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Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

The document provides the product specification for the Silicon PNP Power Transistor 2SB825, detailing its features, applications, and pin configuration. It includes absolute maximum ratings, electrical characteristics, and switching times. The transistor is suitable for high current switching applications and has a TO-220 package.

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49 views4 pages

Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

The document provides the product specification for the Silicon PNP Power Transistor 2SB825, detailing its features, applications, and pin configuration. It includes absolute maximum ratings, electrical characteristics, and switching times. The transistor is suitable for high current switching applications and has a TO-220 package.

Uploaded by

vali2daduica
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB825

DESCRIPTION
·With TO-220 package
·Low saturation voltage
·Complement to type 2SD1061

APPLICATIONS
·Universal high current switching as
solenoid driving;high speed inverter
and converter applications

PINNING

PIN DESCRIPTION

1 Emitter

Collector;connected to
2
mounting base

3 Base

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -60 V

VCEO Collector-emitter voltage Open base -50 V

VEBO Emitter-base voltage Open collector -6 V

IC Collector current (DC) -7 A

ICP Collector current (Pulse) -12 A

PC Collector power dissipation TC=25 40 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB825

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=8 -50 V

V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -60 V

V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V

VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A -0.4 V

ICBO Collector cut-off current VCB=-40V;IE=0 -0.1 mA

IEBO Emitter cut-off current VEB=-4V; IC=0 -0.1 mA

hFE-1 DC current gain IC=-1A ; VCE=-2V 70 280

hFE-2 DC current gain IC=-5A ; VCE=-2V 30

fT Transition frequency IC=-1A ; VCE=-5V 10 MHz

Switching times

ton Turn-on time 0.2 µs

ts Storage time IC=2.0A; IB1=- IB2=0.2A 0.7 µs

tf Fall time 0.1 µs

hFE-1 classifications

Q R S

70-140 100-200 140-280

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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB825

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)

3
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB825

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