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Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

The document provides product specifications for the SavantIC Semiconductor 2SB688 silicon PNP power transistor. The transistor is in a TO-3P(I) package and is intended for power amplifier applications requiring 45-50W of audio frequency power. Key specifications include an absolute maximum collector-emitter voltage of -120V, a collector current rating of -8A, and typical DC current gain values between 55-160. Dimensional drawings of the TO-3P(I) package and mounting details are also included.

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137 views4 pages

Silicon PNP Power Transistors: Savantic Semiconductor Product Specification

The document provides product specifications for the SavantIC Semiconductor 2SB688 silicon PNP power transistor. The transistor is in a TO-3P(I) package and is intended for power amplifier applications requiring 45-50W of audio frequency power. Key specifications include an absolute maximum collector-emitter voltage of -120V, a collector current rating of -8A, and typical DC current gain values between 55-160. Dimensional drawings of the TO-3P(I) package and mounting details are also included.

Uploaded by

criman45
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB688

DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SD718

APPLICATIONS
·Power amplifier applications
·Recommend for 45~50W audio frequency
amplifier output stage

PINNING

PIN DESCRIPTION

1 Emitter

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
3 Base

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -120 V

VCEO Collector-emitter voltage Open base -120 V

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -8 A

IB Base current -0.8 A

PT Total power dissipation TC=25 80 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB688

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0 -120 V

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.5 V

VBE Base-emitter voltage IC=-5A ; VCE=-5V -1.5 V

ICBO Collector cut-off current VCB=-120V; IE=0 -10 µA

IEBO Emitter cut-off current VEB=-5V; IC=0 -10 µA

hFE DC current gain IC=-1A ; VCE=-5V 55 160

fT Transition frequency IC=-1A ; VCE=-5V 10 MHz

Cob Output capacitance IE=0 ; VCB=-10V ;f=1MHz 280 pF

hFE Classifications
R O

55-110 80-160

2
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB688

PACKAGE OUTLINE

Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)

3
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SB688

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