EE 18301 ELECTRON DEVICES AND
CIRCUITS
(Regulations 2018)
Lecture BOOK Notes (V 1.0)
Prepared and Compiled
By
S.Anitha / Asssistant Professor
R.Karthikeyan / Associate Professor
Department of Electrical and Electronics Engineering
Sri Venkateswara College of Engineering
(Autonomous, Affiliated to Anna University, Chennai)
Sriperumbudur – 602117
EE 18301 ELECTRON DEVICES
AND CIRCUITS
(Regulations 2018)
Lecture Notes (V 1.0)
Unit I SEMICONDUCTOR DIODES
Prepared and Compiled
By
S.Anitha / Asssistant Professor
R.Karthikeyan / Associate Professor
Department of Electrical and Electronics Engineering
Sri Venkateswara College of Engineering
(Autonomous, Affiliated to Anna University, Chennai)
Sriperumbudur – 602117
EE18301 ELECTRON DEVICES AND CIRCUITS LTPC
3003
OBJECTIVES:
To be familiar with the theory, construction, and operation of basic electronic devices.
To introduce the concept of amplifier and Oscillators
UNIT I SEMICONDUCTOR DIODES 9
PN junction diode – Static V-I characteristics and parameters – Current equation – Diode
equivalent circuits – Space charge/Transition capacitance and Diffusion capacitance – Reverse
recovery time – Temperature effects.
Applications of PN junction diode: Rectifiers: Single phase half wave and full wave rectifiers –
clippers – clampers Voltage doubler and voltage tripler circuit
Zener and Avalanche breakdown mechanisms – Zener diodes – Forward and Reverse
characteristics– Voltage regulation phenomenon.
Applications of Zener diode: Operation of basic Zenerdiode shunt regulator – Line and Load
voltage regulations.
UNIT II BIPOLAR JUNCTION TRANSISTORS 9
Introduction to Bipolar Junction Transistor – Construction and operation of transistor-Transistor
voltages and currents – Modes of operation – Different types of configuration- Input and Output
characteristics – Thermal runaway and Stabilization – AC and DC load lines – Need for biasing a
Transistor and various biasing techniques – BJT small signal model – Analysis of CE, CB, CC
amplifiers –Determination of h parameters.
UNIT III FIELD EFFECT TRANSISTORS 9
Construction, Principle of operation of N channel and P channel JFET‟s – Drain and Transfer
characteristics – Expression for drain current – Construction, Principle of operation of
Enhancement type and Depletion type MOSFET‟s – Drain and Transfer characteristics –
Handling precautions of MOSFET – Biasing circuits for JFET and MOSFET – VMOS and
CMOS transistors – Small signal model of FET/MOSFET – Analysis of CS, CG and Source
follower – Comparison of FET and BJT.
UNIT IV MULTISTAGE & FEEDBACK AMPLIFIERS 9
Two stage RC coupled amplifier –Analysis of Differential amplifier – Common mode,
Differential mode & CMRR – Single tuned amplifiers – Gain and frequency response –
Neutralization methods, power amplifiers –Types (Qualitative analysis).
Advantages of negative feedback – Analysis of Voltage / Current, Series, Shunt feedback
Amplifiers using transistor
UNIT V OSCILLATORS AND OPTOELECTRONIC DEVICES 9
Positive feedback – Condition for oscillations, phase shift – Wien bridge, Hartley, Colpitts and
Crystal oscillators.
Construction, Operation and Characteristics of Optoelectronic devices: LED, LCD, Photo
diode, Photo transistor, Opto-Coupler and Solar Cell.
TOTAL: 45 PERIODS
OUTCOMES
Describe and analyse different types of PN devices.
Describe and analyse different types of current and voltage controlled devices
Analyse performance of devices using small signal model
Design and implement various electronic devices in circuits
TEXT BOOKS
1. David A Bell, “Electronic Devices and Circuits”, Oxford university press, 2008.
2. Boylestead L R and Nashelsky L, "Electronic Devices and Circuit theory", Pearson Prentice
Hall, New Delhi, 2009.
REFERENCES
1. Thomas L Floyd, "Electronic Devices", prentice hall of India, New Delhi, 2007.
2. Floyd, Buchla, “Fundamentals of Analog Circuits”, Pearson, 2013
3. Donald A Neamen, “Electronic Circuit Analysis and Design” Tata McGraw Hill, 3rd
Edition, 2003.
