LAB MANUAL

FOR
ELECTRONIC DEVICES AND CIRCUITS
LAB WITH SIMULATION

DEPARTMENT OF ELECTRONICS AND COMMUNICATION

ENGINEERING
SRKR ENGINEERING COLLEGE
BHIMAVARAM
 LIST OF EXPERIMENTS

HARDWARE:
1. Diode characteristics (PN Diode, LED, Zener Diode)
2. Half wave rectifier and full wave rectifier with and without filter.
3. Transistor as Switch and Transistor Biasing (Fixed bias & Self Bias)
4. Transistor characteristics in CE configuration.
5. CE Amplifier
6. JFET Characteristics.

SOFTWARE:
7. Diode characteristics (PN Diode, LED, Zener Diode)
8. Zener Regulation characteristics
9. Transistor characteristics in CB configuration.
10. CC Amplifier.
11. JFET Characteristics.
12. FET Amplifier.
 1. DIODE CHARACTERISTICS
a. Semiconductor Diode
AIM:

To obtain the V-I characteristics of BY127 and DR25 diodes.

APPARATUS:

Diodes - BY127 (si), DR25 (Ge)

Resistor - 100Ω

Ammeters - 0-50mA, 0-100µA

Voltmeters - 0-2V, 0-30V

Power Supply - 0-5V DC Variable supply

CIRCUIT DIAGRAM:

Forward Bias:

Reverse Bias:
PROCEDURE:

1. Construct the circuit as per the circuit diagram.

2. Vary the voltage source slowly and measure the corresponding diode currents.
3. Repeat the procedure for diode in reverse bias.
4. Plot the graph between diode voltage and diode current for forward and reverse bias
conditions.
5. Find the diode cut-in voltage, dynamic and static resistance from the graphs.

MODEL GRAPH:

OBSERVATIONS:

By127: DR25:

Forward Bias: Forward Bias: Reverse Bias:

V I V I V I
(volts) (mA) (volts) (mA) (volts) (µA)

Calculations from gragh:

Forward Bias for BY 127:

Diode Cut-in Voltage =
Dynamic resistance = ∆V/∆I =

Static resistance = V/I =

 Forward Bias for DR 25:
Diode Cut-in Voltage =
Dynamic resistance = ∆V/∆I =

Static resistance = V/I =

Reverse Bias for DR 25:

Dynamic resistance = ∆V/∆I =

Static resistance = V/I =

RESULTS:

Forward Bias for BY 127:

Diode Cut-in Voltage =
Dynamic resistance =
Static resistance =

Forward Bias for DR 25:

Diode Cut-in Voltage =
Dynamic resistance =
Static resistance =

Reverse Bias for DR 25:

Dynamic resistance =
Static resistance =
 b. Light Emitting Diode:
AIM:

To obtain the V-I characteristics of CQY24 Light emitting diode.

APPARATUS:

Diodes - CQY24 LED

Resistor - 68Ω

Ammeters - 0-50mA

Voltmeters - 0-5V

Power Supply - 0-5V DC Variable supply

CIRCUIT DIAGRAM:

PROCEDURE:

1. Construct the circuit as per the circuit diagram.

2. Vary the voltage source slowly and measure the corresponding diode currents.
3. Repeat the procedure for diode in reverse bias.
4. Plot the graph between diode voltage and diode current for forward and reverse bias
conditions.
5. Find the diode cut-in voltage, dynamic and static resistance from the graphs.
MODEL GRAPH:

OBSERVATIONS:

LED:

Forward Bias:
V I
(volts) (mA)

CALCULATIONS:

Forward Bias:
Diode Cut-in Voltage =
Dynamic resistance = ∆V/∆I =

Static resistance = V/I =

RESULTS:

Forward Bias:
Diode Cut-in Voltage =
Dynamic resistance = ∆V/∆I =
Static resistance = V/I =
c. ZENER Diode
AIM:

To obtain the V-I characteristics of BZX 5.1 Zener diode.

APPARATUS:

Diodes - BZX 5.1 Zener diode

Resistor - 100Ω, 200Ω

Ammeters - 0-50mA

Voltmeters - 0-2V, 0-10V

Power Supply - 0-5V, 0-15V DC Variable supply

CIRCUIT DIAGRAM:

Forward Bias:

Reverse Bias:

PROCEDURE:
 1. Construct the circuit as per the circuit diagram.
2. Vary the voltage source slowly and measure the corresponding diode currents.
3. Repeat the procedure for diode in reverse bias.
4. Plot the graph between diode voltage and diode current for forward and reverse bias
conditions.
5. Find the diode cut-in voltage, Zener breakdown voltage and Zener resistance from the
graphs.

