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Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

The document provides the product specifications for the Silicon PNP Power Transistor 2SA1216, including its description, applications, pin configuration, absolute maximum ratings, and key characteristics. It details parameters such as collector-emitter voltage, collector current, and power dissipation, along with switching times and hFE classifications. The specifications are intended for audio and general-purpose applications, with a focus on performance metrics at a junction temperature of 25°C.

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50 views4 pages

Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

The document provides the product specifications for the Silicon PNP Power Transistor 2SA1216, including its description, applications, pin configuration, absolute maximum ratings, and key characteristics. It details parameters such as collector-emitter voltage, collector current, and power dissipation, along with switching times and hFE classifications. The specifications are intended for audio and general-purpose applications, with a focus on performance metrics at a junction temperature of 25°C.

Uploaded by

busamawan wayan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1216

DESCRIPTION
·With MT-200 package
·Complement to type 2SC2922

APPLICATIONS
·Audio and general purpose

PINNING(see Fig.2)

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (MT-200) and symbol
3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -180 V

VCEO Collector-emitter voltage Open base -180 V

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -17 A

IB Base current -5 A

PC Collector power dissipation TC=25 200 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1216

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=0 -180 V

VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A -2.0 V

ICBO Collector cut-off current VCB=-180V; IE=0 -100 µA

IEBO Emitter cut-off current VEB=-5V; IC=0 -100 µA

hFE DC current gain IC=-8A ; VCE=-4V 30

Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 500 pF

fT Transition frequency IC=-2A ; VCE=-12V 40 MHz

Switching times

ton Turn-on time 0.30 µs

IC=-10A;RL=@
ts Storage time IB1=-IB2=-1A 0.70 µs
VCC=-40V

tf Fall time 0.20 µs

hFE classifications

O Y P G

30-60 50-100 70-140 90-180

2
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1216

PACKAGE OUTLINE

Fig.2 outline dimensions

3
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1216

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