4. G.K.Mithal, “Electronic devices and circuits”, Khanna Publishers, New Delhi, 2010.
5. Millman J, Christos C Halkias, SatyabatraJit, "Electronic devices and circuits", Tata
McGraw-Hill Publishing Company Ltd., New Delhi, 2008.
6. Theodore F Bogart Jr, Jefffrey S Beasley, Guillermo Rico‟ “Electronic devices and
circuits”, Prentice Hall of India, New Delhi, 2004.
EE18301 ELECTRON DEVICES AND CIRCUITS
Unit I SEMICONDUCTOR DIODES
Syllabus Help
Sl Book
Topic in syllabus Chapter Section Pages Remarks
No. reference
1 PN junction diode 1 1-6 20 to 22 1 Bell
1 6 10 to 13 2 Boyle
2 Static V-I characteristics 2 2.23 105 to 107 3 Lal
3 Diode parameters 2 2-2 37 to 38 1 Bell
4 Current equation 2 2.22 104 to 105 3 Lal
5 Diode equivalent circuits 2 2-3 41 1 Bell
2 2-6 51 to 52 1 Bell
6 Space charge/Transition 2 2.25 108 to 109 3 Lal
capacitance
7 Diffusion capacitance 2 2.26 111 to 113 3 Lal
8 Reverse recovery time 2 2-6 52 to 53 1 Bell
9 Temperature effects 2 2-5 47 to 49 1 Bell
10 Rectifiers: Single phase half wave 2 6 74 to 76 2 Boyle
rectifier
11 Rectifiers: Single phase full wave 2 2-2 56 to 57 4 Flyod
rectifiers 2 7 77 to 79 2 Boyle
12 Clippers 3 3-8 113 to 114 1 Bell
3 3-9 116 to 118 1 Bell
13 Clampers 2 2-4 74 to 75 4 Flyod
3 3-10 125 1 Bell
14 Voltage doubler circuit 2 12 100 to 102 2 Boyle
15 Voltage tripler circuit 2 12 102 to 103 2 Boyle
16 Zener and Avalanche breakdown 2 2.28.1 119 3 Lal
mechanisms 2 2.28.2 119 3 Lal
17 Zener diodes 2 2.9 2.29 5 Sali
2 2-9 60 1 Bell
18 Zener diodes - Forward and 2 2-9 61 to 62 1 Bell
Reverse characteristics
19 Zener diodes - Voltage regulation 2 2.11 2.30 5 Sali
phenomenon
20 Operation of basic Zener diode 3 3.12.1 175 3 Lal
shunt regulator
21 Line and Load voltage regulations 3 3.13 182 3 Lal
Book References
Book Reference 1 Book Reference 2 Book Reference 3
Book Reference 4 Book Reference 5
EE18301 ELECTRON DEVICES AND CIRCUITS
Unit I SEMICONDUCTOR DIODES
PN junction diode
Static V-I characteristics
Diode parameters
• Maximum Forward Current : It is the highest instantaneous current under forward-bias condition
that can flow through the junction.
• Peak Inverse Voltage (PIV): It is the maximum reverse voltage that can be applied to the PN
junction. If the voltage across the junction exceeds PIV under reverse-bias condition, the junction gets
damaged.
• Maximum Power Rating: It is the maximum power that can be dissipated at the junction without
damaging the junction. Power dissipation is the product of voltage across the junction and current
through the junction.
Current equation
Diode equivalent circuits
Space charge/Transition
capacitance and Diffusion
capacitance
Reverse recovery time
Temperature effects
Rectifiers: Single phase half
wave rectifier
Rectifiers: Single phase full
wave rectifiers
Clippers
Clampers
Voltage doubler circuit
Voltage Tripler Circuit
Zener and Avalanche
breakdown mechanisms
Zener diodes
Zener diodes - Forward and
Reverse characteristics
Zener diodes - Voltage
regulation phenomenon
Operation of basic Zener diode
shunt regulator
Line and Load voltage
regulation
EE 18301 ELECTRON DEVICES AND
CIRCUITS
(Regulations 2018)
Lecture Notes (V 1.0)
Unit II BIPOLAR JUNCTION TRANSISTORS
Prepared and Compiled
By
S.Anitha / Asssistant Professor
R.Karthikeyan / Associate Professor
Department of Electrical and Electronics Engineering
Sri Venkateswara College of Engineering
(Autonomous, Affiliated to Anna University, Chennai)
Sriperumbudur – 602117
EE18301 ELECTRON DEVICES AND CIRCUITS LTPC
3003
OBJECTIVES:
To be familiar with the theory, construction, and operation of basic electronic devices.
