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Unit 3: MOS Electrostatics: Flat-Band Voltage

1) The document discusses the flat-band voltage in MOS capacitors, which is non-zero due to differences in the work functions between the metal gate and semiconductor. 2) An ideal MOS capacitor would have a flat-band voltage of zero, but in reality it is determined by the difference between the metal and semiconductor work functions. 3) Measuring capacitance-voltage characteristics is introduced as a powerful technique for characterizing real MOS structures to be covered in the next lecture.

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650 views14 pages

Unit 3: MOS Electrostatics: Flat-Band Voltage

1) The document discusses the flat-band voltage in MOS capacitors, which is non-zero due to differences in the work functions between the metal gate and semiconductor. 2) An ideal MOS capacitor would have a flat-band voltage of zero, but in reality it is determined by the difference between the metal and semiconductor work functions. 3) Measuring capacitance-voltage characteristics is introduced as a powerful technique for characterizing real MOS structures to be covered in the next lecture.

Uploaded by

al
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Essentials of MOSFETs

Unit 3: MOS Electrostatics

Lecture 3.4:
Flat-band Voltage
Mark Lundstrom

[email protected]
Electrical and Computer Engineering
Purdue University
West Lafayette, Indiana USA

Lundstrom: 2018 1
Hypothetical, ideal MOS-C

“No metal-semiconductor
work function difference.”

y
“flatband voltage”

The Fermi level in this “special” metal lines up with the Fermi
level in the semiconductor at zero gate voltage.)
Lundstrom: 2018 2
Hypothetical, ideal MOS-C

metal

3
Real MOS-C

metal

4
Real MOS-C at VG = 0

metal

5
Example

Aluminum metal and p-type Si

✓
6
Gate voltage vs. surface potential

Lundstrom: 2018 7
Recall: Threshold voltage example

✓
Lundstrom: 2018 8
Charge at the oxide-semiconductor interface

charge in
the oxide

metal

(fixed charge)
9
Volt drop across the oxide at fixed surface potential

Lundstrom: 2018
10
Flat-band voltage again

Lundstrom: 2018
11
Recall: Threshold voltage example

(positive charges)
✓
Lundstrom: 2018 12
Summary

1) The flat-band voltage in a real MOS-C is non-zero.

2) The gate voltage relation is:

Lundstrom: 2018
13
Next topic

Measuring the small signal capacitance as a


function of DC bias voltage is a powerful
technique for characterizing MOS
structures.

Understanding MOS CV characteristics is


the subject of the next lecture.

Lundstrom: 2018 14

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