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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides product specifications for SavantIC Semiconductor's silicon NPN power transistors models 2N6383, 2N6384, and 2N6385. The transistors are in TO-3 packages and are Darlington transistors intended for low to medium frequency power applications such as power switching, audio amplification, and voltage regulation. Key specifications include absolute maximum ratings for voltage and current, thermal characteristics, electrical characteristics like saturation voltage and current gain, and package outline dimensions.

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38 views3 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides product specifications for SavantIC Semiconductor's silicon NPN power transistors models 2N6383, 2N6384, and 2N6385. The transistors are in TO-3 packages and are Darlington transistors intended for low to medium frequency power applications such as power switching, audio amplification, and voltage regulation. Key specifications include absolute maximum ratings for voltage and current, thermal characteristics, electrical characteristics like saturation voltage and current gain, and package outline dimensions.

Uploaded by

wds657
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2N6383 2N6384 2N6385

DESCRIPTION
·With TO-3 package
·Complement to type 2N6648/6649/6650
·DARLINGTON
·High DC current gain

APPLICATIONS
·Designed for low and medium frequency
power application such as power switching
audio amplifer ,hammer drivers and shunt
and series regulators

PINNING

PIN DESCRIPTION

1 Base

2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector

Absolute maximum ratings(Ta= )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

2N6383 40
VCBO Collector-base voltage 2N6384 Open emitter 60 V

2N6385 80
2N6383 40
VCEO Collector-emitter voltage 2N6384 Open base 60 V

2N6385 80
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 10 A
ICM Collector current-peak 15 A
IB Base current 0.25 A
PD Total Power Dissipation TC=25 100 W
Tj Junction temperature 200
Tstg Storage temperature -65~200

THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT

Rth j-c Thermal resistance junction to case 1.75 /W


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2N6383 2N6384 2N6385

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

2N6383 40

Collector-emitter
VCEO(SUS) 2N6384 IC=0.2A ;IB=0 60 V
sustaining voltage

2N6385 80

VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=10mA 2.0 V

VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=100mA 3.0 V

VBE-1 Base-emitter on voltage IC=5A ; VCE=3V 2.8 V

VBE-2 Base-emitter on voltage IC=10A ; VCE=3V 4.5 V

2N6383 VCE=40V; IB=0

ICEO Collector cut-off current 2N6384 VCE=60V; IB=0 1.0 mA

2N6385 VCE=80V; IB=0

VCE=40V; VBE=-1.5V 0.3


2N6383
TC=125 3.0
VCE=60V; VBE=-1.5V 0.3
ICEX Collector cut-off current 2N6384 mA
TC=125 3.0
VCE=80V; VBE=-1.5V 0.3
2N6385
TC=125 3.0

IEBO Emitter cut-off current VEB=5V; IC=0 10 mA

hFE-1 DC current gain IC=5A ; VCE=3V 1000 20000

hFE-2 DC current gain IC=10A ; VCE=3V 100

COB Output capacitance IE=0; VCB=10V;f=1MHz 200 pF

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2N6383 2N6384 2N6385

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.10mm)

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