To introduce the concept of amplifier and Oscillators
UNIT I SEMICONDUCTOR DIODES 9
PN junction diode – Static V-I characteristics and parameters – Current equation – Diode equivalent
circuits – Space charge/Transition capacitance and Diffusion capacitance – Reverse recovery time –
Temperature effects.
Applications of PN junction diode: Rectifiers: Single phase half wave and full wave rectifiers –
clippers – clampers Voltage doubler and voltage tripler circuit
Zener and Avalanche breakdown mechanisms – Zener diodes – Forward and Reverse characteristics–
Voltage regulation phenomenon.
Applications of Zener diode: Operation of basic Zener diode shunt regulator – Line and Load
voltage regulations.
UNIT II BIPOLAR JUNCTION TRANSISTORS 9
Introduction to Bipolar Junction Transistor – Construction and operation of transistor-Transistor
voltages and currents – Modes of operation – Different types of configuration- Input and Output
characteristics – Thermal runaway and Stabilization – AC and DC load lines – Need for biasing a
Transistor and various biasing techniques – BJT small signal model – Analysis of CE, CB, CC
amplifiers –Determination of h parameters.
UNIT III FIELD EFFECT TRANSISTORS 9
Construction, Principle of operation of N channel and P channel JFET‟s – Drain and Transfer
characteristics – Expression for drain current – Construction, Principle of operation of Enhancement
type and Depletion type MOSFET‟s – Drain and Transfer characteristics –Handling precautions of
MOSFET – Biasing circuits for JFET and MOSFET – VMOS and CMOS transistors – Small signal
model of FET/MOSFET – Analysis of CS, CG and Source follower – Comparison of FET and BJT.
UNIT IV MULTISTAGE & FEEDBACK AMPLIFIERS 9
Two stage RC coupled amplifier –Analysis of Differential amplifier – Common mode, Differential
mode & CMRR – Single tuned amplifiers – Gain and frequency response – Neutralization methods,
power amplifiers –Types (Qualitative analysis).
Advantages of negative feedback – Analysis of Voltage / Current, Series, Shunt feedback Amplifiers
using transistor
UNIT V OSCILLATORS AND OPTOELECTRONIC DEVICES 9
Positive feedback – Condition for oscillations, phase shift – Wien bridge, Hartley, Colpitts and
Crystal oscillators.
Construction, Operation and Characteristics of Optoelectronic devices: LED, LCD, Photo diode,
Photo transistor, Opto-Coupler and Solar Cell.
TOTAL: 45 PERIODS
OUTCOMES
signal model
TEXT BOOKS
1. David A Bell, “Electronic Devices and Circuits”, Oxford university press, 2008.
2. Boylestead L R and Nashelsky L, "Electronic Devices and Circuit theory", Pearson Prentice Hall,
New Delhi, 2009.
REFERENCES
1. Thomas L Floyd, "Electronic Devices", prentice hall of India, New Delhi, 2007.
2. Floyd, Buchla, “Fundamentals of Analog Circuits”, Pearson, 2013
3. Donald A Neamen, “Electronic Circuit Analysis and Design” Tata McGraw Hill, 3rd Edition,
2003.
4. G.K.Mithal, “Electronic devices and circuits”, Khanna Publishers, New Delhi, 2010.
5. Millman J, Christos C Halkias, SatyabatraJit, "Electronic devices and circuits", Tata
McGraw-Hill Publishing Company Ltd., New Delhi, 2008.
6. Theodore F Bogart Jr, Jefffrey S Beasley, Guillermo Rico‟ “Electronic devices and
circuits”, Prentice Hall of India, New Delhi, 2004.