MODEL GRAPH:

OBSERVATIONS:

BZX 5.1 Zener Diode:

Forward Bias: Reverse Bias:

V I V I
(volts) (mA) (volts) (µA)

CALCULATIONS:
 Forward Bias:
Diode Cut-in Voltage =
Dynamic resistance = ∆V/∆I =

Static resistance = V/I =

Reverse Bias:

Dynamic resistance = ∆V/∆I =

Static resistance = V/I =

RESULTS:

Forward Bias:
Diode Cut-in Voltage =
Dynamic resistance =
Static resistance =

Reverse Bias:

Dynamic resistance =
Static resistance =
 2. HALF-WAVE AND FULL-WAVE RECTIFIERS
AIM:

To find the regulation and ripple characteristics and to observe the input and output
waveforms of a Half-wave and Full-wave rectifiers with and without capacitor filter.

APPARATUS:

Transformer - 230V/9V

Diodes - BY 127

Capacitor - 470 µF/16V

Resistors - 100Ω, 300Ω, 1KΩ, 4.7KΩ, 8.2KΩ,10KΩ.

Digital Multi-meter

CRO

CIRCUIT DIAGRAMS:

Half-wave Rectifier:

XSC1

Ext Trig
+
_
A B
+ _ + _
9v D1
T1
1N4001 R1
230v:50hz C1 1kΩ 100 %
470µF Key=A

0V
Full-wave Rectifier:

XSC1

Ext Trig
+
_
A B
+ _ + _
D1
T1 9v
1N4001 R1
0v C1
230v:50hz 1kΩ 100 %
D2 470µF
Key=A

1N4001

PROCEDURE:

1. Construct the circuit without capacitor as per the circuit diagram.

2. Measure No load dc voltage.
3. Vary the load resistance and measure the ac and dc voltages at the output of the
rectifier.
4. Repeat steps 2 & 3 with capacitor.
5. Connect the oscilloscope and observe input and output waveforms with and
without capacitor for different loads and sketch.
6. Plot regulation curve (% regulation Vs load)
7. Repeat steps 1 to 6 for full-wave rectifier.

OBSERATIONS:

Half-wave rectifier without capacitor:

VNL=

S.N RL (Ω) Vac (V) Vdc (V) Ripple = Vac/Vdc % Regulation =

o {(VNL-VL)/VL} x 100

Half-wave rectifier with capacitor:

VNL=

S.N RL (Ω) Vac (V) Vdc (V) Ripple = Vac/Vdc % Regulation =

o {(VNL-VL)/VL} x 100
Full-wave rectifier without capacitor:

VNL=

S.N RL (Ω) Vac (V) Vdc (V) Ripple = Vac/Vdc % Regulation =

o {(VNL-VL)/VL} x 100

Full-wave rectifier with capacitor:

VNL=

S.N RL (Ω) Vac (V) Vdc (V) Ripple = Vac/Vdc % Regulation =

o {(VNL-VL)/VL} x 100

Model Graphs:
RESULT:

Half-wave rectifier without filter:

Ripple factor =

% Regulation =

Half-wave rectifier with filter:

Ripple factor =

% Regulation =

Full-wave rectifier without filter:

Ripple factor =

% Regulation =

Full-wave rectifier with filter:

Ripple factor =

% Regulation =

3. TRANSISTOR AS A SWITCH AND TRANSISTOR

BIASING
a. Transistor as a switch
AIM:

To verify the operation of transistor as a switch.

APPARATUS:

Transistor - CL 100

LED - CQY 24

Resistors - 4.7 KΩ

- 1 KΩ - 2No’s

DC Supply - 12V, 5V

Digital Multi-meter

CIRCUIT DIAGRAM:

PROCEDURE:

1. Construct the circuit as per the circuit diagram.

2. Measure the voltage across
i. Collector to Emitter
ii. Collector to Base
iii. Base to Emitter terminals
 3. Repeat step 2 by connecting 5V to input terminals.
4. Observe the LED for both 0V and 5V applied at the input terminals.

