2SC3890

Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SC3890 Unit Symbol Conditions 2SC3890 Unit 4.2±0.2
10.1±0.2

4.0±0.2
VCBO 500 ICBO VCB=500V 100max µA 2.8 c0.5
V
VCEO 400 V IEBO VEB=10V 100max µA

8.4±0.2
16.9±0.3
VEBO 10 V V(BR)CEO IC=25mA 400min V
ø3.3±0.2
IC 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 a

0.8±0.2
b
IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max V
PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V

±0.2
3.9
13.0min
Tj 150 °C fT VCE=12V, IE=–0.5A 10typ MHz 1.35±0.15

Tstg –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF 1.35±0.15

0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
B C E
200 66 3 10 –5 0.3 –0.6 1max 3max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V CE(s a t) (V )

7 7
A
600m
mA

Base-Emitter Saturation Voltage V B E (s a t) (V )

800

6 6
I B=

V B E (sat)
40 0m A

Collector Current I C (A)

Collector Current I C (A)

1
300 mA e Temp)
–55˚C (Cas
4 mp) 4
e Te
200 mA 25˚C (Cas

p)
Tem

)
mp)
emp
)
Temp
(Case
125˚C
p)

e Te
se

se T
2 5 Tem

(Ca
100mA

(Cas
(Ca
2 2

˚C
e
˚C
as

125

25˚C

–55˚C
(C

5 ˚C
12 C
5˚
V C E (sat) –5

0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 7 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =4V)
70 7 5
t o n• t s t g • t f (µ s)

5
50
DC Cur rent Gain h FE

Transient Thermal Resistance

t s tg
V C C 200V
Typ I C :I B1 :I B 2 =10:1:–2
1
Switching T im e

1
0.5
t on

0.5
10 tf
7 0.1 0.3
0.02 0.05 0.1 0.5 1 5 7 0.2 0.5 1 5 7 1 10 100 1000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
20 20 30

10 10 10
M aximu m Power D issi pation P C (W)

0µ
s
5 5
W
ith
Co lle ctor Cu rre nt I C (A)

Collector Curre nt I C (A)

20
In
fin
ite
he
at
si

1 1
nk

Without Heatsink
Without Heatsink 10
Natural Cooling
0.5 Natural Cooling 0.5
L=3mH
–IB2=1A
Duty:less than 1%

Without Heatsink
2
0.1 0.1 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

81