EE18301 ELECTRON DEVICES AND CIRCUITS
Unit II BIPOLAR JUNCTION TRANSISTORS
Syllabus Help
Sl Book
Topic in syllabus Chapter Section Pages Remarks
No. reference
1 Introduction to Bipolar Junction 4 4.1 186 5 Lal
Transistor
2 Construction and operation of 4 4-1 166 3 Flyod
transistor 4 4.2 190 to 191 5 Lal
3 3 134 to 135 4 Boyle
3 Transistor voltages and currents 4 4.1.1 186 to 189 5 Lal
4.1.2
4 Modes of operation 4 4.2.2 4.2 to 4.3 6 Sali
4.2.3
4.2.4
4 4-3 170 3 Flyod
5 Different types of configuration 4 4.4 4.7 Sali
6 Input and Output characteristics 4 4.4.1 192 to 194 5 Lal
4 4.4.2 4.10 to 4.13 6 Sali
4 4.4.3 200 to 202 5 Lal
7 Thermal runaway 10 10-10 288 to 290 2 Millman
8 Stabilization 10 264 2 Figure
10-1
10.2 265 to 268 2 Millman
5 5.7 to 5.8 6 Sali
9 AC and DC load lines 5 5.3 5.2 to 5.3 6 Sali
10 Need for biasing a Transistor 5 5.2 5.1 to 5.2 6 Sali
11 Various biasing techniques 5 5.4 5.8 , 5.10 6 Sali
,5.11 ,5.13,
5.16,5.17
12 BJT small signal model 5 3 262 to 265 4 Boyle
6 265 to 266 3 Flyod
6 6.1,6.2 314 to 318 5 Lal
13 Analysis of CE amplifier 6 6-4 254 to 258 1 Bell
14 Analysis of CB amplifier 6 6-7 268 to 271 1 Bell
15 Analysis of CC amplifier 6 6-6 263 to 267 1 Bell
16 Determination of h parameters 6 6.4,6.5, 318 to 322 5 Lal
6.6
6.9 325 to 326 5 Lal
Book Reference 1 Book Reference 2 Book Reference 3
Book Reference 4 Book Reference 5 Book Reference 6
EE18301 ELECTRON DEVICES AND CIRCUITS
Unit II BIPOLAR JUNCTION TRANSISTORS
Introduction to Bipolar Junction Transistor
Construction and operation of transistor
Transistor voltages and currents
Modes of operation
Different types of configuration
Input and Output characteristics
Thermal runaway
Stabilization
AC and DC load lines
Need for biasing a Transistor
Various biasing techniques
BJT small signal model
Analysis of CE amplifier
Analysis of CB amplifier
Analysis of CC amplifier
Determination of h parameters
EE 18301 ELECTRON DEVICES AND
CIRCUITS
(Regulations 2018)
Lecture Notes (V 1.0)
Unit III FIELD EFFECT TRANSISTORS
Prepared and Compiled
By
S.Anitha / Asssistant Professor
R.Karthikeyan / Associate Professor
Department of Electrical and Electronics Engineering
Sri Venkateswara College of Engineering
(Autonomous, Affiliated to Anna University, Chennai)
Sriperumbudur – 602117
EE18301 ELECTRON DEVICES AND CIRCUITS LTPC
3003
OBJECTIVES:
To be familiar with the theory, construction, and operation of basic electronic devices.
To introduce the concept of amplifier and Oscillators
UNIT I SEMICONDUCTOR DIODES 9
PN junction diode – Static V-I characteristics and parameters – Current equation – Diode equivalent
circuits – Space charge/Transition capacitance and Diffusion capacitance – Reverse recovery time –
Temperature effects.
Applications of PN junction diode: Rectifiers: Single phase half wave and full wave rectifiers –
clippers – clampers Voltage doubler and voltage tripler circuit
Zener and Avalanche breakdown mechanisms – Zener diodes – Forward and Reverse characteristics–
Voltage regulation phenomenon.
Applications of Zener diode: Operation of basic Zenerdiode shunt regulator – Line and Load
voltage regulations.
UNIT II BIPOLAR JUNCTION TRANSISTORS 9
Introduction to Bipolar Junction Transistor – Construction and operation of transistor-Transistor
voltages and currents – Modes of operation – Different types of configuration- Input and Output
characteristics – Thermal runaway and Stabilization – AC and DC load lines – Need for biasing a
Transistor and various biasing techniques – BJT small signal model – Analysis of CE, CB, CC
amplifiers –Determination of h parameters.
UNIT III FIELD EFFECT TRANSISTORS 9
Construction, Principle of operation of N channel and P channel JFET‟s – Drain and Transfer
characteristics – Expression for drain current – Construction, Principle of operation of Enhancement
type and Depletion type MOSFET‟s – Drain and Transfer characteristics –Handling precautions of
MOSFET – Biasing circuits for JFET and MOSFET – VMOS and CMOS transistors – Small signal
model of FET/MOSFET – Analysis of CS, CG and Source follower – Comparison of FET and BJT.
