UNIT IX

ELECTRONIC DEVICES

Numerical Problems Worksheet

Level -01
(Numerical direct formula Based)

Q.1 : What is relation between voltage gain and transconductor of a trimester amplifier?

Ans :- Voltage gain = Trans – Conductance X Output resistance.

Q. 2 : A transistor is being used as a common emitter amplifier. What is the value of phase difference, if any
,between the collector-emitter voltage and input signal?

Ans.: 1800 or πradian

Q.3. Write is the phase relationship between the output and input voltage in the common faze transmitter
amplifier?

Ans: Output voltage is in phase with the input signal voltage.

Q.4. Write the relation between current gains ∞ or β.

Ans : β = ∞ _
1-∞

Q.5. Calculate the Current gain β of a transistor, if the current gain ∞ = 0.98

Ans: β = ∞ _ = 0.98 49.

1-∞ 1+100

Q. 6 For a Transmitter the value of β is 100, what is the value of ∞ .

Ans ∞ = β___ = 100__ = 0.99

1+β 1+100

Q.7. When the voltage drop across a p.n. Junction is increased from 0.65 v to 0.70, the charge in the diode
current is 5 ma . What is the dynamic resistance of the diode ?

Ans. Here ,
∆V= 0.7 – 0.65 = 0.05 V

∆I = 5mA = 5 x 10 -3 A
Dynamic resistance of junction diode is
 rd = __∆V_ = _0.05__ = 10 Ω
-3
∆I 5 x 10
Q.8. p – n – p transistor circuit, the collector is 10 ma , If 90 % of the reach the Collector, find emitter and
base currents.

Ans: Here, I E = 10 m A

As 90 % of the holes reach the collector, so the collector current ,

I c = 90 % of I E = 90/100 IE

I E = 100/900 Ic = 100/90 x 10 = 11 m A.

Base Current, I B = I E – I c = 11-10 = 1 mA.

Q.9. A photodiode is fabricated fromasemi conductor with band gap of 2.8 e V . Can it detect a wave of 6000
nm? Justify.

Ans : Energy Corresponding to Wave length 6000 nm is

E = _hc__ = 6.6 x 10-34 x 3 x 108_ joule

π 6000 x 10-9

= 3.3 x 10-20 J

= 3.3 x 10-20 0.2eV

1.6 x 10-19
The photon energy ( E = 0.2 ev ) of given waveleanth is much less then band gap ( Eg. ) , hance it
caneotdetevt the given wavelength.

Q.10. The number of silicon atoms per m3 is 5 x 1022 atom per 33 of Anesenice and 5 x 1020 per m3 atoms of
Indian. Calculate the number of electrons and holes . Given that Ni = 1.5 X 1016 per m3 .In the material
N-type on P-Type?

Ans : Arnesic is n-type impurty and indium is P-type impurity Number of electron, ne = n0 – nA = 5 x 1022 – 5
x 1020= 4.95 x 1022m-3

We have, ni2 = nenh

Given, ni = 1.5 x 1016 m -3

Number of holes, nh= ni2_ = (1.5 x 1016)2

ne 4.95 x 1022

nh = 4.54 x 109m-3
asne>ne ; so the material is an n-type semiconductor.
 LEVEL –II
Moderate difficulty level

Q.1. When the voltage drop across a p-n junction diode is incrase from 0.65 v to 0.70 v , the change in the
diode current is 5mA. What is the dynamic resistance of the diode?

Ans : rd = _∆v_
∆I

= __0.70 – 0.65_
5x10-3

= __0.05__
5 x 10-3

= 10Ω.

Q.2. Diode used in figure has a constant voltage drop at 0.5 V at all current and a maximum power rating of
100mw. What should be the value of resistance R, coneected in series for maximum current.

Ans : Current , I = _P_

V

= 100 x 10-13_
0.5

=0.2 A
From Circuit ,

IR +0.5 = 1.5

i.e., 0.2 +0.5 = 1.5

i.e. R = 1.5 – 0.5 = 5Ω.

0.2
Q.9. On the figure shown, find out the current passing through RL andZener diode :

Ans : Here,
V2 = 5V
Voltage drop across R = Input voltage – V2

= 10 – 5 = 5v
 = IL = V2 5v 5 x 10-2A
Here,
Current through R,

I = Voltage drop across R = _5V_ 6.25 x 10-2 A

R 80Ω

Applying Kirchoff’sLaw :

I = I2 + I L

I2 = I - IL

= 6.25 x 10-2

= 1.25 x 10-2A.