OBSERVATIONS:

Measure the following voltages:

With 0V at base: With 5V at base:
VBE = VBE =
VCE = VCE =
VLED = VLED =
VCB = VCB =

RESULT:

Observed the operation of a transistor as a switch.

b. Transistor as a switch
AIM:

i. To become familiar with transistor biasing.

ii. To calculate stability factor.
APPARATUS:

Transistor - CL 100

Resistors - 33 KΩ, 8.2 KΩ, 2.2 KΩ, 1 KΩ, 330 KΩ, 1 KΩ

DC Supply - 12V

Digital Multi-meter

CIRCUIT DIAGRAM:

Fixed Bias Circuit:

Self-Bias Circuit:
PROCEDURE:

Self-bias circuit:

1. Construct the circuit as per the circuit diagram.

2. Measure the voltage across
i. Collector to Emitter
ii. Emitter to Base
iii. Drop across RC (2.2KΩ)
iv. Drop across RE (1KΩ)
v. Drop across R1 (33KΩ)
vi. Drop across R2 (8.2KΩ)
3. Calculate the stability factor.

Fixed-bias circuit:

1. Construct the circuit as per the circuit diagram.

2. Measure the voltage across
i. Collector to Emitter
ii. Base to emitter
iii. Drop across 330KΩ
iv. Drop across 1KΩ.
3. Calculate the stability factor.

OBSERVATIONS:
Self-bias circuit:

VCE =

VBE =

Drop across RC (2.2KΩ) =

Drop across RE (1KΩ)=

Drop across R1 (33KΩ) =

Drop across R2 (8.2KΩ) =

IE= Drop across RE /RE =

I1= Drop across R1 /R1 =

I2= Drop across R2 /R2 =

IB= I1- I2 =

IC= Drop across RC /RC =

β = IC / IB =

Stability Factor, S = {(1+ β) (1+ RB / RE )}/(1+ β+ RB / RE)

Fixed-bias circuit:

VCE =

VBE =

Drop across 8.2KΩ =

Drop across 330KΩ =

IB= Drop across R1 /R1 =

IC= Drop across RC /RC =

β = IC / IB =

Stability Factor, S = (1+ β)

RESULTS:

1. Stability factor for self-bias circuit, S =

2. Stability factor for fixed-bias circuit, S =
4. TRANSISTOR CHARACTERISTICS IN CE
CONFIGURATION
AIM:
i. To obtain input and output characteristics of a transistor in CE configuration.
ii. To find Hybrid parameters (h-parameters).

APPARATUS:

Transistor - CL 100

Resistors - 47 KΩ

Power supply - 5V, 30V DC

Voltmeter - 0-2V, 0-30V

Ammeter - 0-100µA, 0-50mA

CIRCUIT DIAGRAM:

PROCEDURE:

1. Construct the circuit as per the circuit diagram.

Input Characteristics:

2. Make VCE zero and vary 0-5Vsupply in convenient steps and note the values of IB and
VBE .
3. Adjust the 0-30V supply so that VCE = 2V and fix it.
4. Vary the 5V supply in convenient steps and tabulate the values of IB and VBE .

Output Characteristics:
 5. Adjust 0-5V supply and fix the value of IB= 50µA .
6. Vary the 0-30V supply in convenient steps and tabulate the values of IC and VCE .
7. Repeat step 6 for IB= 60µA and IB= 80µA.
8. Plot the input and output characteristics curves.
9. Find the h-parameters from the graphs.

OBSERVATIONS:

Input characteristics:

VCE= 0V VCE= 2V

VBE (V) IB(µA) VBE (V) IB(µA)

hie =∆VBE/∆IB at VCE= constant

hre =∆VBE/∆VCE at IB = constant

Output characteristics:

IB= 60 µA IB =80 µA

VCE (V) IC(mA) VCE (V) IC(mA)

hfe =∆ IC /∆IB at VCE= constant

hoe =∆ IC/∆VCE at IB = constant

MODEL GRAPHS:

Input Characteristics Output Characteristics

RESULTS:

From input characteristics:

hie =

hre =

From output characteristics:

hfe =

hoe =
 5. COMMON EMMITER AMPLIFIER
AIM:

1. To measure voltage gain and current gain.

2. To obtain input resistance and output resistance of the given CE amplifier.

APPARATUS:

Transistor - CL100

Resistors - 33kΩ, 8.2kΩ,1kΩ ----- 1 no.

2.2kΩ ----- 2 no

Capacitors - 10 µF----- 3 no

Power supply - 12V dc

Signal generator, CRO.