UNIT IV MULTISTAGE & FEEDBACK AMPLIFIERS 9
Two stage RC coupled amplifier –Analysis of Differential amplifier – Common mode, Differential
mode & CMRR – Single tuned amplifiers – Gain and frequency response – Neutralization methods,
power amplifiers –Types (Qualitative analysis).
Advantages of negative feedback – Analysis of Voltage / Current, Series, Shunt feedback Amplifiers
using transistor
UNIT V OSCILLATORS AND OPTOELECTRONIC DEVICES 9
Positive feedback – Condition for oscillations, phase shift – Wien bridge, Hartley, Colpitts and
Crystal oscillators.
Construction, Operation and Characteristics of Optoelectronic devices: LED, LCD, Photo diode,
Photo transistor, Opto-Coupler and Solar Cell.
TOTAL: 45 PERIODS
OUTCOMES
nd voltage controlled devices
TEXT BOOKS
1. David A Bell, “Electronic Devices and Circuits”, Oxford university press, 2008.
2. Boylestead L R and Nashelsky L, "Electronic Devices and Circuit theory", Pearson Prentice Hall,
New Delhi, 2009.
REFERENCES
1. Thomas L Floyd, "Electronic Devices", prentice hall of India, New Delhi, 2007.
2. Floyd, Buchla, “Fundamentals of Analog Circuits”, Pearson, 2013
3. Donald A Neamen, “Electronic Circuit Analysis and Design” Tata McGraw Hill, 3rd Edition,
2003.
4. G.K.Mithal, “Electronic devices and circuits”, Khanna Publishers, New Delhi, 2010.
5. Millman J, Christos C Halkias, SatyabatraJit, "Electronic devices and circuits", Tata
McGraw-Hill Publishing Company Ltd., New Delhi, 2008.
6. Theodore F Bogart Jr, Jefffrey S Beasley, Guillermo Rico‟ “Electronic devices and
circuits”, Prentice Hall of India, New Delhi, 2004.
EE18301 ELECTRON DEVICES AND CIRCUITS
Unit III FIELD EFFECT TRANSISTORS
Syllabus Help
Sl Chapter Book
Topic in syllabus Section Pages Remarks
No. reference
1 Construction of N channel and P 6 2 389 to 395 1 Boyle
channel JFETs
2 Principle of operation of N 6 2 1
channel and P channel JFETs
3 Drain characteristics 6 2 1
4 Transfer characteristics 6 3 396 to 397 1 Boyle
5 Expression for drain current 4 4.14.1 4.37 to 4.38 2 Sali
to 2
Construction, Principle of
6 operation of Enhancement type 6 8 412 to 417 1
Boyle
MOSFET, Drain characteristics,
Transfer characteristics
Construction, Principle of
operation of Depletion type
7 6 7 406 to 410 1 Boyle
MOSFET
Drain characteristics
Transfer characteristics
8 Handling precautions of MOSFET 9 375 3 Bell
9 Biasing circuits for JFET 10 10-1 to 381 to 395 3 Bell
10-4
10 Biasing circuits for MOSFET 10 10-10 417 to 420 3 Bell
11 VMOS transistor 6 10 420 to 421 1 Boyle
12 CMOS transistor 6 11 421 to 422 1 Boyle
13 Small signal model of FET 12 12-7 277,278 4 Bell(old)
14 Small signal model of MOSFET 6 314 to 319 5 Neaman
15 Analysis of CS configuration 14 14-2 308 to 313 4 Bell(old)
,14-3
16 Analysis of CG configuration 14 14-6 318 to 322 4 Bell(old)
17 Analysis of Source follower 14 14-4 313 to 317 4 Bell(old)
18 Comparison of FET and BJT 4 4.14.4 4.41 2 Sali
Book Reference 3 Book Reference 1 Book Reference 2
Book Reference 4 Book Reference 5
Construction and Principle of operation
of N channel and P channel JFETs and
Drain characteristics
Transfer characteristics
Expression for drain current
Construction, Principle of operation of
Enhancement type MOSFET, Drain
characteristics, Transfer characteristics
Construction, Principle of operation of
Depletion type MOSFET Drain
characteristics, Transfer characteristics
Handling precautions of MOSFET
Biasing circuits for JFET
Biasing circuits for MOSFET
VMOS transistor
CMOS transistor
Small signal model of FET
Small signal model of MOSFET
Analysis of CS configuration
Analysis of Source follower
Analysis of CG configuration
Comparison of FET and BJT
EE 18301 ELECTRON DEVICES AND
CIRCUITS
(Regulations 2018)
Lecture Notes (V 1.0)
Unit IV MULTISTAGE & FEEDBACK AMPLIFIERS
Prepared and Compiled
By
S.Anitha / Asssistant Professor
R.Karthikeyan / Associate Professor
Department of Electrical and Electronics Engineering
Sri Venkateswara College of Engineering
(Autonomous, Affiliated to Anna University, Chennai)
Sriperumbudur – 602117
EE18301 ELECTRON DEVICES AND CIRCUITS LTPC
3003
OBJECTIVES:
To be familiar with the theory, construction, and operation of basic electronic devices.