Q.4. A common emitter transistor has current gain of 100. If emitter current is 8.08 m A, find the base and
collector current.
Ans: Here,
Β = 100

IE = 8.08 MA
Using, _IC_ = B
IB
We get
Ic= BIB = 100 IB
Using , IE =IB + IC
We get
IE = 101 IB
Or, IB = _IE_ = 8.08_ = 0.08mA
101 101
From Eqn (i) IC = 100 x 0.08 = 8ma.
Q 5. (I) Calculate the value of output voltage V0 and Current I if Silicon diode and germanium diode
conduct at 0.7 v and 0.3 v respectively ( refer figure)

(II) If now Germanium diode is coneected 12 v in reverse polarity , find new value of V0 and I.

Ans.: (I) Germanium diode conducts at 0.3 v only , so curret will prefer to pass through germanium diode so,
 V0 = 12 – 0.3 = 11.7 v

And,
I = 11.7___
5 x 103

= 2.34 mA

(II) When germanium diode is reversed biased, the current will flow through the silicon diode.

Then,
V0 = 12 – 0.7 = 11.3 v
And ,
I = _11.3_ 2.26 mA
5 x 103
Q.6 In a common –emitter transistor amplifier, the input resistance is 200Ω , RL = 20KΩ. Find (i) voltage
gain and (ii) Power gain .Goven current gain B = 10.

Ans: Here ,
Ri = 200Ω , RL = 20 kΩ
= 2 x 104 Ω

(i) Voltage gain, Av = β RL/RI

= 10 x 2 x 104 103 = 103

200

(ii) Power GainB2RL/Ri = (10)2 x 2 x 104

200

= 104
Q.7. A full wave rectifier is built with help of two diodes each having resistance is 1.2 10-3 Ω. A.C. input
signal has
(i) Maximum value of applied voltage
(ii) r.m.s. value of current
(iii) Current
(iv) Efficiency
(v) Ripple factor

Ans : (i) Vo = Io + (RL + RF )

= 1_ (6+1.2)103
24

= 300V

(ii) Irma = Io_ = 1___

√2 24 x √2

= 29.46 x 103A
 (i) Id.c = 2 _Io_
π

= 2 x 1__
24 x 3.14

= 2 x 1_ (* there are 2 diodes)

26.5 x 103

(ii) N = 82 RL _
Rf +RL

= 8.12 6.103__
(6+1.2)103

= 8.12_
1.2

= 67.7 %

½ ½
(iii) Ripple factor, 2 2
Irms__ -1 = _ 29.5_ -1 = 0.48
Iav 26.5
Q.8. For a common emitter amplifier , current gain = 50. If the emitter current is 6.6 mA, Calculate gain ,
when emitter is working as common-base amplifier.

Ans. Here
β = 50
IE = 6.6mA

Step 1. Since β = _IC__

IB

= Ic = β IB = 50IB

Step 2.Now ,
IE = Ic + I B

6.6 = 50IB + IB

IB = _6.6_ = 0.129 mA

Hence, Ic = 50 x _6.6__ = 6.47mA

51

Step 3. Β = _∞ ___ or, ∞ = ___β____

1- ∞ 1+β

= _50__ = 0.98
51

Q.9. For a transistor with β = 75 the maximum collector current for an emitter current of 5mA ?

Abs :- Here,
β = 75

IE = 5mA
Step 1 :-
Using
β = _∞___ we get,
1- ∞

75 = __∞__ or, 75 – 75 ∞ = ∞
1-∞

Or, 76∞ = 75 or, ∞ = 75 x 5

76
Step 2.,
∞ = Ic Ic = ∞IE = 75 x 5 = 4.93mA.
76
Q.10. In n p n transistor circuit, the collector current is 10 mA. If 95%of the electron emitted reach the
collector, what is the base current ?

Ans : Step 1 :-
Ic = 95 %

IE = 0.95IE

IE = Ic___
___
0.95

= __10__ ( Ic = 10 mA)
0.95

= 10.53 mA

Step 2 :-
Now , IE = IC + IB

IB = IE + IC

= 10.53 – 10

0.53mA