2SK4107

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)

2SK4107
○ Switching Regulator Applications Unit: mm

• Low drain−source ON resistance : RDS (ON) = 0. 33 Ω (typ.)

• High forward transfer admittance : |Yfs| = 8.5 S (typ.)
• Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Drain−source voltage VDSS 500 V

Drain−gate voltage (RGS = 20 kΩ) VDGR 500 V
Gate−source voltage VGSS ±30 V
DC (Note 1) ID 15 A
Drain current
Pulse (Note 1) IDP 60 A 1. GATE
Drain power dissipation (Tc = 25°C) PD 150 W 2. DRAIN (HEAT SINK)
3. SOURCE
Single-pulse avalanche energy
EAS 765 mJ
(Note 2)
Avalanche current IAR 15 A JEDEC ―

Repetitive avalanche energy (Note 3) EAR 15 mJ JEITA ―

Channel temperature Tch 150 °C TOSHIBA 2-16C1B
Storage temperature range Tstg −55~150 °C Weight: 4.6 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic Symbol Max Unit

Thermal resistance, channel to case Rth (ch−c) 0.833 °C/W

Thermal resistance, channel to
Rth (ch−a) 50 °C/W
ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.78 mH, RG = 25 Ω, IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.

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Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±25 V, VDS = 0 V — — ±10 μA

Gate−source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 — — V
Drain cutoff current IDSS VDS = 500 V, VGS = 0 V — — 100 μA
Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 — — V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 — 4.0 V
Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 7.0 A — 0.33 0.4 Ω
Forward transfer admittance |Yfs| VDS = 10 V, ID = 7.0 A 4.0 8.5 — S
Input capacitance Ciss — 2450 —
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz — 15 — pF

Output capacitance Coss — 220 —

Rise time tr — 50 —

Turn-on time ton — 90 —

Switching time ns
Fall time tf — 45 —

Turn-off time toff — 175 —

Total gate charge (gate−source

Qg — 48 —
plus gate−drain)
VDD ≈ 400 V, VGS = 10 V, ID = 15 A nC
Gate−source charge Qgs — 26 —
Gate−drain (“Miller”) charge Qgd — 22 —

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

IDR — — — 15 A
(Note 1)
Pulse drain reverse current
IDRP — — — 60 A
(Note 1)
Forward voltage (diode) VDSF IDR = 15 A, VGS = 0 V — — −1.7 V
Reverse recovery time trr IDR = 15 A, VGS = 0 V — 1050 — ns
Reverse recovery charge Qrr dIDR / dt = 100 A / μs — 13 — μC

Marking

TOSHIBA
K4107 Part No. (or abbreviation code)
Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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ID – VDS ID – VDS
10 20
Common source 10 8 6 10 Common source
Tc = 25°C Tc = 25°C
Pulse test Pulse test
8 16
(A)

(A)
ID

ID
6 12 6
Drain current

Drain current
5.25
5.75
4 8
5 5.5

4.75 5.25
2 4 5
4.5
4.75
VGS = 4 V 4.5
VGS = 4 V
0 0
0 1 2 3 4 5 0 10 20 30 40 50

Drain−source voltage VDS (V) Drain−source voltage VDS (V)

ID – VGS VDS – VGS

50 10
Common source Tc = −55°C Common source
VDS = 20 V Tc = 25°C
VDS (V)

Pulse test Pulse test

40 8
(A)

25
ID

30 6
Drain−source voltage

100 15
Drain current

20 4

10 2
ID = 4 A

0 0
0 2 4 6 8 10 0 4 8 12 16 20

Gate−source voltage VGS (V) Gate−source voltage VGS (V)

⎪Yfs⎪ − ID RDS (ON) − ID

100 1
(S)

Common source Common source

VDS = 20 V Tc = 25°C
⎪Yfs⎪

Pulse test Pulse test

Drain−source ON resistance

Tc = −55°C
Forward transfer admittance

RDS (ON) (Ω)

VGS = 10 V
25
10
15
100

1 0.1
1 10 100 0.1 1 10 100

Drain current ID (A) Drain current ID (A)

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RDS (ON) – Tc IDR − VDS

1.0 100
Common source Common source
VGS = 10 V Tc = 25°C

IDR (A)
Pulse test Pulse test
Drain−source ON resistance

0.8

10

Drain reverse current

RDS (ON) (Ω)

0.6
ID = 15 A

0.4
8 1 10
4
5
0.2
3
1
VGS = 0, −1 V
0 0.1
−80 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2
Drain−source voltage VDS (V)
Case temperature Tc (°C)

Capacitance – VDS Vth − Tc

10000 5
Vth (V)

Ciss
4
(pF)

1000
Gate threshold voltage

3
C
Capacitance

Coss

2
100

Common source
1
VGS = 0 V Common source
f = 1 MHz VDS = 10 V
Crss ID = 1 mA
Tc = 25°C
Pulse test
10 0
0.1 1 10 100 −80 −40 0 40 80 120 160

Drain−source voltage VDS (V) Case temperature Tc (°C)

PD − Tc
Dynamic input/output characteristics
200 500 20
Common source
ID = 15 A
VDS (V)

Tc = 25°C
VGS (V)
PD (W)

400 Pulse test

400 16
150 VDS

300 VDS = 100 V 12

Drain power dissipation

Drain−source voltage

400
Gate−source voltage

100
200 200
200 8

50 VGS
100 4
VDS = 100 V

0 0 0
0 40 80 120 160 200 0 20 40 60 80 100

Total gate charge Qg (nC)

Case temperature Tc (°C)

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SAFE OPERATING AREA EAS – Tch

1000 1000
EAS (mJ)

ID max (continuous)
100 800
100 μs *
Drain current ID (A)

ID max (pulse) *
1 ms *
10 600
DC OPERATION
Avalanche energy

Tc = 25°C

1 400

* Single pulse Ta = 25℃

0.1 Curves must be derated 200
linearly with increase in
temperature. VDSS max

0.01 0
1 10 100 1000 25 50 75 100 125 150

Drain-source voltage VDS (V) Channel temperature (initial) Tch (°C)

BVDSS
15 V
−15 V IAR

VDD VDS

Test circuit Waveform

RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 5.78 mH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠

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RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.

• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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