To introduce the concept of amplifier and Oscillators
UNIT I SEMICONDUCTOR DIODES 9
PN junction diode – Static V-I characteristics and parameters – Current equation – Diode equivalent
circuits – Space charge/Transition capacitance and Diffusion capacitance – Reverse recovery time –
Temperature effects.
Applications of PN junction diode: Rectifiers: Single phase half wave and full wave rectifiers –
clippers – clampers Voltage doubler and voltage tripler circuit
Zener and Avalanche breakdown mechanisms – Zener diodes – Forward and Reverse characteristics–
Voltage regulation phenomenon.
Applications of Zener diode: Operation of basic Zenerdiode shunt regulator – Line and Load
voltage regulations.
UNIT II BIPOLAR JUNCTION TRANSISTORS 9
Introduction to Bipolar Junction Transistor – Construction and operation of transistor-Transistor
voltages and currents – Modes of operation – Different types of configuration- Input and Output
characteristics – Thermal runaway and Stabilization – AC and DC load lines – Need for biasing a
Transistor and various biasing techniques – BJT small signal model – Analysis of CE, CB, CC
amplifiers –Determination of h parameters.
UNIT III FIELD EFFECT TRANSISTORS 9
Construction, Principle of operation of N channel and P channel JFET‟s – Drain and Transfer
characteristics – Expression for drain current – Construction, Principle of operation of Enhancement
type and Depletion type MOSFET‟s – Drain and Transfer characteristics –Handling precautions of
MOSFET – Biasing circuits for JFET and MOSFET – VMOS and CMOS transistors – Small signal
model of FET/MOSFET – Analysis of CS, CG and Source follower – Comparison of FET and BJT.
UNIT IV MULTISTAGE & FEEDBACK AMPLIFIERS 9
Two stage RC coupled amplifier –Analysis of Differential amplifier – Common mode, Differential
mode & CMRR – Single tuned amplifiers – Gain and frequency response – Neutralization methods,
power amplifiers –Types (Qualitative analysis). Advantages of negative feedback – Analysis of
Voltage / Current, Series, Shunt feedback Amplifiers using transistor
UNIT V OSCILLATORS AND OPTOELECTRONIC DEVICES 9
Positive feedback – Condition for oscillations, phase shift – Wien bridge, Hartley, Colpitts and
Crystal oscillators.
Construction, Operation and Characteristics of Optoelectronic devices: LED, LCD, Photo diode,
Photo transistor, Opto-Coupler and Solar Cell.
TOTAL: 45 PERIODS
OUTCOMES
nd voltage controlled devices
TEXT BOOKS
1. David A Bell, “Electronic Devices and Circuits”, Oxford university press, 2008.
2. Boylestead L R and Nashelsky L, "Electronic Devices and Circuit theory", Pearson Prentice Hall,
New Delhi, 2009.
REFERENCES
1. Thomas L Floyd, "Electronic Devices", prentice hall of India, New Delhi, 2007.
2. Floyd, Buchla, “Fundamentals of Analog Circuits”, Pearson, 2013
3. Donald A Neamen, “Electronic Circuit Analysis and Design” Tata McGraw Hill, 3rd Edition,
2003.
4. G.K.Mithal, “Electronic devices and circuits”, Khanna Publishers, New Delhi, 2010.
5. Millman J, Christos C Halkias, SatyabatraJit, "Electronic devices and circuits", Tata
McGraw-Hill Publishing Company Ltd., New Delhi, 2008.