CIRCUIT DIAGRAM:
VCC
12V

Rc
R3
2.2kΩ
33kΩ C3
10µF

R C1
CL100
2.2kΩ 10µF

OUTPUT
10mV p-p
R2 Re C2
1kΩ 10µF
8.2kΩ

PROCEDURE:

1. Construct the circuit as per the circuit diagram.

2. Apply 10 mV(p-p) , 1 kHz sine wave signal to the input of amplifier.
3. Measure output voltage (p-p) on CRO and calculate voltage gain.
4. Measure voltage drop across 2.2kΩ source resistor using CRO.
 5. Find input current, Input current = Drop across 2.2kΩ/2.2k and calculate input
resistance.
6. Connect 5kΩ potentiometer across amplifier output terminals and vary it till output
voltage becomes half of that obtain in step 3.
7. Disconnect potentiometer without disturbing it and measure its resistance value on a
ohm-meter. This will be the output resistance of the amplifier.
8. Connect a load resistance which is at least 4 times larger than output resistance and
find the output voltage.
9. Find output current, Output current = Output voltage when load resistor is
connected/load resistor.
10. Assuming the input current is not changing much, find current gain , Current gain =
Output current/Input current.

OBSERVATIONS :

Input voltage =

Output voltage =

Voltage gain = Output voltage/Input voltage.

Drop across 2.2kΩ =

Input Current = Drop across 2.2kΩ/2.2kΩ

Output current = Output Voltage when load resistor is connected/load resistor.

Current gain = Output current/Input current

Input resistance = Input voltage/Input current

Output resistance =

RESULT :

Voltage gain =

Current gain =

Input resistance =

Output resistance =
 6. FIELD EFFECT TRANSISTOR (FET)
CHARACTERISTICS
AIM:
i. To obtain the output characteristics of a FET connected in common source (CS)
configuration.
ii. To obtain transfer characteristics of FET.
iii. To find the parameters of FET.

APPARATUS:

Transistor - BFW 10

Voltmeter - 0-5V, 0-10V

Ammeter - 0-10mA

DC power supplies - 0-5V, 0-15V

CIRCUIT DIAGRAM:

PROCEDURE:

1. Construct the circuit as per the circuit diagram.

2. Keeping VGS constant vary VDS and measure ID.
3. Plot VDS Vs ID.
4. Repeat the above steps for different values of VGS. These are the output characteristics
of FET.
5. Keeping VDS fixed vary VGS and measure ID.
6. Plot VGS Vs ID. This is the transfer characteristic of FET.
OBSERVATIONS:

VGS = 0V VGS = -0.5V

ID(mA) VDS(V) ID(mA) VDS(V)

VDS= 5V

VGS (V) ID (mA)

MODEL GRAPH:

RESULT:

1. Pinch off voltage (Vp) =

2. VGS (off) =

3. IDSS =

4. gm =

5. rd =
 6. Verify the formula ID = IDSS[1-{ VGS / VGS (off) }]2.

7. DIODE CHARACTERISTICS USING MULTISIM

a. Semiconductor Diode
AIM:

To observe the V-I characteristics of Silicon and Germanium diodes.

APPARATUS:

Personal computer with multi-sim software

CIRCUIT DIAGRAM:

Forward Bias:

R1 D1

100Ω 1N4001

V1
5V

Reverse Bias:

D1

1N4001

V1
5V

PROCEDURE:

1. Double click on the Multisim Icon Present on the Screen.

2. Right click on the screen and then click on place component.
3. Select Required Components and place it on the workspace.
4. Double click on the components for changing its value.
 5. Connect the circuit as per the circuit diagram by using steps 2, 3, 4 and save the
circuit.
6. Go to DC Sweep which is present on the top of the screen, beside the RUN ►
symbol.
7. Now in Analysis parameters select the source and then give the remaining values.
8. Click on the Output present on the top for selecting the variables we required.
9. Select the variable and click on the "Add" button and then save and Run.
10. Now we will find Graph Screen, select Export to Excel symbol on the graph panel
tool bar and select the boxes, then Next and Next.
11. In the excel sheet, select the Voltage and Current columns and go to insert ==>
Scatter and select the graph modal you required.

MODEL GRAPH:

RESULT:

Observed the V-I characteristics of silicon and germanium semiconductor diodes using
multi-sim software.
b. Light Emitting Diode
AIM:

To observe the V-I characteristics of Light emitting diode.

