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BUV26 NPN Power Transistor Specs

This document provides product specifications for the SavantIC Semiconductor BUV26 silicon NPN power transistor. Key details include: - It has a TO-220C package and is designed for high frequency switching applications with low saturation voltage and fast switching speeds. - Absolute maximum ratings include a collector-emitter voltage of 90V and collector current of 14A. - Thermal characteristics include a maximum junction temperature of 150C and thermal resistance from junction to mounting base of 1.92 K/W. - Electrical characteristics include a typical collector-emitter saturation voltage of 0.6V at 6A collector current and maximum turn-on and fall times of 0.6ms and 0.

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45 views3 pages

BUV26 NPN Power Transistor Specs

This document provides product specifications for the SavantIC Semiconductor BUV26 silicon NPN power transistor. Key details include: - It has a TO-220C package and is designed for high frequency switching applications with low saturation voltage and fast switching speeds. - Absolute maximum ratings include a collector-emitter voltage of 90V and collector current of 14A. - Thermal characteristics include a maximum junction temperature of 150C and thermal resistance from junction to mounting base of 1.92 K/W. - Electrical characteristics include a typical collector-emitter saturation voltage of 0.6V at 6A collector current and maximum turn-on and fall times of 0.6ms and 0.

Uploaded by

sabir siddiqui
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors BUV26

DESCRIPTION
www.datasheet4u.com
·With TO-220C package
·Low collector saturation voltage
·Fast switching speed

APPLICATIONS
·For use in high frequency and efficiency
converters,switching regulators and motor
control

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base

3 Emitter

Absolute maximum ratings (Tc=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 180 V

VCEO Collector-emitter voltage Open base 90 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current (DC) 14 A

ICM Collector current (peak) 25 A

IB Base current 4 A

IBM Base current (peak) 6 A

Ptot Total power dissipation TC=25 85 W

Tj Max.operating junction temperature 150

Tstg Storage temperature -65~150

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-mb Thermal resistance junction to mounting base 1.92 K/W


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors BUV26

CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH 90 V

VCEsat-1 Collector-emitter saturation voltage IC=6A ;IB=0.6 A 0.6 V

VCEsat-2 Collector-emitter saturation voltage IC=12A; IB=1.2A 1.5 V

VBEsat-1 Base-emitter saturation voltage IC=6A ;IB=0.6 A 1.2 V

VBEsat-2 Base-emitter saturation voltage IC=12A; IB=1.2A 2.0 V

ICEX Collector cut-off current VCE =180V;VBE =-1.5V;Tj=125 1.0 mA

IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA

Switching times resistive load

ton Turn-on time 0.4 0.6 ms

IC=12A;IB1=1.2A; IB2=2.4A
ts Storage time 0.45 1.0 µs
VCC =50V

tf Fall time 0.12 0.25 µs

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors BUV26

PACKAGE OUTLINE

www.datasheet4u.com

Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)

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