6. Theodore F Bogart Jr, Jefffrey S Beasley, Guillermo Rico‟ “Electronic devices and
circuits”, Prentice Hall of India, New Delhi, 2004.
EE18301 ELECTRON DEVICES AND CIRCUITS
Unit IV MULTISTAGE & FEEDBACK AMPLIFIERS
Syllabus Help
Sl Book
Topic in syllabus Chapter Section Pages Remarks
No. reference
1 Two stage RC coupled amplifier 9 9-2 182 to 186 1 Bell
2 Analysis of Differential amplifier 1 625 to 629 2 Boyle
3 Common mode 633 to 634 2 Boyle
4 Differential mode 630 to 633 2 Boyle
5 CMRR 12 589 3 Flyod
6 Single tuned amplifiers 7 7.7 214 to 219 4 Tomar
7 Gain and frequency response 7 7.7 214 to 219 4 Tomar
8 Neutralization methods 11 11.3.4 427 to 429 7 Ramanan
9 Power amplifiers –Types 1 705 to 706 2 Boyle
(Qualitative analysis) 18 18-1 542 to 544 6 Millman
12 12.6 467to 468 7 Ramanan
4 717 to 718 6 Boyle
12 5 721 to 726 2 Boyle
18 12.9 466 to 467 7 Ramanan
18-10 564 to 565 6 Millman
8 734 to 735 2 Boyle
10 Advantages of negative feedback 7 7.3 385 to 386 5 Lal
7 7.4 387 5 Lal
11 Analysis of Voltage Series 7 7.7 396 5 Lal
feedback Amplifier using
7 7.10 406 to 409 5 Lal
transistor
12 Analysis of Voltage Shunt 7 7.10.4 421 to 423 5 Lal
feedback Amplifier using
transistor
13 Analysis of Current Series 7 7.10.3 418 to 421 5 Lal
feedback Amplifier using
transistor
14 Analysis of Current Shunt 7 7.10.2 411 to 414 5 Lal
feedback Amplifier using
transistor
Book No 1 Book No 2 Book No 3 Book No 4 Book No 5 Book No 6 Book No 7
Two stage RC coupled amplifier
Analysis of Differential Amplifier, Common
mode, Differential mode and CMRR
Single tuned amplifiers – Gain and
frequency response
Neutralization methods
Power amplifiers –Types (Qualitative
analysis)
Advantages of negative feedback
Analysis of Voltage Series feedback
Amplifier using transistor
Analysis of Voltage Shunt feedback
Amplifier using transistor
Analysis of Current Series feedback
Amplifier using transistor
Analysis of Current Shunt feedback
Amplifier using transistor
EE 18301 ELECTRON DEVICES AND
CIRCUITS
(Regulations 2018)
Lecture Notes (V 1.0)
Unit V OSCILLATORS AND OPTOELECTRONIC
DEVICES
Prepared and Compiled
By
S.Anitha / Asssistant Professor
R.Karthikeyan / Associate Professor
Department of Electrical and Electronics Engineering
Sri Venkateswara College of Engineering
(Autonomous, Affiliated to Anna University, Chennai)
Sriperumbudur – 602117
EE18301 ELECTRON DEVICES AND CIRCUITS LTPC
3003
OBJECTIVES:
To be familiar with the theory, construction, and operation of basic electronic devices.
To introduce the concept of amplifier and Oscillators
UNIT I SEMICONDUCTOR DIODES 9
PN junction diode – Static V-I characteristics and parameters – Current equation – Diode equivalent
circuits – Space charge/Transition capacitance and Diffusion capacitance – Reverse recovery time –
Temperature effects.
Applications of PN junction diode: Rectifiers: Single phase half wave and full wave rectifiers –
clippers – clampers Voltage doubler and voltage tripler circuit
Zener and Avalanche breakdown mechanisms – Zener diodes – Forward and Reverse characteristics–
Voltage regulation phenomenon.
Applications of Zener diode: Operation of basic Zenerdiode shunt regulator – Line and Load
voltage regulations.
UNIT II BIPOLAR JUNCTION TRANSISTORS 9
Introduction to Bipolar Junction Transistor – Construction and operation of transistor-Transistor
voltages and currents – Modes of operation – Different types of configuration- Input and Output
characteristics – Thermal runaway and Stabilization – AC and DC load lines – Need for biasing a
Transistor and various biasing techniques – BJT small signal model – Analysis of CE, CB, CC
amplifiers –Determination of h parameters.