APPARATUS:

Personal computer with multi-sim software

CIRCUIT DIAGRAM:

Forward Bias:

LED1
R1

68KΩ
V1
5V

PROCEDURE:

1. Double click on the Multisim Icon Present on the Screen.

2. Right click on the screen and then click on place component.
3. Select Required Components and place it on the workspace.
4. Double click on the components for changing its value.
5. Connect the circuit as per the circuit diagram by using steps 2, 3, 4 and save the
circuit.
6. Go to DC Sweep which is present on the top of the screen, beside the RUN ►
symbol.
7. Now in Analysis parameters select the source and then give the remaining values.
8. Click on the Output present on the top for selecting the variables we required.
9. Select the variable and click on the "Add" button and then save and Run.
10. Now we will find Graph Screen, select Export to Excel symbol on the graph panel
tool bar and select the boxes, then Next and Next.
11. In the excel sheet, select the Voltage and Current columns and go to insert ==>
Scatter and select the graph modal you required.
MODEL GRAPH:

RESULT:

Observed the V-I characteristics of Light emitting diode using multi-sim software.
c. ZENER Diode
AIM:

To observe the V-I characteristics of ZENER diode.

APPARATUS:

Personal computer with multi-sim software

CIRCUIT DIAGRAM:

Forward Bias:
R1 D1

100Ω BZX84-B5V1

V1
5V

Reverse Bias:

R1 D1

200Ω BZX84-B5V1

V1
5V

PROCEDURE:

1. Double click on the Multisim Icon Present on the Screen.

2. Right click on the screen and then click on place component.
3. Select Required Components and place it on the workspace.
4. Double click on the components for changing its value.
5. Connect the circuit as per the circuit diagram by using steps 2, 3, 4 and save the
circuit.
6. Go to DC Sweep which is present on the top of the screen, beside the RUN ►
symbol.
7. Now in Analysis parameters select the source and then give the remaining values.
 8. Click on the Output present on the top for selecting the variables we required.
9. Select the variable and click on the "Add" button and then save and Run.
10. Now we will find Graph Screen, select Export to Excel symbol on the graph panel
tool bar and select the boxes, then Next and Next.
11. In the excel sheet, select the Voltage and Current columns and go to insert ==>
Scatter and select the graph modal you required.

MODEL GRAPH:

RESULT:

Observed the V-I characteristics of ZENER diode using multi-sim software.

 8. ZENER REGULATION CHARACTERISTICS
AIM:

To obtain the voltage regulation of Zener diode when input voltage and load
resistances are changed.

APPARATUS:

Personal computer with multi-sim software

CIRCUIT DIAGRAM:

PROCEDURE:

1. Double click on the Multisim Icon Present on the Screen.

2. Right click on the screen and then click on place component.
3. Select Required Components and place it on the workspace.
4. Double click on the components for changing its value.
5. Connect the circuit as per the circuit diagram by using steps 2, 3, 4 and save the
circuit.
6. Click on Interactive simulation which is present on the top of the screen, beside the
RUN ► symbol.
7. Click on RUN ► symbol and note the corresponding readings on the meters.
8. Vary the load resistance and tabulate the corresponding currents and load voltage.
OBSERVATIONS:

VNL =

RL IT IZ IL= IT- IZ VL % Regulation =

{(VNL-VL)/VL} x 100

MODEL GRAPH:

RESULT:

Obtained the voltage regulation of Zener diode when input voltage and load resistances
are changed.
 9. TRANSISTOR CHARACTERISTICS IN COMMON BASE
CONFIGUATION
AIM:

To obtain the input and output characteristics of transistor in CB configuration.

APPARATUS:

Personal computer with multi-sim software.

CIRCUIT DIAGRAM:
Q1
U2 BC107BP U3
R1
A 0 A 0
- + - +
1kΩ
DC 1e-009Ohm DC 1e-009Ohm

V2
30V
V1
V
-

5V U1

+
U4

0
DC 10MOhm
DC 10MOhm
0
+

V
-

PROCEDURE:

1. Double click on the Multisim Icon Present on the Screen.

2. Right click on the screen and then click on place component.
3. Select Required Components and place it on the workspace.
4. Double click on the components for changing its value.
5. Connect the circuit as per the circuit diagram by using steps 2, 3, 4 and save the
circuit.
6. Go to DC Sweep which is present on the top of the screen, beside the RUN ►
symbol.
7. Now in Analysis parameters select the source and then give the remaining values.
8. Click on the Output present on the top for selecting the variables we required.
9. Select the variable and click on the "Add" button and then save and Run.
10. Now we will find Graph Screen, select Export to Excel symbol on the graph panel
tool bar and select the boxes, then Next and Next.
11. In the excel sheet, select the Voltage and Current columns and go to insert ==>
Scatter and select the graph modal you required.
MODEL GRAPH:

Input characteristics Output characteristics

RESULT:

Obtained the input and output characteristics of transistor in CB configuration.

