APPENDIX A
BIP: GUMMEL–POON BIPOLAR
TRANSISTOR MODEL
TOPOLOGY OF INTRINSIC AND EXTRINSIC MODEL
CI
Lc
Cbc
Rc2
(NPN or PNP type)
Cbx
Vs12 Cbci Ibr IIc
Lb Rb2 BR
BI Rbb
Icf Icr Ijss Cjss
Ibf VS2 VS3
Cbel IIc
Vs1 BF
Substrate
(LPNP type) n4
Re1 Cce
Cbe
Le
El
The npn transistor model is shown. The pnp transistor model has all currents and
voltages in the opposite polarity.
Microwave Circuit Design Using Linear and Nonlinear Techniques, Second Edition
by Vendelin, Pavio and Rohde
Copyright 2005 John Wiley & Sons, Inc.
959
960 BIP: GUMMEL–POON BIPOLAR TRANSISTOR MODEL
TOPOLOGY OF PACKAGE MODEL
Cbcp
ZBt, LBt Ci Zct, Lct
B Bi C
n1 n2
TRL Ei TRL
Cbep Ccep
TRL Zet, Let
E
n3
INTRINSIC MODEL KEYWORDS
Keyword Description Unit Default
NPN Model polarity — npn
PNP Model polarity — pnp
LPNP Selects lateral pnp model substrate connection — Lpnp
IS Transport saturation current A 1E-16
ISE Base–emitter leakage saturation current A 0
ISC Base–collector leakage saturation current A 0
BF Ideal forward-current gain — 100.0
BR Ideal reverse-current gain — 1.0
NF Forward-current emission coefficient — 1.0
NE Base–emitter leakage emission coefficient — 1.5
NR Reverse-current emission coefficient — 1.0
NC Base–collector emission coefficient — 2.0
VA Forward Early voltage (alternate keyword: VAF) V inf
VB Reverse Early voltage (alternate keyword: VAR) V inf
IKF Corner for forward-beta high-current rolloff A inf
IKR Corner for reverse-beta high-current rolloff A inf
RBM Minimum base resistance RB
RB Maximum (zero-bias) base resistance 0
IRB Current where Rbb falls halfway to RBM A inf
TF Ideal forward transit time s 0
TR Ideal reverse transit time s 0
ITF Transit time dependency on Ic A 0
XTF Transit time bias dependence coefficient — 0
VTF Transit time bias dependence on Vbc V inf
FCC Forward-bias depletion capacitor coefficient — 0.5
VJE Base–emitter built-in potential V 0.75
MJE Base–emitter pn grading factor — 0.33
VJC Base–collector built-in potential V 0.75
MJC Base–collector pn grading factor — 0.33
CJC Base–collector zero-bias capacitance F 0.0
EXTRINSIC MODEL KEYWORDS 961
Keyword Description Unit Default
CJE Base–emitter zero-bias capacitance F 0.0
XCJC Fraction of Cbc connected to intrinsic Rbb — 1.0
PTF Excess phase at 1/(2π TF) degree 0
NKF Exponent for high-current beta rolloff — 0.5
UPDATE Selects alternate base charge equation (alternate keyword: — 0.0
GPQ1)
ISS Substrate leakage saturation current A 0.0
NS Substrate pn emission coefficient — 1.0
CJS Substrate–base/collector zero-bias capacitance F 0.0
MJS Substrate pn grading factor — 0.33
VJS Substrate junction built-in potential V 0.75
KF Flicker noise coefficient — 0.0
AF Flicker noise exponent — 1.0
FCP Flicker noise frequency shape factor — 1.0
SN Switch to turn device shot noise on or off (1 or 0) — 1
AREA Area multiplier — 1.0
NOIS Reference label to a set of noise data — —
NAME Required user-specified name up to eight characters — —
EXTRINSIC MODEL KEYWORDS
Keyword Description Unit Default
RB2 Base ohmic resistance 0
RC2 Collector ohmic resistance 0
RE1 Emitter ohmic resistance 0
CBE Base–emitter external capacitance F 0
CBC Base–collector external capacitance F 0
CCE Collector–emitter external capacitance F 0
LB Base-lead inductance H 0
LC Collector-lead inductance H 0
LE Emitter-lead inductance H 0
CBCP Base–collector package capacitance F 0
CBEP Base–emitter package capacitance F 0
CCEP Collector–emitter package capacitance F 0
ZBT Base transmission line impedance 50
ZCT Collector transmission line impedance 50
ZET Emitter transmission line impedance 50
LBT Base transmission line length, εr = 1 m 0
LCT Collector transmission line length, εr = 1 m 0
LET Emitter transmission line length, εr = 1 m 0
962 BIP: GUMMEL–POON BIPOLAR TRANSISTOR MODEL
TEMPERATURE COEFFICIENT KEYWORDS
Keyword Description Unit Default
TJ Junction temperature K 298