UNIT III FIELD EFFECT TRANSISTORS 9
Construction, Principle of operation of N channel and P channel JFET‟s – Drain and Transfer
characteristics – Expression for drain current – Construction, Principle of operation of Enhancement
type and Depletion type MOSFET‟s – Drain and Transfer characteristics –Handling precautions of
MOSFET – Biasing circuits for JFET and MOSFET – VMOS and CMOS transistors – Small signal
model of FET/MOSFET – Analysis of CS, CG and Source follower – Comparison of FET and BJT.
UNIT IV MULTISTAGE & FEEDBACK AMPLIFIERS 9
Two stage RC coupled amplifier –Analysis of Differential amplifier – Common mode, Differential
mode & CMRR – Single tuned amplifiers – Gain and frequency response – Neutralization methods,
power amplifiers –Types (Qualitative analysis). Advantages of negative feedback – Analysis of
Voltage / Current, Series, Shunt feedback Amplifiers using transistor
UNIT V OSCILLATORS AND OPTOELECTRONIC DEVICES 9
Positive feedback – Condition for oscillations, phase shift – Wien bridge, Hartley, Colpitts and
Crystal oscillators.
Construction, Operation and Characteristics of Optoelectronic devices: LED, LCD, Photo diode,
Photo transistor, Opto-Coupler and Solar Cell.
TOTAL: 45 PERIODS
OUTCOMES
nd voltage controlled devices
TEXT BOOKS
1. David A Bell, “Electronic Devices and Circuits”, Oxford university press, 2008.
2. Boylestead L R and Nashelsky L, "Electronic Devices and Circuit theory", Pearson Prentice Hall,
New Delhi, 2009.
REFERENCES
1. Thomas L Floyd, "Electronic Devices", prentice hall of India, New Delhi, 2007.
2. Floyd, Buchla, “Fundamentals of Analog Circuits”, Pearson, 2013
3. Donald A Neamen, “Electronic Circuit Analysis and Design” Tata McGraw Hill, 3rd Edition,
2003.
4. G.K.Mithal, “Electronic devices and circuits”, Khanna Publishers, New Delhi, 2010.
5. Millman J, Christos C Halkias, SatyabatraJit, "Electronic devices and circuits", Tata
McGraw-Hill Publishing Company Ltd., New Delhi, 2008.
6. Theodore F Bogart Jr, Jefffrey S Beasley, Guillermo Rico‟ “Electronic devices and
circuits”, Prentice Hall of India, New Delhi, 2004.
EE18301 ELECTRON DEVICES AND CIRCUITS
Unit V OSCILLATORS AND OPTOELECTRONIC
DEVICES
Syllabus Help
Sl Book
Topic in syllabus Chapter Section Pages Remarks
No. reference
1 Positive feedback 16 16-1 774-775 1 Flyod
2 Condition for oscillations 16 776 – 777 1 Flyod
8 8.2 ,8.3 433 - 434 2 Lal
3 phase shift – Wien bridge,
Hartley, Colpitts and Crystal
oscillator
4 Phase shift oscillator 8 8.4 434 - 435 2 Lal
5 Wien bridge oscillator 8 8.8 , 8.9 443 - 445 2 Lal
6 Hartley oscillator 8 8.6 440 2 Lal
8 8.7.1 442 2 Lal
7 Colpitts oscillator 8 8.7.2 442 - 443 2 Lal
8 Crystal oscillator 16 790 - 792 1 Flyod
Construction, Operation and
Characteristics of Optoelectronic
devices
9 LED 3 3-4 130 - 133 1 Flyod
10 LCD 18 18-10 401 - 404 5 Bell(old)
11 Photo diode 2 2.14 2.34 – 2.35 3 Sali
12 Photo transistor 4 4.9 4.27 – 4.28 3 Sali
13 Opto-Coupler 18 18.12 405 - 407 5 Bell(old)
14 Solar Cell 1 1.5 35 - 36 4 Neaman
Book references
Book No 1 Book No 2 Book No 3 Book No 4 Book No 5
Positive feedback
Condition for oscillations
Phase shift oscillator
Wien bridge oscillator
Hartley oscillator
Colpitts oscillator
Crystal oscillator
LED
LCD
Photo diode
Photo transistor
Opto-Coupler
Solar Cell
