2N6667, 2N6668

Darlington Silicon
Power Transistors
Designed for general−purpose amplifier and low speed switching
applications.
• High DC Current Gain − http://onsemi.com
hFE = 3500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 200 mAdc
VCEO(sus) = 60 Vdc (Min) − 2N6667 PNP SILICON
= 80 Vdc (Min) − 2N6668 DARLINGTON
• Low Collector−Emitter Saturation Voltage − POWER TRANSISTORS
VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc
10 A, 60−80 V, 65 W
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• TO−220AB Compact Package
• Complementary to 2N6387, 2N6388 MARKING
DIAGRAM
• Pb−Free Packages are Available* 4

STYLE 1:
PIN 1. BASE
2N666x
COLLECTOR 2. COLLECTOR AYWWG
1 3. EMITTER
2 4. COLLECTOR
3

CASE 221A−09
BASE TO−220AB

x = 7 or 8
≈8k ≈ 120 A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
EMITTER

Figure 1. Darlington Schematic

ORDERING INFORMATION

Device Package Shipping

2N6667 TO−220AB 50 Units/Rail

2N6667G TO−220AB 50 Units/Rail

(Pb−Free)

2N6668 TO−220AB 50 Units/Rail

2N6668G TO−220AB 50 Units/Rail

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2005 1 Publication Order Number:

June, 2005 − Rev. 5 2N6667/D
 2N6667, 2N6668

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS (Note 1)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Rating Symbol 2N6667 2N6668 Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
Collector−Emitter Voltage

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Collector−Base Voltage ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
VCEO
VCB
60
60
80
80
Vdc
Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Emitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎ VEB 5.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current − Continuous IC 10 Adc

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ
− Peak 15

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current IB 250 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25_C PD 65 W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Derate above 25_C 0.52 W/_C

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TA = 25_C PD 2.0 W
Derate above 25_C 0.016 W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ Characteristic Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case

ÎÎÎ
Thermal Resistance, Junction to Ambient
RqJC
RqJA
1.92
62.5
_C/W
_C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ELECTRICAL CHARACTERISTICS (Note 1) (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎ
Collector−Emitter Sustaining Voltage (Note 2) 2N6667 VCEO(sus) 60 − Vdc
(IC = 200 mAdc, IB = 0) 2N6668 80 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎ
Collector Cutoff Current (VCE = 60 Vdc, IB = 0) 2N6667 ICEO − 1.0 mAdc

ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
(VCE = 80 Vdc, IB = 0) 2N6668 − 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc) 2N6667 ICEX − 300 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc) 2N6668 − 300

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎ
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N6667 − 3.0 mAdc
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N6668 − 3.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 5.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 1)
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc) hFE 1000 20000 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
(IC = 10 Adc, VCE = 3.0 Vdc) 100 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
Collector−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc) VCE(sat) − 2.0 Vdc
(IC = 10 Adc, IB = 0.1 Adc) − 3.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Base−Emitter Saturation Voltage(IC = 5.0 Adc, IB = 0.01 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
(IC = 10 Adc, IB = 0.1 Adc)
VBE(sat) −
−
2.8
4.5
Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Current Gain − Bandwidth Product (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) |hfe| 20 − −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − 200 pF
Small−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 1000 − −
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

http://onsemi.com
2
 2N6667, 2N6668

VCC
− 30 V

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS RC

D1, MUST BE FAST RECOVERY TYPES e.g., SCOPE
1N5825 USED ABOVE IB [ 100 mA TUT
V2 RB
MSD6100 USED BELOW IB [ 100 mA
APPROX
FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 +8V
51 D1 [8k [ 120
tr, tf v 10 ns 0
DUTY CYCLE = 1.0% V1 + 4.0 V
APPROX
− 12 V 25 μs

Figure 2. Switching Times Test Circuit

TA TC
4 80 10
7 VCC = 30 V
5 IC/IB = 250
PD, POWER DISSIPATION (WATTS)

IB1 = IB2
3 60 3
tr TJ = 25°C
2

t, TIME (s)
TC

μ
ts
2 40 1
0.7
0.5
TA
1 20 0.3 .td
tf
0.2

0.1
0
0 20 40 60 80 100 120 140 160 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10
T, TEMPERATURE (°C) IC, COLLECTOR CURRENT (AMPS)

