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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The document provides specifications for the SavantIC Semiconductor 2SC4054 silicon NPN power transistor. It includes maximum ratings, thermal characteristics, electrical characteristics, switching times, and package outline dimensions. The 2SC4054 is a high voltage, high speed switching power transistor packaged in an ITO-220 case. Key parameters include a collector-emitter sustaining voltage of 450V, saturation voltages of 1V and 1.5V, and transition frequency of 20MHz.

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154 views5 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The document provides specifications for the SavantIC Semiconductor 2SC4054 silicon NPN power transistor. It includes maximum ratings, thermal characteristics, electrical characteristics, switching times, and package outline dimensions. The 2SC4054 is a high voltage, high speed switching power transistor packaged in an ITO-220 case. Key parameters include a collector-emitter sustaining voltage of 450V, saturation voltages of 1V and 1.5V, and transition frequency of 20MHz.

Uploaded by

angel bastidas
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4054

DESCRIPTION
·With ITO-220 package
·Switching power transistor
·High voltage ,high speed

PINNING

PIN DESCRIPTION

1 Base

2 Collector

Fig.1 simplified outline (ITO-220) and symbol


3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 600 V

VCEO Collector-emitter voltage Open base 450 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current 5 A

ICM Collector current-Peak 10 A

IB Base current 2 A

IBM Base current-Peak 4 A

PT Total power dissipation TC=25 30 W

Tj Junction temperature 150

Tstg Storage temperature -55~150

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-C Thermal resistance junction case 4.16 /W

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4054

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 450 V

VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.0 V

VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V

ICBO Collector cut-off current


At rated volatge 0.1 mA
ICEO Collector cut-off current

IEBO Emitter cut-off current At rated volatge 0.1 mA

hFE-1 DC current gain IC=2.5A ; VCE=5V 10

hFE-2 DC current gain IC=1mA ; VCE=5V 5

fT Transition frequency IC=0.5A ; VCE=10V 20 MHz

Switching times

ton Turn-on time 0.5 µs


IC=2.5A;IB1=0.5A
ts Storage time IB2=1A ,RL=60B 2.0 µs
VBB2=4V

tf Fall time 0.2 µs

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4054

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC4054

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This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.

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