BU406, BU407

NPN Power Transistors

These devices are high voltage, high speed transistors for horizontal
deflection output stages of TV’s and CRT’s.

Features
• High Voltage www.onsemi.com
• Fast Switching Speed
• Low Saturation Voltage NPN SILICON
• These Devices are Pb−Free and are RoHS Compliant* POWER TRANSISTORS
7 AMPERES − 60 WATTS
MAXIMUM RATINGS
150 AND 200 VOLTS
Rating Symbol Value Unit
Collector−Emitter Voltage BU406 VCEO 200 Vdc
BU407 150 SCHEMATIC

Collector−Emitter Voltage BU406 VCEV 400 Vdc COLLECTOR

BU407 330 2,4

Collector−Base Voltage BU406 VCBO 400 Vdc

BU407 330
1
Emitter−Base Voltage VEBO 6 Vdc BASE
Collector Current − Continuous IC 7 Adc
− Peak Repetitive 10 3
EMITTER
Collector Current − Peak (10 ms) ICM 15 Adc
Base Current IB 4 Adc MARKING
Total Device Dissipation @ TC = 25_C PD 60 W DIAGRAM
Derate above 25°C 0.48 W/_C
Operating and Storage Junction TJ, Tstg −65 to 150 _C 4
Temperature Storage
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be TO−220 BU40xG
assumed, damage may occur and reliability may be affected. CASE 221A AY WW
STYLE 1

THERMAL CHARACTERISTICS 1
2
3 1
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 2.08 _C/W BU40x = Specific Device Code
x = 6 or 7
Thermal Resistance, Junction−to−Ambient RqJA 70 _C/W A = Assembly Location
Maximum Lead Temperature for Soldering TL 260 _C Y = Year
Purposes1/8″ from Case for 5 Seconds WW = Work Week
G = Pb−Free Package

ORDERING INFORMATION
Device Package Shipping

BU406G TO−220AB 50 Units / Rail

(Pb−Free)

BU407G TO−220AB 50 Units / Rail

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

November, 2014 − Rev. 11 BU406/D
 BU406, BU407

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1) BU406 VCEO(sus) 200 − − Vdc
(IC = 100 mAdc, IB = 0) BU407 150 − −

Collector Cutoff Current ICES mAdc

(VCE = Rated VCEV, VBE = 0) − − 5
(VCE = Rated VCEO + 50 Vdc, VBE = 0) − − 0.1
(VCE = Rated VCEO + 50 Vdc, VBE = 0, TC = 150_C) − − 1
Emitter Cutoff Current BU406, BU407 IEBO − − 1 mAdc
(VEB = 6 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)
Collector−Emitter Saturation Voltage VCE(sat) − − 1 Vdc
(IC = 5 Adc, IB = 0.5 Adc)

Base−Emitter Saturation Voltage VBE(sat) − − 1.2 Vdc

(IC = 5 Adc, IB = 0.5 Adc)

Forward Diode Voltage VEC − − 2 Volts

(IEC = 5 Adc) “D” only

DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT 10 − − MHz
(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 20 MHz)

Output Capacitance Cob − 80 − pF

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

SWITCHING CHARACTERISTICS
Inductive Load Crossover Time tc − − 0.75 ms
(VCC = 40 Vdc, IC = 5 Adc, IB1 = IB2 = 0.5 Adc, L = 150 mH)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 1%.

100 10

70 TJ = 100°C
IC, COLLECTOR CURRENT (AMP)

dc
hFE, DC CURRENT GAIN

25°C
50

1 BONDING WIRE LIMIT

30 VCE = 5 V THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.1
20

BU407
TC = 25°C
BU406
10
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 2 3 5 7 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain Figure 2. Maximum Rated Forward
Bias Safe Operating Area

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 BU406, BU407

PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AH

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T ALLOWED.
S
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
1 2 3 U D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.024 0.36 0.61
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
D Z --- 0.080 --- 2.04
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

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