Figure 3. Power Derating Figure 4. Typical Switching Times

1
D = 0.5
TRANSIENT THERMAL RESISTANCE

0.5
r(t) NORMALIZED EFFECTIVE

0.3
0.2
0.2
0.1
0.1 P(pk)
ZθJC(t) = r(t) RθJC
0.05 RθJC = 1.92°C/W MAX
0.05
D CURVES APPLY FOR POWER
0.03 0.02 t1 PULSE TRAIN SHOWN
t2 READ TIME AT t1
0.02 0.01 SINGLE PULSE
TJ(pk) − TC = P(pk) RθJC(t)
DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
t, TIME (ms)

Figure 5. Thermal Response

http://onsemi.com
3
 2N6667, 2N6668

20
IC, COLLECTOR CURRENT (AMPS)
10 5 ms 100 μs There are two limitations on the power handling ability of
5
a transistor: average junction temperature and second
dc breakdown. Safe operating area curves indicate IC − VCE
3
2 1 ms limits of the transistor that must be observed for reliable
1 operation; i.e., the transistor must not be subjected to greater
0.5
dissipation than the curves indicate.
TJ = 150°C
0.3 2N6667 The data of Figure 6 is based on T J(pk) = 150_C; TC is
0.2 BONDING WIRE LIMIT 2N6668 variable depending on conditions. Second breakdown pulse
0.1 THERMAL LIMIT @ TC = 25°C limits are valid for duty cycles to 10% provided T J(pk)
SECOND BREAKDOWN LIMIT < 150_C. TJ(pk) may be calculated from the data in Figure 5.
0.05
CURVES APPLY BELOW RATED VCEO At high case temperatures, thermal limitations will reduce
0.03
0.02 the power that can be handled to values less than the
1 2 3 5 7 10 20 30 50 70 100
limitations imposed by second breakdown.
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. Maximum Safe Operating Area

10,000 300
5000
hFE , SMALL−SIGNAL CURENT GAIN

2000 TJ = 25°C

C, CAPACITANCE (pF)
1000 200

500
TC = 25°C
Cib Cob
200 VCE = 4 VOLTS
IC = 3 AMPS 100
100
70
50
50
20
10 30
1 2 3 5 7 10 20 30 50 70 100 200 300 500 1000 0.1 0.2 0.5 1 2 5 10 20 50 100
f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Typical Small−Signal Current Gain Figure 8. Typical Capacitance

VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

20,000 2.6
VCE = 3 V TJ = 25°C
10,000
TJ = 150°C 2.2
7000
hFE , DC CURRENT GAIN

IC = 2 A 4A 6A
5000
3000 1.8
2000
TJ = 25°C
1.4
1000
700
500 1
TJ = − 55°C
300
200 0.6
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.3 0.5 0.7 1 2 3 5 7 10 20 30
IC, COLLECTOR CURRENT (AMPS) IB, BASE CURRENT (mA)
Figure 9. Typical DC Current Gain Figure 10. Typical Collector Saturation Region

http://onsemi.com
4
 2N6667, 2N6668

3 +5

θV, TEMPERATURE COEFFICIENTS (mV/°C)

+4 hFE@VCE + 3.0V
TJ = 25°C *IC/IB ≤
2.5 +3 3
V, VOLTAGE (VOLTS)

+2 25°C to 150°C

2 +1
−55 °C to 25°C
0
VBE(sat) @ IC/IB = 250
1.5 −1
∗θVC for VCE(sat)
−2
VBE @ VCE = 3 V 25°C to 150°C
1 −3
θVB for VBE
−4 −55 °C to 25°C
VCE(sat) @ IC/IB = 250
0.5 −5
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP)

Figure 11. Typical “On” Voltages Figure 12. Typical Temperature Coefficients

105
REVERSE FORWARD
104
IC, COLLECTOR CURRENT (A)
μ

103 VCE = 30 V

102
TJ = 150°C
101
100°C
100
25°C
10− 1
+0.6 +0.4 +0.2 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4
VBE, BASE−EMITTER VOLTAGE (VOLTS)

Figure 13. Typical Collector Cut−Off Region

http://onsemi.com
5
 2N6667, 2N6668

PACKAGE DIMENSIONS

TO−220AB
CASE 221A−09
ISSUE AA

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
−T− PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
Q A
A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D STYLE 1: U 0.000 0.050 0.00 1.27
PIN 1. BASE
N V 0.045 −−− 1.15 −−−
2. COLLECTOR
Z −−− 0.080 −−− 2.04
3. EMITTER
4. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: http://onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Order Literature: http://www.onsemi.com/litorder
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your
Email: [email protected] Phone: 81−3−5773−3850 local Sales Representative.

http://onsemi.com 2N6667/D
6