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2SD234 NPN Power Transistor Specs

This document provides the product specification for the SavantIC Semiconductor 2SD234 silicon NPN power transistor. It includes: 1) Descriptions of the TO-220 package and intended applications for low frequency power amplification and switching. 2) Pin descriptions and absolute maximum ratings including voltages, currents, and temperatures. 3) Typical characteristics including breakdown voltages, saturation voltages, cut-off currents, gain, and transition frequency. 4) Package outline dimensions for the TO-220 package.

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63 views3 pages

2SD234 NPN Power Transistor Specs

This document provides the product specification for the SavantIC Semiconductor 2SD234 silicon NPN power transistor. It includes: 1) Descriptions of the TO-220 package and intended applications for low frequency power amplification and switching. 2) Pin descriptions and absolute maximum ratings including voltages, currents, and temperatures. 3) Typical characteristics including breakdown voltages, saturation voltages, cut-off currents, gain, and transition frequency. 4) Package outline dimensions for the TO-220 package.

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Vitorio Logo
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD234

DESCRIPTION
·With TO-220 package
·Complement to type 2SB434

APPLICATIONS
·For low frequency power amplifier
and switching applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base

3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 60 V

VCEO Collector-emitter voltage Open base 50 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 3 A

1.5
PC Collector power dissipation W
TC=25 25

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD234

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ,IB=0 50 V

V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 60 V

V(BR)EBO Emitter-base breakdown voltage IE=1mA ,IC=0 6 V

VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.2 V

VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V

ICBO Collector cut-off current VCB=40V; IE=0 10 µA

IEBO Emitter cut-off current VEB=4V; IC=0 10 µA

hFE DC current gain IC=0.5A ; VCE=1V 40 240

COB Output capacitance IE=0 ; VCB=10V,f=1MHz 90 pF

fT Transition frequency IC=0.5A ; VCE=10V 3 MHz

hFE Classifications

R O Y

40-80 70-140 120-240

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD234

PACKAGE OUTLINE

Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)

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