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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The 2SD5702 is a silicon NPN power transistor in a TO-3P(H)IS package. It is designed for high voltage, high speed applications such as color display horizontal deflection output. It has a built-in damper diode and can handle currents up to 6A continuously and 16A peak with a power dissipation of 60W at a case temperature of 25°C. Key electrical characteristics include a saturation voltage below 5V at 4A collector current and a transition frequency of 3MHz.

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258 views3 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The 2SD5702 is a silicon NPN power transistor in a TO-3P(H)IS package. It is designed for high voltage, high speed applications such as color display horizontal deflection output. It has a built-in damper diode and can handle currents up to 6A continuously and 16A peak with a power dissipation of 60W at a case temperature of 25°C. Key electrical characteristics include a saturation voltage below 5V at 4A collector current and a transition frequency of 3MHz.

Uploaded by

Ssr Sha
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD5702

DESCRIPTION
·With TO-3P(H)IS package
·Built-in damper diode
·High voltage ,high speed

APPLICATIONS
·For color display horizontal deflection
output applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-3P(H)IS) and symbol
3 Emitter

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 800 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 6 A

ICM Collector current-peak 16 A

PC Collector power dissipation TC=25 60 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD5702

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 2.0 5.0 V

VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V

ICBO Collector cut-off current VCB=800V; IE=0 10 µA

IEBO Emitter cut-off current VEB=4V; IC=0 40 200 mA

hFE-1 DC current gain IC=1A ; VCE=5V 10 30

hFE-2 DC current gain IC=3A ; VCE=5V 5 15

fT Transition frequency IC=1A ; VCE=10V 3 MHz

VF Diode forward voltage IF=6A 2.0 V

IC=4A ;IB1=0.8A;IB2=-1.6A
tf Fall time 0.4 µs
VCC=200V; RL=50@

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD5702

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

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