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Industrial Power Transistor Specs

The document provides product specifications for SavantIC Semiconductor's BUW12 and BUW12A silicon NPN power transistors. The transistors feature a TO-3PN package and are intended for high voltage, fast speed applications in industrial equipment. Key specifications include maximum voltage and current ratings, thermal characteristics, and switching times. The transistors have a collector-emitter saturation voltage below 1.5V and turn-on time below 1μs.

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157 views3 pages

Industrial Power Transistor Specs

The document provides product specifications for SavantIC Semiconductor's BUW12 and BUW12A silicon NPN power transistors. The transistors feature a TO-3PN package and are intended for high voltage, fast speed applications in industrial equipment. Key specifications include maximum voltage and current ratings, thermal characteristics, and switching times. The transistors have a collector-emitter saturation voltage below 1.5V and turn-on time below 1μs.

Uploaded by

alexjcc10
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors BUW12 BUW12A

DESCRIPTION
·With TO-3PN package
·High voltage,fast speed
·Low collector saturation voltage

APPLICATIONS
·Specially intended for operating
In industrial applications

PINNING (See Fig.2)

PIN DESCRIPTION

1 Base
Collector;connected to
2
mounting base
3 Emitter Fig.1 simplified outline (TO-3PN) and symbol

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

BUW12 850
VCBO Collector-base voltage Open emitter V
BUW12A 1000

BUW12 400
VCEO Collector-emitter voltage Open base V
BUW12A 450

VEBO Emitter-base voltage Open collector 9 V

IC Collector current 8 A

ICM Collector current-peak 20 A

IB Base current 4 A

PT Total power dissipation TC=25 125 W

Tj Junction temperature 150

Tstg Storage temperature -65~175

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal resistance from junction to case 1.2 /W


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors BUW12 BUW12A

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

BUW12 400
Collector-emitter
VCEO(SUS) IC=0.1A ; IB=0; L=25mH V
sustaining voltage
BUW12A 450

VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 1.5 V

VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.5 V

BUW12 VCE=850V; VBE=0


Collector
ICES 1.0 mA
cut-off current
BUW12A VCE=1000V; VBE=0

IEBO Emitter cut-off current VEB=9V; IC=0 10 mA

hFE DC current gain IC=1A ; VCE=5V 15 50

Switching times resistive load

ton Turn-on time 1.0 µs

IC=6A ;IB1=-IB2=1.2A
ts Storage time 4.0 µs
VCC=240V

tf Fall time 0.8 µs

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors BUW12 BUW12A

PACKAGE OUTLINE

Fig.2 Outline dimensions

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