TNOM Reference temperature K 298
XTI IS, ISE, and ISC temperature exponent — 2.0
XTB BF and BR temperature exponent — 0
EG Band gap voltage at 0 K eV 1.16
TRB1 RB linear temperature coefficient (alternate keyword: K−1 0
ARB)
TRB2 RB quadratic temperature coefficient (alternate K−2 0
keyword: BRB)
TRM1 RBM linear temperature coefficient (alternate K−1 0
keyword: ARBM)
TRM2 RBM quadratic temperature coefficient (alternate K−2 0
keyword: BRBM)
TRC1 RC2 linear temperature coefficient (alternate keyword: K−1 0
ARC2)
TRC2 RC2 quadratic temperature coefficient (alternate K−2 0
keyword: BRC2)
TRE1 RE1 linear temperature coefficient (alternate keyword: K−1 0
ARE1)
TRE2 RE1 quadratic temperature coefficient (alternate K−2 0
keyword: BRE1)
DEVICE EQUATIONS
The following equations are used for the model:
Vs1 = intrinsic base–emitter voltage state variable
Vs12 = intrinsic base–collector voltage
Vbx = extrinsic base–intrinsic collector voltage
Vs2 = intrinsic collector–emitter voltage state variable
Vs3 = voltage across substrate junction
Vt = kTJ/q (thermal voltage)
k = Boltzmann’s constant
q = electron charge
TJ = analysis temperature (kelvins)
DEVICE EQUATIONS 963
Conduction Currents
Ibf Ibr
Ib = base current = + Iie + + Iic
BF BR
Ibf Ibr Ibr
Ic = collector current = − − − Iic
Kqb Kqb BR
Vs1
Ibf = forward diffusion current = IS exp −1
NF Vt
Vs1
Iie = nonideal base–emitter current = ISE exp −1
NE Vt
Vs12
Ibr = reverse diffusion current = IS exp −1
NR Vt
Vs12
Iic = nonideal base–collector current = ISC exp −1
NC Vt
Ibf
Icf =
Kqb
Ibr
Icr =
Kqb
Vs3
Ijss = substrate current = ISS exp −1
NS Vt
Kq1
Kqb = base charge factor = [1 + (1 + 4Kq2 )NKF ]
2
1 Vs12 Vs1
UPDATE = 0 or + ≤0
1−V
s12 /VA − Vs1 /VB VA VB
Kq1 =
1
otherwise
1 + Vs12 /VA + Vs1 /VB
Ibf Ibr
Kq2 = +
IKF IKR
RB − RBM
RBM + IRB = ∞ (default)
Kqb
Rbb =
RBM + 3(RB − RBM) tan(x) − x
IRB > 0
x tan2 (x)
where
1 + 144Ib /IRBπ 2 − 1
x= √
(24/π 2 ) Ib /IRB
Capacitances
Cbei = base–emitter capacitance = Cbet + Cbej
∂ Ibf
Cbet = transmit time capacitance = tf
∂Vs1 Kqb
964 BIP: GUMMEL–POON BIPOLAR TRANSISTOR MODEL
Vs12
tf = effective TF = TF 1 + XTF x 2 exp
1.44VTF
where x = Ibf /Ibf + ITF.
Vs1 −MJE
CJE 1 −
Vs1 ≤ FCC × VJE
VJE
Cbej = CJE(1 − FCC)−(1+MJE)
V Vs1 > FCC × VJE
× 1 − FCC(1 + MJE) + MJE s1
VJE
Cbci = base–collector capacitance = Cbct + XCJC Cbcj
Cbct = transit time capacitance = TR Gbc
∂Ibr
Gbc = base–collector conductance =
∂Vs12
Vs12 −MJC
CJC 1 − Vs12 ≤ FCC × VJC
VJC
Cbcj = CJC(1 − FCC)−(1+MJC)
V Vs12 > FCC × VJC
× 1 − FCC(1 + MJC) + MJC s12
VJC
Cbx = extrinsic base–intrinsic collector capacitance = (1 − XCJC)Cbxj
Vbx −MJC
CJC 1 − Vbx ≤ FCC × VJC
VJC
Cbxj = CJC(1 − FCC)−(1+MJC)
V > FCC × VJC
V
× 1 − FCC(1 + MJC) + MJC bx
bx
VJC
Vs3 −MJS
CJS 1 − Vs3 ≤ 0
VJS
Cjss = substrate capacitance =
Vs3
CJS 1 + MJS Vs3 > 0
VJS
AREA EFFECTS
Ibf = AREA × Ibf Ibr = AREA × Ibr
Iie = AREA × Iie Iic = AREA × Iic
Icf = AREA × Icf Icr = AREA × Icr
Cbc = AREA × Cbc Cbe = AREA × Cbe
Rbb
Cbx = AREA × Cbx Rbb =
AREA
TEMPERATURE EFFECTS 965
RB2 RC2
RB2 = RC2 =
AREA AREA
RE1
RE1 = Ijss = AREA × Ijss
AREA
Cjss = AREA × Cjss
TEMPERATURE EFFECTS
Define t = TJ − TNOM; tn = TJ/TNOM.
(tn − 1)EG
IS(TJ) = IS exp tnXTI/NF
Vt
(tn − 1)EG
ISE(TJ) = ISE exp tnXTI/NE
Vt
(tn − 1)EG
ISC(TJ) = ISC exp tnXTI/NC
Vt
(tn − 1)EG
ISS(TJ) = ISS exp tnXTI/NS
Vt
β(TJ) = β tnXTB
where β is BF or BR.
Vbi (TJ) = Vbi tn − 3Vt ln(tn) − tn EGap(TNOM) + EGap(TJ)
where Vbi is VJE, VJC, or VJS.
TJ2
EGap(TJ) = EG − 0.000702
TJ + 1108
Vbi (TJ)
Cj (TJ) = Cj 1 + Mj 0.0004 t + 1 −
Vbi
where Cj , Mj , and Vbi are (CJE, MJE, and VJE), (CJC, MJC, and VJC), and (CSS,
MJS and VJS), respectively.
R(TJ) = R(1 + AR t + BR t 2 )
where R is RB, RBM, RC2, or RE1; AR refers to the linear temperature coeffi-
cient, for example, ARB; and BR refers to the quadratic temperature coefficient, for
example, BRB.
