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Varactor and Transistor Selection Guide

This document provides specifications for various Siemens semiconductor components, including varactor diodes, transistors, RF transistors, and general purpose transistors. It lists maximum ratings, key characteristics, and package types for each component. For complete data sheets, users are instructed to contact Siemens via their website. The document appears to be a selection guide for leaded semiconductor components from Siemens' product line.

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Igor P
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151 views3 pages

Varactor and Transistor Selection Guide

This document provides specifications for various Siemens semiconductor components, including varactor diodes, transistors, RF transistors, and general purpose transistors. It lists maximum ratings, key characteristics, and package types for each component. For complete data sheets, users are instructed to contact Siemens via their website. The document appears to be a selection guide for leaded semiconductor components from Siemens' product line.

Uploaded by

Igor P
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Selection Guide

For complete information and data sheets please contact us on our internet homepage
http://www.siemens.de/semiconductor/products/35/35.htm

Leaded Components
Varactor Diodes (leaded)
Type Maximum Characteristics (TA = 25 °C) Package
Ratings
VR IF CT at VR CT at VR CRatio IR at VR
V mA pF V pF V nA V
■ BB 112 12 50 440 - 520 1 16.50 - 29.00 8.5 ≥ 18.00 50 10 TO-92a
■ BB 304 32 50 42 - 47.5 2 25.00 8.0 1.65 - 1.75 20 30 TO-92b
■ Not for new design

Transistors (leaded)
Type Maximum Characteristics (TA = 25 °C) Package
N = NPN Ratings
P = PNP
VCE0 IC Ptot fT ICB0 at VCB0 hFE at IC VCE VCEsat at IC IB
V mA mW MHz nA V mA V V mA mA

High-Voltage Transistors
■ BF 420 N 300 50 830 100 ≤ 10 200 ≥ 50 25 20 ≤ 20.0 25 – TO-92d
■ BF 421 P 300 50 830 100 ≤ 10 200 ≥ 50 25 20 ≤ 20.0 25 – TO-92d
■ BF 422 N 250 50 830 100 ≤ 10 200 ≥ 50 25 20 ≤ 20.0 25 – TO-92d
■ BF 423 P 250 50 830 100 ≤ 10 200 ≥ 50 25 20 ≤ 20.0 25 – TO-92d
■ BFP 22 N 200 200 625 70 ≤ 100 160 ≥ 50 30 10 ≤ 0.5 20 2 TO-92c
■ BFP 23 P 200 200 625 70 ≤ 100 160 ≥ 50 30 10 ≤ 0.4 20 2 TO-92c
■ BFP 25 N 300 200 625 70 ≤ 100 250 ≥ 40 30 10 ≤ 0.4 20 2 TO-92c
■ BFP 26 P 300 200 625 70 ≤ 100 250 ≥ 40 30 10 ≤ 0.5 20 2 TO-92c
■ MPSA 42 N 300 500 625 70 100 200 ≥ 40 30 10 ≤ 0.5 20 2 TO-92c
■ MPSA 43 N 200 500 625 70 100 160 ≥ 40 30 10 ≤ 0.4 20 2 TO-92c
■ MPSA 92 P 300 500 625 70 100 200 ≥ 25 30 10 ≤ 0.5 20 2 TO-92c
■ MPSA 93 P 200 500 625 70 100 160 ≥ 30 30 10 ≤ 0.4 20 2 TO-92c
■ Not for new design

Semiconductor
Semiconductor Group
Group 35
1 1998-11-01
1998-11-01
Selection Guide

Transistors (leaded) (cont’d)


Type Maximum Characteristics (TA = 25 °C) Package
N = NPN Ratings
P = PNP
VCE0 IC Ptot fT ICB0 at VCB0 hFE at IC VCE VCEsat at IC IB
V mA mW MHz nA V mA V V mA mA

Darlington Transistors
■ BC 516 P 30 500 625 200 ≤ 100 30 ≥ 30000 20 2 ≤ 1.0 100 0.1 TO-92d
■ BC 517 N 30 500 625 150 ≤ 100 30 ≥ 30000 20 2 ≤ 1.0 100 0.1 TO-92d
■ BC 617 N 40 500 625 150 ≤ 100 40 ≥ 20000 200 5 ≤ 1.1 200 0.2 TO-92d
■ BC 618 N 55 500 625 150 ≤ 100 60 ≥ 10000 200 5 ≤ 1.1 200 0.2 TO-92d
■ BC 875 N 45 1000 800 150 ≤ 100 60 ≥ 2000 500 10 ≤ 1.3 500 0.5 TO-92d
■ BC 876 P 45 1000 800 150 ≤ 100 60 ≥ 2000 500 10 ≤ 1.3 500 0.5 TO-92d
■ BC 877 N 60 1000 800 150 ≤ 100 80 ≥ 2000 500 10 ≤ 1.3 500 0.5 TO-92d
■ BC 878 P 60 1000 800 150 ≤ 100 80 ≥ 2000 500 10 ≤ 1.3 500 0.5 TO-92d
■ BC 879 N 80 1000 800 150 ≤ 100 90 ≥ 2000 500 10 ≤ 1.3 500 0.5 TO-92d
■ BC 880 P 80 1000 800 150 ≤ 100 90 ≥ 2000 500 10 ≤ 1.3 500 0.5 TO-92d

