1.
For a JFET, the value of VDS at which ID becomes essentially constant is the
A. pinch-off voltage.
B. cutoff voltage.
C. breakdown voltage.
D. ohmic voltage.
Answer: Option A
2.
The ________ has a physical channel between the drain and source.
A. D-MOSFET B. E-MOSFET
C. V-MOSFET D. [NIL]
Answer: Option A
3. Refer to figure given below. Calculate the value of VDS.
A. 0 V
B. 2 V
C. 4 V
D. –2 V
Answer: Option B
4. Refer to figure shown below. Determine the value of VS.
A. 20 V
B. 8 V
C. 6 V
D. 2 V
Answer: Option C
5.
A self-biased n-channel JFET has a VD = 6 V. VGS = –3 V. Find the value of VDS.
A. –3 V
B. –6 V
C. 3 V
D. 6 V
Answer: Option C
6. Refer to the given figure. ID = 6 mA. Calculate the value of VDS.
A. –9 V
B. 9 V
C. 6 V
D. –3 V
Answer: Option A
7.
What type(s) of gate-to-source voltage(s) can a depletion MOSFET (D-MOSFET) operate
with?
A. zero
B. positive
C. negative
D. any of the above
Answer: Option D
8.
Midpoint bias for a D-MOSFET is ID = ________, obtained by setting VGS = 0.
A. IDSS / 2
B. IDSS / 3.4
C. IDSS
Answer: Option C
9.
On the drain characteristic curve of a JFET for VGS = 0, the pinch-off voltage is
A. below the ohmic area.
B. between the ohmic area and the constant current area.
C. between the constant current area and the breakdown region.
D. above the breakdown region.
Answer: Option B
10. Refer to the given figure. ID = 6 mA. Calculate the value of VDS.
A. –6 V
B. 6 V
C. 12 V
D. –3 V
Answer: Option B
11. Refer to figure given below. Determine the value of VGS.
A. –20 V
B. –8 V
C. –6 V
D. –2 V
Answer: Option C
12.
Which of the following devices has the highest input resistance?
A. diode
B. JFET
C. MOSFET
D. bipolar junction transistor
Answer: Option C
13.
The value of VGS that makes ID approximately zero is the
A. pinch-off voltage.
B. cutoff voltage.
C. breakdown voltage.
D. ohmic voltage.
Answer: Option B
14.
The JFET is always operated with the gate-source pn junction ________ -biased.
A. forward B.reverse
Answer: Option B
15. Identify the p-channel D-MOSFET.
A. a B. b
C. c D. d
Answer: Option B
16.
All MOSFETs are subject to damage from electrostatic discharge (ESD).
A. true B.false
Answer: Option A
17. Identify the n-channel D-MOSFET.
A. a B. b
C. c D. d
Answer: Option A
18.
A dual-gated MOSFET is
A. a depletion MOSFET.
B. an enhancement MOSFET.
C. a VMOSFET.
D. Either depletion or an enhancement MOSFET.
Answer: Option D
19. Refer to figure show below. Calculate the value of VD.
A. 20 V
B. 8 V
C. 6 V
D. 2 V
Answer: Option B
20.
What three areas are the drain characteristics of a JFET (VGS = 0) divided into?
A. ohmic, constant-current, breakdown
B. pinch-off, constant-current, avalanche
C. ohmic, constant-voltage, breakdown
Answer: Option A
21.
In a self-biased JFET circuit, if VD = VDD then ID = ________.
A. 0
B. cannot be determined from information above
Answer: Option A
22.
The resistance of a JFET biased in the ohmic region is controlled by
A. VD. B. VGS.
C. VS. D. VDS.
Answer: Option B
23.
High input resistance for a JFET is due to
A. a metal oxide layer.
B. a large input resistor to the device.
C. an intrinsic layer.
D. the gate-source junction being reverse-biased.
Answer: Option D
24.
For a JFET, the change in drain current for a given change in gate-to-source voltage, with
the drain-to-source voltage constant, is
A. breakdown.
B. reverse transconductance.
C. forward transconductance.
D. self-biasing.
Answer: Option C
25. Identify the p-channel E-MOSFET.
A. a B. b
C. c D. d
Answer: Option D
26. Refer to figure shown below. What is the value of IG?
A. 6 mA
B. 4 mA
C. 2 mA
D. 0 mA
Answer: Option D
27.
A JFET data sheet specifies VGS(off) = –6 V and IDSS = 8 mA. Find the value of ID when VGS =
–3 V.
A. 2 mA
B. 4 mA
C. 8 mA
D. none of the above
Answer: Option A
28.
A JFET data sheet specifies VGS(off) = –10 V and IDSS = 8 mA. Find the value of ID when VGS =
–3 V.
A. 2 mA
B. 1.4 mA
C. 4.8 mA
D. 3.92 mA
Answer: Option D
29. Identify the n-channel E-MOSFET.
A. a B. b
C. c D. d
Answer: Option C
30.
If VD is less than expected (normal) for a self-biased JFET circuit, then it could be caused by
a(n)
A. open RG.
B. open gate lead.
C. FET internally open at gate.
D. all of the above
Answer: Option D
31. Refer to the given figure. ID = 6 mA. Calculate the value of VDS.
A. 13.2 V
B. 10 V
C. 6.8 V
D. 0 V
Answer: Option C
1.
When biased as a variable resistor, JFET resistance (RDS) increases as VGS becomes more
negative.
A. True B.False
Answer: Option A
2.
The arrow on the schematic symbol for a MOSFET indicates the channel material type.
A. True B.False
Answer: Option B
3.
A VMOS device can handle higher power and voltage than a conventional MOSFET.
A. True B.False
Answer: Option A
4.
It is not necessary to exercise any particular care in handling a MOSFET.
A. True B.False
Answer: Option B
5.
The Q-point in a JFET with voltage-divider bias is more stable than in a self-biased JFET.
A. True B.False
Answer: Option A
6.
One advantage of a JFET over the BJT is its high input resistance.
A. True B.False
Answer: Option A
7.
An E-MOSFET can be operated with either positive or negative values of VGS.
A. True B.False
Answer: Option B
8.
The MOSFET has no pn junction.
A. True B.False
Answer: Option A
9.
The JFET operates with a reverse-biased pn junction (gate-to source).
A. True B.False
Answer: Option B
10.
The three FET terminals are called source, base, and drain.
A. True B.False
Answer: Option B
11. The E-MOSFET has no physical channel.
A. True B.False
Answer: Option A