 10. COMMON COLLECTOR AMPLIFIER
AIM:
i. To measure voltage gain and current gain.
ii. To obtain input resistance and output resistance of the given CC amplifier.

APPARATUS:

Personal computer with multi-sim software.

CIRCUIT DIAGRAM:

VCC
12V

R4
33kΩ XSC1

Ext Trig
+

R3 C2 Q1 _
A B
BC107BP + _ + _
2.2kΩ 10u/16v C1
V1
50mVpk
1kHz R1 10u/16v
R2
0° 1kΩ
8.2kΩ

PROCEDURE:

1. Double click on the Multisim Icon Present on the Screen.

2. Right click on the screen and then click on place component.
3. Select Required Components and place it on the workspace.
4. Double click on the components for changing its value.
5. Connect the circuit as per the circuit diagram by using steps 2, 3, 4 and save the
circuit.
6. Observe the input and output waveforms in the oscilloscope.
7. Calculate the gain of the amplifier using waveforms.
OBSERVATIONS:

Input voltage =

Output voltage =

Voltage gain = Output voltage/ Input voltage

Drop across 2.2 KΩ = input voltage – voltage after 2.2 KΩ

Input current = Drop across 2.2 KΩ/2.2 KΩ

Input resistance = Input voltage/ Input current

Output resistance =

Load resistance = 4 x Output resistance

Output current = Output voltage when load resistance is connected / 100Ω

Current gain = Output current/ Input current

RESULT:

Voltage gain =

Current gain =

Input resistance =

Output resistance =
 11. JFET CHARACTERISTICS
AIM:

i. To obtain the output characteristic of a FET connected in Common Source (CS)

configuration

ii. To obtain transfer characteristic of FET.

iii. To find the parameters of FET.

APPARATUS:

Personal Computer with Multisim software.

CIRCUIT DIAGRAM:
U2
+ -
0.000 A

DC 1e-009Ohm

Q1
BFW10

V4
+

U1
0.000

15V
V
-

U3 DC 10MOhm
DC 10MOhm
V3
0.000

5V
V
-
+

PROCEDURE:

1. Double click on the Multisim Icon Present on the Screen.

2. Right click on the screen and then click on place component.
3. Select Required Components and place it on the workspace.
4. Double click on the components for changing its value.
5. Connect the circuit as per the circuit diagram by using steps 2, 3, 4 and save the
circuit.
6. Go to DC Sweep which is present on the top of the screen, beside the RUN ►
symbol.
7. Now in Analysis parameters select the source and then give the remaining values.
8. Click on the Output present on the top for selecting the variables we required.
9. Select the variable and click on the "Add" button and then save and Run.
10. Now we will find Graph Screen, select Export to Excel symbol on the graph panel
tool bar and select the boxes, then Next and Next.
11. In the excel sheet, select the Voltage and Current columns and go to insert ==>
Scatter and select the graph modal you required.
MODEL GRAPH:

RESULT:

Obtained the output and transfer characteristics of FET connected in Common Source (CS)
configuration.
 12. JFET AMPLIFIER
AIM:

i. To familiarize with JFET amplifier.

ii. To obtain voltage gain of JFET amplifier.

iii. To obtain frequency response of JFET amplifier.

APPARATUS:

Personal Computer with Multisim software.

CIRCUIT DIAGRAM:

VCC
5.0V
R2
XSC1
2.2KΩ

C3 Ext Trig
+
_
Q1 A B

C2 10u/16v + _ + _
BFW10

10u/16v

V1
50mVpk R6
1kHz R1
1kΩ
0° 47kΩ C1
10u/16v

PROCEDURE:

1. Double click on the Multisim Icon Present on the Screen.

2. Right click on the screen and then click on place component.
3. Select Required Components and place it on the workspace.
4. Double click on the components for changing its value.
5. Connect the circuit as per the circuit diagram by using steps 2, 3, 4 and save the
circuit.
6. Go to AC Sweep and in Frequency Parameter Enter the start and stop Frequencies.
7. Click on the Output present on the top for selecting the variables we required.
 8. Select the variable and click on the "Add" button and then save and Run.
9. Now we will find Graph Screen, select Export to Excel symbol on the graph panel
tool bar and select the boxes, then Next and Next. In the excel sheet, select the
Voltage and Current columns and go to insert ==> Scatter and select the graph modal
you required.

MODEL GRAPH:

RESULT:

Obtained the voltage gain and frequency response of the JFET amplifier.