■ Not for new design

RF-Transistors
Type Maximum Ratings Characteristics (TA = 25 °C) Package
N = NPN
P = PNP VCE0 IC Ptot fT F IC VCE f GPC IC VCE f
V mA mW GHz dB mA V MHz dB mA V MHz
■ BF 414 P 30 25 300 0.56 3.0 5 10 100 – – – – TO-92d
■ BF 506 P 35 30 300 0.55 3.0 2 10 200 – – – – TO-92d
■ BF 959 N 20 100 500 1.10 4.0 20 10 200 – – – – TO-92d

■ Not for new design

Semiconductor
Semiconductor Group
Group 36
2 1998-11-01
1998-11-01
Selection Guide

For complete information and data sheets please contact us on our internet homepage
http://www.siemens.de/semiconductor/products/35/35.htm

General Purpose and Switching Transistors


Type Maximum Characteristics (TA = 25 °C) Package
N = NPN Ratings
P = PNP
VCB0 IC Ptot fT ICB0 at VCB0 hFE at IC VCE VCEsat at IC IB
V mA mW MHz nA V mA V V mA mA
■ BC 327 P 50 800 625 200 ≤ 100 45 100 … 630* 100 1 ≤ 0.70 500 50.0 TO-92d
■ BC 328 P 30 800 625 200 ≤ 100 25 100 … 630* 100 1 ≤ 0.70 500 50.0 TO-92d
■ BC 337 N 50 800 625 170 ≤ 100 45 100 … 630* 100 1 ≤ 0.70 500 50.0 TO-92d
■ BC 338 N 30 800 625 170 ≤ 100 25 100 … 630* 100 1 ≤ 0.70 500 50.0 TO-92d
■ BC 368 N 25 1000 800 100 ≤ 100 25 85 … 375 500 1 ≤ 0.50 1000 100.0 TO-92d
■ BC 369 P 25 1000 800 100 ≤ 100 25 85 … 375 500 1 ≤ 0.50 1000 100.0 TO-92d
■ BC 635 N 45 1000 800 100 ≤ 100 30 40 … 250 150 2 ≤ 0.50 500 50.0 TO-92d
■ BC 636 P 45 1000 800 100 ≤ 100 30 40 … 250 150 2 ≤ 0.50 500 50.0 TO-92d
■ BC 637 N 60 1000 800 100 ≤ 100 30 40 … 160 150 2 ≤ 0.50 500 50.0 TO-92d
■ BC 638 P 60 1000 800 100 ≤ 100 30 40 … 160 150 2 ≤ 0.50 500 50.0 TO-92d
■ BC 639 N 100 1000 800 100 ≤ 100 30 40 … 160 150 2 ≤ 0.50 500 50.0 TO-92d
■ BC 640 P 100 1000 800 100 ≤ 100 30 40 … 160 150 2 ≤ 0.50 500 50.0 TO-92d
■ BCX 12 N 125 800 625 100 100 100 63 100 1 ≤ 1.00 500 50.0 TO-92d
■ BCX 13 P 125 800 625 120 100 100 63 100 1 ≤ 1.00 500 50.0 TO-92d
■ BCX 58 N 32 100 500 200 ≤ 20 32 120 … 630* 2 5 ≤ 0.50 100 2.50 TO-92d
■ BCX 59 N 45 100 500 200 ≤ 20 45 120 … 630* 2 5 ≤ 0.50 100 2.50 TO-92d
■ BCX 78 P 32 100 500 250 ≤ 20 32 120 … 630* 2 5 ≤ 0.60 100 2.50 TO-92d
■ BCX 79 P 45 100 500 250 ≤ 20 45 120 … 630* 2 5 ≤ 0.60 100 2.50 TO-92d

■ Not for new design


* Available in hFE subgroups.

Semiconductor
Semiconductor Group
Group 37
3 1998-11-01
1998-11-01

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