collector current (DC) -8 A

ICM Collector current-Peak -12 A

IB Base current -3 A

PT Total power dissipation TC=25 60 W

Tj Junction temperature 150

Tstg Storage temperature -65~150

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-C Thermal resistance junction to case 2.08 /W


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors BD204

CHARACTERISTICS
www.datasheet4u.com
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-0.2A ;IB=0 -60 V

V(BR)CBO Collector-base breakdown voltage IC=-1mA ; IE=0 -60 V

V(BR)EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -5 V

VCEsat-1 Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.0 V

VCEsat-2 Collector-emitter saturation voltage IC=-6A; IB=-0.6A -1.5 V

VBEsat Base-emitter saturation voltage IC=-6A; IB=-0.6A -2.0 V

ICEO Collector cut-off current VCE=-30V ;IB=0; -0.2 mA

ICBO Collector cut-off current VCB=-40V ;IE=0;Tj=150 -1.0 mA

IEBO Emitter cut-off current VEB=-5V; IC=0 -0.5 mA

hFE DC current gain IC=-2A ; VCE=-2V 30

fT Transition frequency IC=-0.3A ; VCE=-3V 7.0 MHz

VBE Base-emitter on voltage IC=-3A;VCE=-2V -1.5 V

2
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors BD204

PACKAGE OUTLINE

www.datasheet4u.com

Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

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